IRF1018ESPBF N-Channel 60V 79A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF1018ESPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage and 79A continuous drain current in a D2PAK surface mount package. This device is part of the HEXFET® series and is designed for high-current switching applications requiring efficient power dissipation up to 110W. The IRF1018ESPBF is currently discontinued at DiGi Electronics, making equivalent and substitute parts necessary for ongoing production and maintenance applications. Substitute parts must maintain compatibility with the D2PAK package footprint and support equivalent or superior electrical performance within the 60V voltage class.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	79	A
On-State Resistance (Rds On) @ 47A, 10V	8.4	mOhm
Gate Threshold Voltage (Vgs(th)) @ 100µA	4	V
Gate Charge (Qg) @ 10V	69	nC
Power Dissipation (Max)	110	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitute parts for the IRF1018ESPBF are selected based on the following critical parameters that determine functional equivalence:

Primary Compatibility Criteria:

Drain-to-Source Voltage (Vdss): 60V minimum (allows 75V and 80V rated devices)
Package Type: D2PAK (TO-263-3) surface mount only
Continuous Drain Current (Id): 50A minimum (IRF1018ESPBF rated at 79A)
On-State Resistance (Rds On): ≤ 14.8 mOhm @ 10V gate drive
Gate Threshold Voltage (Vgs(th)): 2.2V to 4V range
Operating Temperature: -55°C to 175°C minimum
RoHS3 Compliance and MSL Level 1 required

Substitution Logic: Devices rated at 50A to 92A continuous drain current with 60V or higher Vdss rating are acceptable substitutes. Devices with lower Rds On values provide improved efficiency. Higher voltage ratings (75V, 80V) provide additional design margin. All substitute parts maintain D2PAK package compatibility and surface mount configuration.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ 10V (mOhm)	Vgs(th) (V)	Qg @ 10V (nC)	Pd Max (W)	Status
IRF1018ESPBF	Infineon	60	79	8.4	4	69	110	Discontinued
IPB081N06L3GATMA1	Infineon	60	50	8.1	2.2	29	79	Active
IPB090N06N3GATMA1	Infineon	60	50	9	4	36	71	Active
BUK768R3-60E,118	Nexperia	60	75	8.3	4	43.1	137	Active
HUF75545S3ST	onsemi	80	75	10	4	235	270	Active
PSMN015-60BS,118	Nexperia	60	50	14.8	4	20.9	86	Active
PSMN7R6-60BS,118	Nexperia	60	92	7.8	4	38.7	149	Active
STB140NF55T4	STMicroelectronics	55	80	8	4	142	300	Active
STB140NF75T4	STMicroelectronics	75	120	7.5	4	218	310	Active
STB75NF75LT4	STMicroelectronics	75	75	11	2.5	90	300	Active
STB85NF55T4	STMicroelectronics	55	80	8	4	150	300	Active

Engineering Selection Recommendations

Primary Substitute (Closest Match): PSMN7R6-60BS,118 from Nexperia provides the closest electrical performance to the IRF1018ESPBF. This device maintains 60V Vdss rating, exceeds the 79A requirement with 92A continuous drain current, and delivers superior on-state resistance of 7.8 mOhm. The part is Active status with full RoHS3 compliance and MSL Level 1 rating. D2PAK package compatibility is confirmed.

Secondary Substitutes (Equivalent Performance): BUK768R3-60E,118 (Nexperia TrenchMOS™) offers 75A continuous current with 8.3 mOhm Rds On and includes AEC-Q101 automotive qualification. STB85NF55T4 (STMicroelectronics STripFET™ II) provides 80A current handling with 8 mOhm Rds On and 300W power dissipation capability. Both maintain D2PAK package and 60V/55V voltage ratings suitable for direct substitution.

