IRF1104S N-Channel 40V 100A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF1104S is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage and 100A continuous drain current in the D2PAK surface mount package. This device is classified as obsolete, necessitating identification of active equivalent and substitute parts for new designs and production continuity. The IRF1104S operates across the industrial temperature range of -55°C to 175°C and is designed for applications requiring high current switching capability in a compact surface mount form factor.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	100	A (Tc)
On-Resistance (Rds On) @ 60A, 10V	9	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	93	nC
Input Capacitance (Ciss) @ 25V	2900	pF
Power Dissipation (Max)	2.4 (Ta), 170 (Tc)	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
Technology	MOSFET (Metal Oxide)	N-Channel

Substitute Part Grouping Explanation

Substitution of the IRF1104S is determined by strict alignment of electrical and mechanical parameters. The primary substitution criteria are:

Critical Parameters for Substitution:

Drain-to-Source Voltage (Vdss): Must equal or exceed 40V
Continuous Drain Current (Id): Must equal or exceed 100A at Tc
Package Type: Must be D2PAK (TO-263-3) surface mount
Operating Temperature Range: Must span -55°C to 175°C
Gate Drive Voltage: Must support 10V drive voltage

Substitute Parts Identified:

Group 1 - Direct Electrical Equivalents (40V, 100A+):

IPB100N04S4H2ATMA1 (Infineon OptiMOS™, 40V, 100A, Active)
STB100NF04T4 (STMicroelectronics STripFET™ II, 40V, 120A, Active)

Group 2 - Voltage-Elevated Alternatives (55V, 80A+):

STB140NF55T4 (STMicroelectronics STripFET™ II, 55V, 80A, Active)
STB85NF55T4 (STMicroelectronics STripFET™ II, 55V, 80A, Active)

Group 3 - Voltage-Matched, Current-Reduced Alternative (40V, 80A):

STB170NF04 (STMicroelectronics STripFET™ II, 40V, 80A, Active)

Group 4 - Lower Current Alternative (40V, 50A):

AOB4184 (Alpha & Omega Semiconductor, 40V, 50A, Active)

All substitute parts maintain D2PAK packaging, surface mount technology, and compatible operating temperature ranges. Substitution within Group 1 provides direct replacement capability. Groups 2, 3, and 4 offer alternatives where application requirements permit voltage elevation or current reduction.

Parameter Comparison

Parameter	IRF1104S	IPB100N04S4H2ATMA1	STB100NF04T4	STB140NF55T4	STB85NF55T4	STB170NF04	AOB4184
Manufacturer	Infineon	Infineon	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	Alpha & Omega
Vdss (V)	40	40	40	55	55	40	40
Id @ Tc (A)	100	100	120	80	80	80	50
Rds On @ 10V (mOhm)	9 @ 60A	2.4 @ 100A	4.6 @ 50A	8 @ 40A	8 @ 40A	5 @ 40A	10 @ 20A
Vgs(th) @ 250µA (V)	4	4	4	4	4	4	3
Qg @ 10V (nC)	93	90	150	142	150	170	35
Ciss @ 25V (pF)	2900	7180	5100	5300	3700	9000	1800
Power Dissipation Tc (W)	170	115	300	300	300	300	50
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	D2PAK	PG-TO263-3-2	D2PAK	D2PAK	D2PAK	TO-263 (D2PAK)	TO-263 (D2PAK)
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
RoHS Compliance	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation - Direct Replacement:

The IPB100N04S4H2ATMA1 (Infineon OptiMOS™ series) is the preferred direct substitute for the IRF1104S. This part maintains identical voltage and current ratings (40V, 100A), operates across the same temperature range (-55°C to 175°C), and is packaged in the compatible PG-TO263-3-2 form factor. The IPB100N04S4H2ATMA1 is active in production with ROHS3 compliance, addressing the obsolescence of the IRF1104S while providing superior on-resistance performance (2.4 mOhm vs. 9 mOhm at rated conditions). Inventory availability is substantial (35,400 units).

Secondary Recommendation - Enhanced Performance Alternative:

The STB100NF04T4 (STMicroelectronics STripFET™ II series) offers 40V, 120A continuous drain current in D2PAK packaging. This part exceeds the IRF1104S current rating by 20A, providing design margin for high-current applications. The STB100NF04T4 features improved on-resistance (4.6 mOhm @ 50A) and higher power dissipation capability (300W Tc vs. 170W Tc). This device is AEC-Q101 automotive qualified and ROHS3 compliant. Inventory availability is 15,265 units.

Voltage-Elevated Alternatives:

The STB140NF55T4 and STB85NF55T4 are suitable where application voltage headroom permits 55V operation. Both devices deliver 80A continuous drain current with 300W power dissipation capability and are ROHS3 compliant. These parts are appropriate for designs with voltage margins above 40V.

