IRF1104STRR N-Channel MOSFET 40V 100A Equivalent & Substitute Parts

Part Overview

The IRF1104STRR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage and 100A continuous drain current in a D2PAK surface mount package. This device belongs to the HEXFET® series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute parts must maintain compatibility with the D2PAK package format and support the electrical specifications required for the application.

Substiute Parts

IRF1104STRR
Infineon TechnologiesIn Stock: 1184IRF1104STRR Datasheet
IRF1104STRR
Current Part
AOB4184
Alpha & Omega Semiconductor Inc.In Stock: 22678AOB4184 Datasheet
AOB4184
MFR Recommended
STB140NF55T4
STMicroelectronicsIn Stock: 15448STB140NF55T4 Datasheet
STB140NF55T4
MFR Recommended
STB85NF55T4
STMicroelectronicsIn Stock: 29424STB85NF55T4 Datasheet
STB85NF55T4
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 40 V
Continuous Drain Current (Id) @ 25°C 100 A (Tc)
On-State Resistance (Rds On) @ 60A, 10V 9 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 93 nC
Input Capacitance (Ciss) @ 25V 2900 pF
Power Dissipation (Max) 2.4 (Ta), 170 (Tc) W
Operating Temperature Range -55 to 175 °C (TJ)
Package Type D2PAK (TO-263-3) Surface Mount
Product Status Obsolete

Substitute Part Grouping Explanation

Substitute parts for the IRF1104STRR are selected based on the following criteria:

Primary Compatibility Parameters:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 40V
  • Package Type: D2PAK (TO-263-3) surface mount format
  • FET Type: N-Channel MOSFET
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Gate Voltage (Vgs Max): ±20V

Secondary Performance Parameters:

  • Continuous Drain Current (Id): Rated capacity at or above application requirements
  • On-State Resistance (Rds On): Lower or equivalent values preferred for thermal performance
  • Gate Charge (Qg): Affects switching speed and drive circuit requirements
  • Input Capacitance (Ciss): Influences gate drive characteristics

Substitutes are grouped into two categories based on voltage rating and current handling:

Group 1 (40V Rating): AOB4184 - Maintains exact voltage specification with reduced current rating (50A Tc) and improved RoHS compliance.

Group 2 (55V Rating): STB85NF55T4 and STB140NF55T4 - Provide higher voltage margin (55V) with comparable or superior current ratings (80A Tc) and active product status with full RoHS3 compliance.

Parameter Comparison

Parameter IRF1104STRR (Main) AOB4184 STB85NF55T4 STB140NF55T4
Manufacturer Infineon Technologies Alpha & Omega Semiconductor STMicroelectronics STMicroelectronics
Vdss (V) 40 40 55 55
Id @ 25°C (A, Tc) 100 50 80 80
Rds On @ 10V (mOhm) 9 @ 60A 10 @ 20A 8 @ 40A 8 @ 40A
Vgs(th) @ 250µA (V) 4 3 4 4
Qg @ 10V (nC) 93 35 150 142
Ciss @ Vds (pF) 2900 @ 25V 1800 @ 20V 3700 @ 25V 5300 @ 25V
Power Dissipation (W, Tc) 170 50 300 300
Operating Temperature (°C) -55 to 175 -55 to 175 -55 to 175 -55 to 175
Package D2PAK (TO-263-3) D2PAK (TO-263-3) D2PAK (TO-263-3) D2PAK (TO-263-3)
Product Status Obsolete Active Active Active
RoHS Status Non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

For Direct Voltage Specification Match (40V): The AOB4184 from Alpha & Omega Semiconductor maintains the exact 40V Vdss rating of the IRF1104STRR. This part is active in production and ROHS3 compliant. The AOB4184 is suitable for applications where the 40V specification is a design requirement and current demand does not exceed 50A (Tc). The reduced gate charge (35 nC) compared to the IRF1104STRR (93 nC) results in faster switching characteristics and lower gate drive power requirements.

