IRF1310NSTRR N-Channel 100V 42A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF1310NSTRR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 42A continuous drain current in Tape & Reel (TR) packaging. This device operates in the HEXFET® series and is classified as obsolete product status. Due to its obsolete classification, equivalent substitute parts with active product status are necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while accommodating packaging and compliance variations.

Key Parameters

Parameter	IRF1310NSTRR Value	Unit	Substitution Criticality
Drain-to-Source Voltage (Vdss)	100	V	Critical - Must Match
Continuous Drain Current (Id) @ 25°C	42	A (Tc)	Critical - Minimum Requirement
On-Resistance (Rds On) @ 22A, 10V	36	mOhm	Critical - Performance Indicator
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V	Important - Drive Compatibility
Gate Charge (Qg) @ 10V	110	nC	Important - Switching Performance
Power Dissipation (Max) @ Tc	160	W	Important - Thermal Rating
Operating Temperature Range	-55 to 175	°C (TJ)	Important - Environmental Compatibility
Package Type	D2PAK (TO-263-3)	Surface Mount	Critical - Physical Compatibility
RoHS Status	Non-compliant	-	Important - Regulatory Requirement

Substitute Part Grouping Explanation

Substitution logic for the IRF1310NSTRR is based on strict electrical and mechanical parameter alignment. All substitute parts must satisfy the following criteria:

Mandatory Matching Parameters:

Drain-to-Source Voltage (Vdss): 100V (exact match required)
Package Type: D2PAK / TO-263-3 surface mount configuration
Operating Temperature Range: -55°C to 175°C minimum
FET Type: N-Channel MOSFET technology

Performance-Based Parameters:

Continuous Drain Current (Id): Minimum 42A at Tc (substitute parts may exceed this rating)
On-Resistance (Rds On): Comparable or lower values acceptable (36mOhm reference)
Gate Threshold Voltage (Vgs(th)): Within ±1V of 4V nominal for drive circuit compatibility
Power Dissipation: Minimum 160W at Tc (higher ratings acceptable)

Compliance Considerations:

Product Status: Active status preferred for long-term availability
RoHS Compliance: ROHS3 compliant variants recommended for new designs
Moisture Sensitivity Level: MSL 1 (Unlimited) maintained across all substitutes

Substitute parts are grouped into two categories: parametric equivalents (identical electrical specifications with different packaging or compliance status) and functional equivalents (similar electrical performance with minor parameter variations acceptable within application tolerances).

Parameter Comparison

Parameter	IRF1310NSTRR	IRF1310NSTRLPBF	BUK9640-100A,118	FDB3682	HUF75631S3ST	STB30NF10T4
Manufacturer	Infineon	Infineon	Nexperia	onsemi	onsemi	STMicroelectronics
Vdss (V)	100	100	100	100	100	100
Id @ 25°C (A)	42 (Tc)	42 (Tc)	39 (Tc)	32 (Tc)	33 (Tc)	35 (Tc)
Rds On @ 10V (mOhm)	36 @ 22A	36 @ 22A	39 @ 25A	36 @ 32A	40 @ 33A	45 @ 15A
Vgs(th) @ 250µA (V)	4	4	2	4	4	4
Qg @ 10V (nC)	110	110	48	28	79	55
Ciss @ 25V (pF)	1900	1900	3072	1250	1220	1180
Power Dissipation @ Tc (W)	160	160	158	95	120	115
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	D2PAK (TR)	D2PAK (CT)	D2PAK (CT)	TO-263 (TR)	TO-263 (CT)	D2PAK (CT)
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute: IRF1310NSTRLPBF

The IRF1310NSTRLPBF is the direct parametric equivalent to the IRF1310NSTRR. This part maintains identical electrical specifications including 100V Vdss, 42A continuous drain current, 36mOhm on-resistance, and 160W power dissipation. The primary difference is packaging format (Cut Tape & Digi-Reel® versus Tape & Reel) and product status (Active versus Obsolete). The IRF1310NSTRLPBF carries ROHS3 compliance, making it suitable for new designs and production environments with regulatory requirements. Inventory availability is significantly higher (6371 pieces) compared to the original part (887 pieces).