Current-Reduced Alternative:

The STB170NF04 (40V, 80A) is applicable where application requirements do not demand the full 100A rating. This part maintains 40V voltage compatibility and provides 300W power dissipation.

Lower Current Alternative:

The AOB4184 (40V, 50A) is suitable only for applications with reduced current requirements. This part features the lowest gate charge (35 nC) and input capacitance (1800 pF), beneficial for high-frequency switching applications with current demands not exceeding 50A.

All recommended substitutes are active products with current production status and RoHS compliance, ensuring long-term supply chain viability and regulatory alignment.

Frequently Asked Questions (FAQ)

Q1: Can the IPB100N04S4H2ATMA1 directly replace the IRF1104S without circuit modification?

The IPB100N04S4H2ATMA1 maintains identical electrical specifications (40V, 100A) and operates across the same temperature range. Both devices use D2PAK packaging with compatible pinouts. Direct substitution is permissible from an electrical standpoint. However, the IPB100N04S4H2ATMA1 features lower on-resistance (2.4 mOhm vs. 9 mOhm), resulting in reduced power dissipation and improved thermal performance. Circuit validation is recommended to confirm thermal management adequacy with the improved efficiency characteristics.

Q2: What is the primary difference between Group 1 and Group 2 substitute parts?

Group 1 parts (IPB100N04S4H2ATMA1, STB100NF04T4) maintain the 40V voltage rating of the IRF1104S and deliver 100A or greater continuous drain current. Group 2 parts (STB140NF55T4, STB85NF55T4) operate at 55V with 80A continuous drain current. Group 2 substitution is appropriate only when application voltage specifications permit 55V operation. The elevated voltage rating provides additional design margin but requires verification that all circuit components tolerate the higher voltage.

Q3: Why does the AOB4184 have significantly lower gate charge and input capacitance?

The AOB4184 is rated for 50A continuous drain current, substantially lower than the IRF1104S 100A rating. Lower current-rated MOSFETs typically feature reduced die size and lower parasitic capacitances. The AOB4184 gate charge of 35 nC and input capacitance of 1800 pF reflect this reduced die area. This part is suitable only for applications with current requirements not exceeding 50A.

Q4: Are all substitute parts RoHS compliant?

All identified substitute parts are ROHS3 compliant. The IRF1104S is RoHS non-compliant. Substitution with any recommended part addresses regulatory compliance requirements for new designs and production.

Q5: What is the significance of the STB100NF04T4 AEC-Q101 automotive qualification?

AEC-Q101 qualification indicates the STB100NF04T4 meets automotive industry reliability and quality standards. This qualification is relevant only if the application requires automotive-grade components. For non-automotive applications, AEC-Q101 qualification provides no functional advantage but confirms rigorous quality validation.

Q6: Can the STB170NF04 be used in applications requiring 100A continuous current?

The STB170NF04 is rated for 80A continuous drain current at Tc. Use in applications requiring sustained 100A operation exceeds the device rating and violates absolute maximum ratings. The STB170NF04 is suitable only for applications with maximum continuous current requirements of 80A or less.

Q7: How do on-resistance differences affect thermal performance?

On-resistance directly determines power dissipation at a given current level. The IPB100N04S4H2ATMA1 (2.4 mOhm @ 100A, 10V) dissipates significantly less power than the IRF1104S (9 mOhm @ 60A, 10V) at equivalent current levels. Lower on-resistance reduces junction temperature rise, improving reliability and potentially permitting higher ambient operating temperatures or reduced heatsinking requirements.

Q8: Are the D2PAK and TO-263-3 packages mechanically identical?

D2PAK and TO-263-3 are equivalent designations for the same surface mount package. Both refer to a three-terminal package with two leads and a thermal tab. All substitute parts use this package family and are mechanically compatible with IRF1104S PCB layouts.

Q9: What is the impact of higher gate charge on circuit design?

Gate charge (Qg) determines the charge quantity required to switch the MOSFET from off to on state. Higher gate charge requires greater gate driver current or longer switching time. The STB170NF04 (170 nC) and STB85NF55T4 (150 nC) have higher gate charge than the IRF1104S (93 nC). Applications with current-limited gate drivers may experience slower switching transitions with these parts. The AOB4184 (35 nC) permits faster switching with lower gate driver current.

Q10: Which substitute part offers the best thermal performance?

The STB100NF04T4 provides the highest power dissipation capability (300W Tc) combined with low on-resistance (4.6 mOhm @ 50A, 10V). This combination delivers superior thermal performance in high-current applications. The IPB100N04S4H2ATMA1 offers the lowest on-resistance (2.4 mOhm @ 100A, 10V) but with lower maximum power dissipation (115W Tc), making it optimal for efficiency-critical applications with adequate heatsinking.

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