IRF1010ZSTRRPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF1010ZSTRRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage and 75A continuous drain current in a D2PAK surface mount package. This device is part of the HEXFET® series and delivers 140W maximum power dissipation. The part is currently discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components for ongoing production and design requirements. Equivalent parts maintain identical or superior electrical performance within the same package footprint, while substitute parts offer functional alternatives with acceptable parameter variations for specific application requirements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	75	A (Tc)
On-State Resistance (Rds On) @ 75A, 10V	7.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	95	nC
Power Dissipation (Max)	140	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
Gate Voltage (Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the IRF1010ZSTRRPBF is determined by the following critical parameters: drain-to-source voltage rating (Vdss), continuous drain current capability (Id), on-state resistance (Rds On), package type (D2PAK), and operating temperature range. Substitute parts are grouped into three categories based on their relationship to the main part specifications:

Category 1: Parametric Equivalents – Parts with identical Vdss (55V), Id (75A), and Rds On (7.5mOhm @ 75A, 10V) specifications. These parts are direct functional replacements with the same electrical performance characteristics.

Category 2: Voltage-Rated Substitutes – Parts with higher Vdss ratings (60V, 75V, or 80V) and comparable or superior Id ratings (50A to 92A). These parts operate safely in circuits designed for 55V maximum, with improved voltage margin and typically lower Rds On values at reduced current levels.

Category 3: Current-Rated Substitutes – Parts with Vdss ratings at or above 55V and Id ratings at or above 75A. These parts provide equal or enhanced current handling capability with comparable or superior power dissipation ratings.

All substitute parts maintain D2PAK package compatibility, ±20V gate voltage rating, and -55°C to 175°C operating temperature range. RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity are consistent across all listed alternatives.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Pd Max (W)	Status
IRF1010ZSTRRPBF	Infineon	55	75	7.5 @ 75A, 10V	95 @ 10V	140	Discontinued
IRF1010ZSTRLPBF	Infineon	55	75	7.5 @ 75A, 10V	95 @ 10V	140	Not For New Designs
IPB081N06L3GATMA1	Infineon	60	50	8.1 @ 50A, 10V	29 @ 4.5V	79	Active
IPB090N06N3GATMA1	Infineon	60	50	9 @ 50A, 10V	36 @ 10V	71	Active
BUK7610-55AL,118	Nexperia	55	75	10 @ 25A, 10V	124 @ 10V	300	Obsolete
BUK9609-40B,118	Nexperia	40	75	7 @ 25A, 10V	32 @ 5V	157	Active
FDB060AN08A0	onsemi	75	80	6 @ 80A, 10V	95 @ 10V	255	Active
HUF75545S3ST	onsemi	80	75	10 @ 75A, 10V	235 @ 20V	270	Active
PSMN7R6-60BS,118	Nexperia	60	92	7.8 @ 25A, 10V	38.7 @ 10V	149	Active
STB140NF55T4	STMicroelectronics	55	80	8 @ 40A, 10V	142 @ 10V	300	Active
STB140NF75T4	STMicroelectronics	75	120	7.5 @ 70A, 10V	218 @ 10V	310	Active

Engineering Selection Recommendations

Direct Replacement (Parametric Equivalent): IRF1010ZSTRLPBF is the parametric equivalent with identical electrical specifications. However, this part carries "Not For New Designs" status. For new production designs, this option is not recommended despite electrical equivalence.

Primary Active Alternatives: STB140NF55T4 (STMicroelectronics) maintains 55V Vdss rating with 80A Id capability and 300W power dissipation. Active product status and STripFET™ II series technology provide long-term availability. This part is suitable for direct substitution in applications where the 55V rating is critical.

STB140NF75T4 (STMicroelectronics) offers enhanced specifications with 75V Vdss, 120A Id, and 310W power dissipation. Active status and STripFET™ III series designation ensure supply continuity. This part is appropriate for applications tolerating higher voltage ratings.

FDB060AN08A0 (onsemi) provides 75V Vdss, 80A Id, and 255W power dissipation with superior Rds On (6mOhm @ 80A, 10V). PowerTrench® technology and active status support long-term use.

HUF75545S3ST (onsemi) delivers 80V Vdss, 75A Id, and 270W power dissipation. UltraFET™ series and active status provide reliable supply. Gate charge is elevated (235nC @ 20V) compared to the main part.

Secondary Alternatives (Higher Current Capability): PSMN7R6-60BS,118 (Nexperia) offers 60V Vdss with 92A Id capability and 149W power dissipation. Active status and superior current rating support applications requiring increased current margin.

Voltage-Reduced Alternative: BUK9609-40B,118 (Nexperia) operates at 40V Vdss with 75A Id and 157W power dissipation. This part is suitable only for applications where the circuit voltage does not exceed 40V. AEC-Q101 automotive qualification is available.

Not Recommended: BUK7610-55AL,118 carries Obsolete status despite matching 55V/75A specifications. IPB081N06L3GATMA1 and IPB090N06N3GATMA1 have reduced current ratings (50A) and lower power dissipation, limiting their applicability to lower-power designs.

Frequently Asked Questions (FAQ)

Q: Can I use a substitute part with higher Vdss rating in a 55V circuit? A: Yes. Parts rated for 60V, 75V, or 80V operate safely in 55V circuits. The higher voltage rating provides additional safety margin. Verify that the substitute part's other parameters (Id, Rds On, package) meet application requirements.

Q: What is the difference between Rds On specifications at different current levels? A: On-state resistance varies with drain current and gate voltage. The IRF1010ZSTRRPBF specifies Rds On at 75A and 10V gate voltage. Substitute parts may specify Rds On at different current levels (e.g., 25A or 40A). Lower Rds On values indicate better efficiency at the specified current. Compare values at equivalent operating points for accurate assessment.

Q: Are all listed parts compatible with the D2PAK footprint? A: Yes. All substitute parts use D2PAK (TO-263-3) surface mount packaging with identical lead configuration (2 leads + tab). PCB layout and thermal management considerations remain unchanged.

Q: What does "Not For New Designs" status mean? A: This designation indicates the manufacturer no longer recommends the part for new product development. While the part may remain available, long-term supply is not guaranteed. Active status parts are preferred for new designs.

Q: How does gate charge (Qg) affect circuit performance? A: Gate charge determines the energy required to switch the MOSFET on and off. Higher gate charge increases switching losses and requires more driver current. The IRF1010ZSTRRPBF specifies 95nC @ 10V. Substitutes with lower Qg (e.g., IPB081N06L3GATMA1 at 29nC) reduce switching losses; higher Qg values increase losses. Select based on driver capability and thermal budget.

Q: Can I substitute a 40V-rated part (BUK9609-40B,118) in a 55V application? A: No. The BUK9609-40B,118 is rated for maximum 40V drain-to-source voltage. Using it in a 55V circuit exceeds the device rating and causes failure. This part is suitable only for applications with circuit voltage not exceeding 40V.

Q: What is the significance of RoHS3 compliance and MSL 1 rating? A: RoHS3 compliance confirms the part contains no restricted hazardous substances, meeting environmental regulations. MSL 1 (Unlimited) moisture sensitivity level indicates the part requires no special moisture control during storage and handling, simplifying logistics and manufacturing processes.

Q: How do I verify thermal performance with a substitute part? A: Compare maximum power dissipation (Pd Max) ratings and Rds On values. Higher Pd Max and lower Rds On indicate better thermal performance. Verify that the substitute part's thermal characteristics meet your application's heat dissipation requirements through thermal modeling or testing.

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