IRF1018ESLPBF Equivalent & Substitute Parts

Part Overview

The IRF1018ESLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage with 79A continuous drain current at 25°C. This device is packaged in TO-262-3 (I2PAK) configuration and is designed for through-hole mounting applications requiring high current switching capability. The IRF1018ESLPBF carries an Obsolete product status, making identification of functionally equivalent alternatives necessary for ongoing design support and component procurement.

Substiute Parts

IRF1018ESLPBF

Infineon TechnologiesIn Stock: 10059IRF1018ESLPBF Datasheet

Current PartRFQ

FDP038AN06A0

onsemiIn Stock: 9185FDP038AN06A0 Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF1018ESLPBF is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
• Continuous Drain Current (Id): Must meet or exceed 79A at 25°C
• Gate Threshold Voltage (Vgs(th)): Must be compatible with 4V specification
• Maximum Gate Voltage (Vgs): Must support ±20V operation
• Operating Temperature Range: Must span -55°C to 175°C

Mechanical Compatibility Criteria:

• Mounting Type: Through-hole configuration required
• Package Category: TO-220 and TO-262 variants acceptable for board-level integration

The FDP038AN06A0 qualifies as a direct substitute based on matching Vdss (60V), exceeding continuous drain current specification (80A Tc), maintaining compatible gate threshold voltage (4V @ 250µA), and supporting identical operating temperature range (-55°C to 175°C). Both devices utilize N-Channel MOSFET technology with metal-oxide construction.

Parameter Comparison

Engineering Selection Recommendations

The FDP038AN06A0 serves as a functional equivalent for the obsolete IRF1018ESLPBF based on the following engineering criteria:

Electrical Performance: Both devices operate at 60V Vdss with continuous drain current ratings within the same performance class (79A vs. 80A at Tc). The FDP038AN06A0 exhibits superior on-state resistance (3.8 mOhm vs. 8.4 mOhm), resulting in lower conduction losses and reduced thermal dissipation requirements. Gate threshold voltage specifications are equivalent (4V), ensuring compatible gate drive circuits.

Thermal Characteristics: The FDP038AN06A0 provides higher power dissipation capability (310W vs. 110W at Tc), offering improved thermal margin in applications approaching the IRF1018ESLPBF's power limits. Both devices maintain identical operating temperature range (-55°C to 175°C).

Product Availability and Compliance: The FDP038AN06A0 maintains Active product status with 9098 units in stock, ensuring long-term availability. The substitute part is ROHS3 Compliant and REACH Unaffected, meeting current regulatory requirements. The IRF1018ESLPBF's Obsolete status necessitates transition to the FDP038AN06A0 for new designs and ongoing production support.

Package Consideration: The FDP038AN06A0 utilizes TO-220-3 packaging versus the IRF1018ESLPBF's TO-262-3 configuration. PCB layout modifications are required to accommodate the different pin spacing and thermal pad geometry. Both packages support through-hole mounting.

Frequently Asked Questions (FAQ)

Q: Can the FDP038AN06A0 directly replace the IRF1018ESLPBF without circuit modifications?

A: Electrical substitution is valid based on matching Vdss (60V), equivalent gate threshold voltage (4V), and identical operating temperature range. However, package geometry differs (TO-220-3 vs. TO-262-3), requiring PCB layout changes. Gate drive circuits remain compatible due to matching Vgs(th) specifications.

Q: What are the key differences in electrical performance between these devices?

A: The FDP038AN06A0 provides lower on-state resistance (3.8 mOhm vs. 8.4 mOhm at 10V), reducing conduction losses. Gate charge is higher (124 nC vs. 69 nC), affecting switching speed. Input capacitance differs (6400 pF vs. 2290 pF), influencing gate drive requirements. Power dissipation capability is significantly higher (310W vs. 110W).

Q: Are there thermal management differences between the TO-262-3 and TO-220-3 packages?

A: Both packages are through-hole configurations with thermal pads. The TO-220-3 package typically provides superior thermal performance due to larger die contact area and improved heat spreading. The FDP038AN06A0's higher power rating (310W) reflects this thermal advantage.

Q: What is the impact of higher gate charge on circuit design?

A: The FDP038AN06A0's higher gate charge (124 nC vs. 69 nC) requires gate drive circuits capable of supplying adequate current to charge the gate within the desired switching time. Existing gate drive circuits designed for the IRF1018ESLPBF must be evaluated for current capacity.

Q: Is the FDP038AN06A0 suitable for high-frequency switching applications?

A: The FDP038AN06A0 exhibits higher gate charge and input capacitance, resulting in slower switching transitions compared to the IRF1018ESLPBF. Applications requiring switching frequencies above 100 kHz should evaluate the impact of increased switching losses.

Q: What compliance certifications apply to the FDP038AN06A0?

A: The FDP038AN06A0 is ROHS3 Compliant and REACH Unaffected. Both devices carry EAR99 ECCN classification and 8541.29.0095 HTSUS code.