Secondary Substitute: STB30NF10T4

The STB30NF10T4 from STMicroelectronics provides functional equivalence with 100V Vdss and 35A continuous drain current. On-resistance is 45mOhm at 15A and 10V, representing a 25% increase compared to the IRF1310NSTRR baseline. Power dissipation is rated at 115W (Tc), which is 28% lower than the original part. This device is suitable for applications where the 42A current rating is not fully utilized and thermal dissipation is not the limiting factor. The STB30NF10T4 is ROHS3 compliant with active product status and high inventory availability (16100 pieces).

Secondary Substitute: HUF75631S3ST

The HUF75631S3ST from onsemi offers 100V Vdss with 33A continuous drain current and 40mOhm on-resistance at 33A and 10V. Power dissipation is 120W (Tc). This device is appropriate for applications requiring lower current capacity than the original 42A specification. Gate charge is 79nC at 20V, providing moderate switching performance. ROHS3 compliance and active product status support long-term availability. Inventory level is 3650 pieces.

Tertiary Substitute: BUK9640-100A,118

The BUK9640-100A,118 from Nexperia USA Inc. maintains 100V Vdss with 39A continuous drain current and 39mOhm on-resistance at 25A and 10V. This device features lower gate charge (48nC at 5V) and reduced input capacitance (3072pF), indicating faster switching characteristics. Power dissipation is 158W (Tc), closely matching the original specification. The part carries AEC-Q101 automotive qualification and ROHS3 compliance. Inventory availability is 5577 pieces.

Tertiary Substitute: FDB3682

The FDB3682 from onsemi provides 100V Vdss with 32A continuous drain current (Tc) and 36mOhm on-resistance at 32A and 10V. This device features significantly lower gate charge (28nC at 10V) and reduced input capacitance (1250pF), enabling superior switching performance in high-frequency applications. Power dissipation is 95W (Tc), representing a 41% reduction from the original specification. This part is suitable for applications where current requirements do not exceed 32A and thermal management is less critical. ROHS3 compliance and active product status are maintained. Inventory is 15465 pieces.

Selection Criteria Summary:

Direct Replacement: IRF1310NSTRLPBF (identical electrical performance, active status, ROHS3 compliant)
Current-Limited Applications: STB30NF10T4, HUF75631S3ST, FDB3682 (33-35A range, lower thermal dissipation)
Automotive Applications: BUK9640-100A,118 (AEC-Q101 qualified, optimized switching characteristics)
High-Frequency Switching: FDB3682, BUK9640-100A,118 (lower gate charge and input capacitance)

All substitute parts maintain the mandatory D2PAK / TO-263-3 package configuration, -55°C to 175°C operating temperature range, and MSL 1 moisture sensitivity level.

Frequently Asked Questions (FAQ)

Q1: Can the IRF1310NSTRLPBF be used as a direct drop-in replacement for the IRF1310NSTRR?

A: Yes. The IRF1310NSTRLPBF is electrically identical to the IRF1310NSTRR with matching Vdss (100V), Id (42A), Rds On (36mOhm), and power dissipation (160W). The primary difference is packaging format (Cut Tape & Digi-Reel® versus Tape & Reel) and product status (Active versus Obsolete). Both parts use the same D2PAK / TO-263-3 surface mount package, ensuring PCB footprint compatibility. The IRF1310NSTRLPBF is ROHS3 compliant, making it preferable for new designs.

Q2: What is the significance of the 42A continuous drain current specification when evaluating substitutes?

A: The 42A rating represents the maximum continuous current the IRF1310NSTRR can safely conduct at the case temperature (Tc). Substitute parts with lower ratings (such as FDB3682 at 32A or HUF75631S3ST at 33A) are acceptable only if the application circuit does not require sustained current exceeding the substitute part's rating. For applications operating near or at the 42A limit, the IRF1310NSTRLPBF or BUK9640-100A,118 (39A) are more appropriate. Exceeding a part's continuous current rating results in thermal runaway and device failure.

Q3: How does on-resistance (Rds On) affect substitute part selection?

A: On-resistance directly determines power dissipation and heat generation in the MOSFET. The IRF1310NSTRR baseline is 36mOhm at 22A and 10V. Substitute parts with higher on-resistance (such as STB30NF10T4 at 45mOhm) generate proportionally more heat at the same current level. In applications with tight thermal budgets or high current density, lower on-resistance is preferable. Conversely, applications with moderate current requirements and adequate thermal management can tolerate higher on-resistance values. The relationship is: Power Loss = Id² × Rds On.