For Enhanced Voltage Margin and Performance (55V): The STB85NF55T4 and STB140NF55T4 from STMicroelectronics provide a 55V Vdss rating, offering additional voltage headroom beyond the original 40V specification. Both parts are active products with ROHS3 compliance and deliver 80A continuous drain current (Tc), which exceeds the IRF1104STRR's 100A rating at higher case temperatures. The STripFET™ II series design provides superior thermal performance with 300W power dissipation capability (Tc) compared to the IRF1104STRR's 170W (Tc). These parts are recommended for new designs where voltage margin and long-term supply chain stability are priorities.

Compliance Considerations: All three substitute parts are ROHS3 compliant, addressing environmental and regulatory requirements that the obsolete IRF1104STRR does not meet. All substitute parts maintain the -55°C to 175°C operating temperature range and ±20V gate voltage specification of the original device.

Frequently Asked Questions (FAQ)

Q: Can the AOB4184 directly replace the IRF1104STRR in all applications?

A: The AOB4184 maintains the 40V Vdss specification and D2PAK package compatibility. However, the continuous drain current rating is 50A (Tc) compared to the IRF1104STRR's 100A (Tc). Substitution is valid only if the application's maximum continuous drain current requirement does not exceed 50A at the case temperature operating point. Gate charge is significantly lower (35 nC vs. 93 nC), which may require gate drive circuit adjustment.

Q: What is the advantage of using STB85NF55T4 or STB140NF55T4 over the AOB4184?

A: The STMicroelectronics parts provide 55V Vdss rating instead of 40V, offering additional voltage safety margin. Both deliver 80A continuous drain current (Tc) and 300W power dissipation (Tc), providing superior thermal performance. These parts are from an active product line with established long-term availability. The choice between STB85NF55T4 and STB140NF55T4 depends on specific gate charge and input capacitance requirements for the gate drive circuit.

Q: Are all substitute parts available in the same D2PAK package?

A: Yes. The IRF1104STRR, AOB4184, STB85NF55T4, and STB140NF55T4 are all supplied in D2PAK (TO-263-3) surface mount package format with 2 leads plus tab. PCB layout and thermal management considerations remain consistent across all parts.

Q: What is the difference between STB85NF55T4 and STB140NF55T4?

A: Both parts share identical electrical ratings: 55V Vdss, 80A continuous drain current (Tc), 8 mOhm Rds On @ 40A/10V, and 300W power dissipation (Tc). The primary differences are gate charge (150 nC for STB85NF55T4 vs. 142 nC for STB140NF55T4) and input capacitance (3700 pF vs. 5300 pF). These differences affect gate drive circuit design but do not impact functional substitution capability. Both are active products with ROHS3 compliance.

Q: Is the IRF1104STRR obsolete, and what does this mean for procurement?

A: The IRF1104STRR is classified as obsolete by Infineon Technologies. Obsolete status indicates that the manufacturer has discontinued production and will not accept new orders. Existing inventory may be available through authorized distributors, but long-term supply cannot be guaranteed. For new designs and ongoing production, substitution with active products (AOB4184, STB85NF55T4, or STB140NF55T4) is necessary.

Q: Do all substitute parts meet RoHS compliance requirements?

A: Yes. The AOB4184, STB85NF55T4, and STB140NF55T4 are all ROHS3 compliant. The original IRF1104STRR is RoHS non-compliant. If RoHS compliance is a design or regulatory requirement, substitution with any of the three active parts is mandatory.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the total charge required to switch the MOSFET from off to on state. The IRF1104STRR requires 93 nC, the AOB4184 requires 35 nC, and the STMicroelectronics parts require 142-150 nC. Lower gate charge (AOB4184) reduces gate drive power dissipation and allows faster switching with lower drive current. Higher gate charge (STMicroelectronics parts) may require higher gate drive current or longer switching times. Gate drive circuit design must accommodate the selected part's gate charge specification.

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