Higher Current Alternatives: STB140NF75T4 (STMicroelectronics) supports 120A continuous current at 75V Vdss with 7.5 mOhm Rds On, suitable for applications requiring increased current margin. HUF75545S3ST (onsemi UltraFET™) provides 75A at 80V with enhanced power dissipation (270W), appropriate for thermally demanding designs.

Lower Current Applications: IPB081N06L3GATMA1 and IPB090N06N3GATMA1 (Infineon OptiMOS™) are suitable for applications where 50A continuous current is sufficient, offering reduced gate charge and improved switching characteristics.

Compliance Verification: All substitute parts maintain RoHS3 compliance, MSL Level 1 moisture sensitivity rating, and REACH unaffected status. Operating temperature range -55°C to 175°C is consistent across all options. All parts are currently Active status with confirmed inventory availability.

Frequently Asked Questions (FAQ)

Q: Can I use a substitute part rated at 50A if my application requires 79A? A: No. The IRF1018ESPBF is rated for 79A continuous drain current. Substitute parts must maintain minimum 79A rating or exceed it. PSMN7R6-60BS,118 (92A) and STB140NF75T4 (120A) are appropriate. Lower-rated devices (50A) are not suitable for direct replacement in 79A applications.

Q: What is the significance of Rds On (on-state resistance) in selecting a substitute? A: Rds On directly affects power dissipation and heat generation. Lower Rds On values reduce I²R losses. The IRF1018ESPBF has 8.4 mOhm Rds On. Substitutes with equal or lower Rds On (such as PSMN7R6-60BS,118 at 7.8 mOhm) provide equivalent or improved thermal performance. Higher Rds On values increase power dissipation and may require additional thermal management.

Q: Are all substitute parts compatible with the D2PAK footprint? A: Yes. All listed substitute parts use D2PAK (TO-263-3) surface mount package with identical pin configuration (2 leads + tab). PCB layout and thermal pad design remain compatible without modification.

Q: Can I use a 75V or 80V rated MOSFET in place of the 60V IRF1018ESPBF? A: Yes. Higher voltage-rated devices (75V, 80V) are backward compatible with 60V applications. They provide additional voltage margin and design safety. Examples include STB140NF75T4 (75V) and HUF75545S3ST (80V). Gate drive voltage and threshold characteristics must remain within specified limits.

Q: What does "Active" product status mean versus "Discontinued"? A: Active status indicates the part is currently manufactured and available from distributors. Discontinued status (IRF1018ESPBF) means the manufacturer no longer produces the part. Active substitutes ensure long-term supply chain reliability and availability for production and maintenance.

Q: How do I verify thermal compatibility when substituting parts? A: Compare Power Dissipation (Pd Max) ratings and Rds On values. The IRF1018ESPBF dissipates 110W maximum. PSMN7R6-60BS,118 (149W) and STB85NF55T4 (300W) provide superior thermal headroom. Verify PCB thermal pad design and heatsinking capacity support the substitute part's power dissipation requirements.

Q: Are there differences in gate drive requirements between substitute parts? A: Yes. Gate threshold voltage (Vgs(th)) ranges from 2.2V to 4V across substitutes. The IRF1018ESPBF requires 4V. IPB081N06L3GATMA1 has 2.2V threshold, requiring lower gate drive voltage. Verify gate driver circuit can supply required voltage levels. Gate charge (Qg) varies from 20.9 nC to 235 nC, affecting switching speed and driver current requirements.

Q: Which substitute offers the best efficiency improvement? A: PSMN7R6-60BS,118 provides the lowest on-state resistance (7.8 mOhm) compared to IRF1018ESPBF (8.4 mOhm), reducing conduction losses by approximately 7%. This translates to lower heat generation and improved overall system efficiency in high-current applications.

Q: Do all substitutes maintain the same operating temperature range? A: Yes. All substitute parts operate from -55°C to 175°C junction temperature, matching the IRF1018ESPBF specification. This ensures thermal performance consistency across temperature extremes in industrial and automotive environments.

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