IRF1010ZSTRLPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF1010ZSTRLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage and 75A continuous drain current in a D2PAK surface mount package. This device is classified as "Not For New Designs," indicating it has been superseded in Infineon's product portfolio. Alternative components with equivalent or superior electrical characteristics are available from multiple manufacturers including STMicroelectronics, onsemi, and Nexperia USA Inc. Substitution is necessary for new designs, long-term availability assurance, and access to active product support.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	75	A
On-State Resistance (Rds On) @ 75A, 10V	7.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	95	nC
Power Dissipation (Max)	140	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution logic for the IRF1010ZSTRLPBF is based on the following critical parameters:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 55V nominal
Continuous Drain Current (Id): 75A or higher
Package: D2PAK (TO-263-3) surface mount
Operating Temperature: -55°C to 175°C

Secondary Compatibility Factors:

On-State Resistance (Rds On): Equal to or lower than 7.5 mOhm at rated current and gate voltage
Gate Threshold Voltage (Vgs(th)): Within ±20V gate voltage specification
Gate Charge (Qg): Lower values preferred for faster switching
Power Dissipation: 140W or higher

Substitute parts are grouped into three categories:

Category 1: Direct Voltage & Current Equivalents (55V, 75A) Parts matching both 55V Vdss and 75A Id rating in D2PAK package.

Category 2: Higher Voltage Rated Alternatives (60V-80V, 75A+) Parts with elevated voltage ratings suitable for 55V applications with design margin, maintaining or exceeding 75A current capability.

Category 3: Enhanced Current Capability (55V, 80A-120A) Parts rated for 55V with current ratings exceeding 75A, providing thermal and current margin.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Pd Max (W)	Status
IRF1010ZSTRLPBF	Infineon	55	75	7.5	95	140	Not For New Designs
HUF75345S3ST	onsemi	55	75	7	275	325	Active
HUF75545S3ST	onsemi	80	75	10	235	270	Active
STB140NF55T4	STMicroelectronics	55	80	8	142	300	Active
STB140NF75T4	STMicroelectronics	75	120	7.5	218	310	Active
STB150NF55T4	STMicroelectronics	55	120	6	190	300	Active
BUK7610-55AL,118	Nexperia	55	75	10	124	300	Obsolete
BUK9609-40B,118	Nexperia	40	75	7	32	157	Active
PSMN7R6-60BS,118	Nexperia	60	92	7.8	38.7	149	Active
IPB081N06L3GATMA1	Infineon	60	50	8.1	29	79	Active
IPB090N06N3GATMA1	Infineon	60	50	9	36	71	Active

Engineering Selection Recommendations

Primary Recommendation: HUF75345S3ST (onsemi)

HUF75345S3ST provides direct electrical equivalence at 55V/75A with superior on-state resistance (7 mOhm vs. 7.5 mOhm) and significantly higher power dissipation rating (325W vs. 140W). Product status is Active with full manufacturer support. D2PAK package compatibility is confirmed. This part is suitable for direct replacement in existing designs.

Secondary Recommendation: STB150NF55T4 (STMicroelectronics)

STB150NF55T4 maintains 55V rating with enhanced current capability (120A vs. 75A) and superior on-state resistance (6 mOhm). Power dissipation rating of 300W provides substantial thermal margin. Product status is Active. This part is recommended for new designs requiring increased current headroom or thermal performance.

Alternative for Higher Voltage Margin: STB140NF75T4 (STMicroelectronics)

STB140NF75T4 offers 75V rating (vs. 55V) with 120A current capability and matching on-state resistance (7.5 mOhm). Suitable for applications requiring elevated voltage rating with maintained current performance. Product status is Active.

Not Recommended: IPB081N06L3GATMA1 and IPB090N06N3GATMA1

These Infineon OptiMOS™ parts are rated for only 50A continuous drain current, which is below the 75A requirement of the IRF1010ZSTRLPBF. Substitution would require circuit redesign and is not suitable for direct replacement.

Not Recommended: BUK9609-40B,118

This part is rated for 40V Vdss, which is below the 55V specification of the IRF1010ZSTRLPBF. Voltage derating would be required and is not suitable for direct replacement.

Frequently Asked Questions (FAQ)

Q1: Can HUF75345S3ST directly replace IRF1010ZSTRLPBF without circuit modification?

Yes. HUF75345S3ST matches the critical electrical parameters: 55V Vdss, 75A Id, D2PAK package, and -55°C to 175°C operating range. On-state resistance is superior (7 mOhm vs. 7.5 mOhm). No circuit modification is required.

Q2: Why is STB150NF55T4 recommended for new designs instead of HUF75345S3ST?

STB150NF55T4 provides enhanced current capability (120A vs. 75A) and superior on-state resistance (6 mOhm vs. 7 mOhm), resulting in lower power dissipation and improved thermal performance. Product status is Active with ongoing manufacturer support. Both are suitable; STB150NF55T4 offers additional design margin.

Q3: Can parts with higher voltage ratings (60V, 75V, 80V) be used in a 55V application?

Yes. Higher voltage-rated MOSFETs can be used in lower voltage applications. The device will operate within its safe operating area. However, verify that on-state resistance, gate charge, and other switching characteristics are acceptable for the specific application.

Q4: What is the significance of the "Not For New Designs" status of IRF1010ZSTRLPBF?

This status indicates that Infineon has discontinued active development and support for this part. While existing inventory may be available, the manufacturer recommends using alternative parts for new designs. Long-term availability cannot be guaranteed.

Q5: Are all substitute parts available in the same D2PAK package?

Yes. All recommended substitute parts are specified in D2PAK (TO-263-3) surface mount package, ensuring mechanical and thermal compatibility with existing PCB layouts.

Q6: How does gate charge (Qg) affect substitution suitability?

Gate charge determines switching speed and gate drive requirements. Lower Qg values result in faster switching and reduced gate drive power. The IRF1010ZSTRLPBF has Qg of 95 nC. Substitute parts with higher Qg (e.g., HUF75345S3ST at 275 nC) may require gate drive circuit verification but are functionally compatible.

Q7: Why is BUK7610-55AL,118 listed but not recommended?

BUK7610-55AL,118 matches voltage and current ratings (55V/75A) but is classified as Obsolete. While it may be available from inventory, it lacks active manufacturer support and is not suitable for new designs or long-term applications.

Q8: Can IPB081N06L3GATMA1 be used if the application current requirement is reduced?

No. IPB081N06L3GATMA1 is rated for only 50A continuous drain current, which is 25A below the IRF1010ZSTRLPBF specification. Using this part would require significant circuit redesign and is not a valid substitution strategy.

Q9: What compliance certifications apply to these substitute parts?

All recommended substitute parts are RoHS3 compliant and REACH unaffected. BUK7610-55AL,118 and BUK9609-40B,118 carry AEC-Q101 automotive qualification. Verify specific compliance requirements for your application.

Q10: How should on-state resistance (Rds On) differences affect part selection?

Lower Rds On values reduce conduction losses and heat generation. The IRF1010ZSTRLPBF specifies 7.5 mOhm. Substitute parts with equal or lower Rds On (e.g., HUF75345S3ST at 7 mOhm, STB150NF55T4 at 6 mOhm) are preferred. Parts with higher Rds On (e.g., BUK7610-55AL,118 at 10 mOhm) increase power dissipation and require thermal analysis.

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