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IRF135S203 N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The IRF135S203 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 135V drain-to-source voltage with 129A continuous drain current at 25°C. This device is housed in a TO-263-3 (D2PAK) surface mount package and is designed for high-current switching applications requiring efficient power dissipation up to 441W. The part maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1).
Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances while maintaining compatible packaging and thermal characteristics. Alternative components may be required due to inventory availability, supply chain considerations, or design optimization for specific application requirements.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 135 | V |
| Continuous Drain Current (Id) @ 25°C | 129 | A |
| On-State Resistance (Rds On Max) @ 77A, 10V | 8.4 | mOhm |
| Gate Threshold Voltage (Vgs(th) Max) @ 250µA | 4 | V |
| Gate Charge (Qg Max) @ 10V | 270 | nC |
| Power Dissipation (Max) | 441 | W |
| Operating Temperature Range | -55 to 175 | °C |
| Package Type | TO-263-3 (D2PAK) | Surface Mount |
Substitute Part Grouping Explanation
Substitution eligibility for the IRF135S203 is determined by the following critical parameters:
Voltage Rating Compatibility: The substitute part must maintain a Vdss rating equal to or greater than 135V to ensure safe operation within the same voltage domain.
Current Handling Capacity: The continuous drain current (Id) must be equal to or exceed 129A at 25°C to support equivalent load switching without thermal derating.
On-State Resistance (Rds On): The maximum on-state resistance must not exceed the specified 8.4mOhm at the rated gate drive voltage (10V) to maintain comparable conduction losses and thermal performance.
Gate Charge (Qg): Gate charge characteristics influence switching speed and driver circuit requirements. Substitute parts with significantly different Qg values may require circuit re-evaluation.
Package Compatibility: The substitute must use the TO-263-3 (D2PAK) surface mount package to ensure mechanical and thermal interface compatibility with existing PCB layouts.
Thermal Rating: Power dissipation capability must support the application's thermal requirements without exceeding the specified maximum rating.
Compliance Status: All substitute parts must maintain Active product status and RoHS3 compliance to meet regulatory and supply chain requirements.
Parameter Comparison
| Parameter | IRF135S203 (Infineon) | FDB075N15A (onsemi) | Unit |
|---|---|---|---|
| Manufacturer | Infineon Technologies | onsemi | — |
| Drain-to-Source Voltage (Vdss) | 135 | 150 | V |
| Continuous Drain Current (Id) @ 25°C | 129 | 130 | A |
| On-State Resistance (Rds On Max) | 8.4 @ 77A, 10V | 7.5 @ 100A, 10V | mOhm |
| Gate Threshold Voltage (Vgs(th) Max) | 4 @ 250µA | 4 @ 250µA | V |
| Gate Charge (Qg Max) @ 10V | 270 | 100 | nC |
| Input Capacitance (Ciss Max) | 9700 @ 50V | 7350 @ 75V | pF |
| Power Dissipation (Max) | 441 | 333 | W |
| Operating Temperature Range | -55 to 175 | -55 to 175 | °C |
| Package Type | TO-263-3 (D2PAK) | TO-263 (D2PAK) | Surface Mount |
| Product Status | Active | Active | — |
| RoHS Compliance | ROHS3 Compliant | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | — |
Engineering Selection Recommendations
FDB075N15A as Substitute for IRF135S203:
The FDB075N15A from onsemi qualifies as a functional substitute based on the following engineering criteria:
Electrical Compatibility: The FDB075N15A exceeds the voltage rating requirement with 150V Vdss compared to the 135V specification, providing additional voltage margin. Continuous drain current of 130A matches the 129A requirement. Gate threshold voltage remains identical at 4V, ensuring compatible gate drive characteristics.
Thermal Performance Consideration: The FDB075N15A specifies 333W maximum power dissipation compared to 441W for the IRF135S203. Applications requiring the full 441W dissipation capability must verify that the substitute's thermal rating is adequate for the specific use case.
Switching Characteristics: The FDB075N15A exhibits significantly lower gate charge (100nC versus 270nC), resulting in faster switching transitions and reduced driver circuit stress. Input capacitance is also reduced (7350pF versus 9700pF), improving switching speed performance.
On-State Resistance: The FDB075N15A demonstrates superior on-state resistance performance at 7.5mOhm (measured at 100A, 10V) compared to 8.4mOhm for the IRF135S203, reducing conduction losses.
Package and Compliance: Both devices use compatible TO-263 (D2PAK) surface mount packages suitable for existing PCB layouts. Both maintain Active product status, RoHS3 compliance, and MSL 1 rating, meeting regulatory and supply chain requirements.
Substitution Validity: The FDB075N15A is electrically and mechanically compatible for applications where the 333W thermal rating is sufficient and the improved switching characteristics are acceptable or beneficial.
Frequently Asked Questions (FAQ)
Q: Can the FDB075N15A directly replace the IRF135S203 in my circuit?
A: The FDB075N15A is mechanically and electrically compatible for most applications. Both devices use the TO-263 (D2PAK) package and share identical gate threshold voltage specifications. However, verify that your application's power dissipation requirement does not exceed the FDB075N15A's 333W maximum rating. The IRF135S203 supports up to 441W.
Q: What is the significance of the different gate charge values (270nC vs. 100nC)?
A: Gate charge directly affects switching speed and driver circuit requirements. The FDB075N15A's lower gate charge (100nC) enables faster switching transitions and reduces the current demand on the gate driver. This may improve overall circuit efficiency but requires verification that the gate driver can accommodate the faster switching characteristics.
Q: Are the packages truly compatible?
A: Both devices use the TO-263 (D2PAK) surface mount package with 2 leads plus tab configuration. The pinout and thermal interface are compatible, allowing direct PCB layout substitution without modification.
Q: Does the higher voltage rating (150V vs. 135V) of the FDB075N15A create any issues?
A: No. A higher voltage rating provides additional safety margin and does not create compatibility issues. The device will operate safely at the 135V design voltage of the original circuit.
Q: What are the compliance and supply chain implications?
A: Both the IRF135S203 and FDB075N15A maintain Active product status, RoHS3 compliance, and unlimited moisture sensitivity (MSL 1). Both are suitable for production use without additional regulatory or handling considerations.
Q: How do the on-state resistance specifications compare?
A: The FDB075N15A exhibits lower on-state resistance (7.5mOhm at 100A) compared to the IRF135S203 (8.4mOhm at 77A). This represents improved conduction efficiency and reduced heat generation during normal operation.
Q: Should I be concerned about the lower power dissipation rating of the FDB075N15A?
A: The 333W rating of the FDB075N15A is lower than the 441W rating of the IRF135S203. Evaluate your application's actual power dissipation requirements. If your design operates below 333W, the substitute is suitable. If sustained operation above 333W is required, the IRF135S203 is the appropriate choice.
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