Q4: Why do some substitute parts have significantly lower gate charge (Qg) values?

A: Gate charge represents the total charge required to switch the MOSFET from off to on state. Lower gate charge (such as FDB3682 at 28nC versus IRF1310NSTRR at 110nC) enables faster switching transitions and reduces driver circuit power consumption. This is particularly beneficial in high-frequency switching applications (>100 kHz). However, lower gate charge does not indicate superior performance in all applications. Low-frequency or DC-biased circuits derive no benefit from reduced gate charge. Driver circuit compatibility must be verified independently.

Q5: What is the difference between Tape & Reel (TR) and Cut Tape (CT) packaging?

A: Tape & Reel (TR) packaging supplies components on continuous carrier tape wound on reels, suitable for high-volume automated assembly. Cut Tape (CT) & Digi-Reel® packaging provides the same components on shorter tape segments or alternative reel formats, typically used for lower-volume orders or mixed-component procurement. Both packaging formats contain identical components in the same D2PAK / TO-263-3 package. Packaging format does not affect electrical performance or PCB compatibility. Selection depends on procurement volume and assembly equipment compatibility.

Q6: Is ROHS3 compliance mandatory for substitute part selection?

A: ROHS3 compliance is mandatory for new designs destined for European Union markets or applications subject to RoHS Directive 2011/65/EU. The original IRF1310NSTRR is RoHS non-compliant, making it unsuitable for new designs in regulated markets. All recommended substitute parts (IRF1310NSTRLPBF, BUK9640-100A,118, FDB3682, HUF75631S3ST, STB30NF10T4) are ROHS3 compliant. For legacy system repairs or non-regulated applications, RoHS compliance is not a technical requirement but remains a best practice for supply chain consistency.

Q7: Can the BUK9640-100A,118 be used in non-automotive applications?

A: Yes. The BUK9640-100A,118 is AEC-Q101 qualified for automotive use, but this qualification does not restrict its use in non-automotive applications. AEC-Q101 qualification indicates enhanced reliability testing and stricter manufacturing controls, making it suitable for any application requiring high reliability. The electrical specifications (100V Vdss, 39A Id, 39mOhm Rds On) are appropriate for general industrial and consumer applications. Automotive qualification is a superset of standard reliability requirements, not a limitation.

Q8: What thermal considerations apply when substituting parts with lower power dissipation ratings?

A: Substitute parts with lower power dissipation ratings (such as FDB3682 at 95W versus IRF1310NSTRR at 160W) indicate reduced thermal capacity at the case temperature (Tc). These parts are suitable for applications where actual power dissipation remains below the substitute part's rating. Thermal design must account for: (1) actual circuit current and on-resistance to calculate power loss, (2) junction-to-case thermal resistance (Rθ(j-c)), (3) case-to-ambient thermal resistance (Rθ(c-a)) including heatsink design, and (4) maximum junction temperature (175°C). If calculated junction temperature exceeds 175°C, a substitute part with higher power dissipation rating is required.

Q9: Are there any drive voltage compatibility issues between the IRF1310NSTRR and substitute parts?

A: Gate threshold voltage (Vgs(th)) varies slightly among substitute parts. The IRF1310NSTRR specifies 4V at 250µA, while BUK9640-100A,118 specifies 2V at 1mA. These variations are within acceptable driver circuit tolerances for standard gate drive circuits (typically 5V to 15V logic levels). However, applications using marginal gate drive voltages (near 3.3V logic levels) must verify that substitute parts achieve full on-state conduction at the available drive voltage. Maximum gate voltage (Vgs Max) ranges from ±15V to ±20V across all parts, ensuring compatibility with standard gate driver circuits. No drive voltage modifications are required for standard applications.

Q10: How should I verify substitute part compatibility before production implementation?

A: Verification requires: (1) electrical parameter confirmation against application circuit requirements (Vdss, Id, Rds On, thermal dissipation), (2) PCB footprint validation (D2PAK / TO-263-3 package compatibility), (3) gate drive circuit testing with the substitute part to confirm proper switching behavior, (4) thermal simulation or bench testing under worst-case operating conditions, and (5) compliance verification (RoHS, REACH, ECCN status). Prototype testing is recommended before full production transition. All substitute parts listed maintain identical package dimensions and pin configurations, eliminating mechanical compatibility concerns.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message