IRF1010ZS N-Channel MOSFET 55V 75A D2PAK Equivalent & Substitute Parts

Part Overview

The IRF1010ZS is an N-Channel MOSFET manufactured by Infineon Technologies in the HEXFET® series, rated for 55V drain-to-source voltage and 75A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete product status. Due to its obsolescence, identifying functionally equivalent substitute parts is necessary for design continuity, procurement flexibility, and long-term supply chain management. Substitute parts must maintain compatibility across critical electrical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while accommodating the D2PAK package form factor.

Key Parameters

Parameter	IRF1010ZS Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	75	A (Tc)
On-Resistance (Rds On) @ 75A, 10V	7.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	95	nC
Power Dissipation (Max)	140	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitute parts for the IRF1010ZS are evaluated based on the following critical parameters that determine functional equivalence:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 55V
Continuous Drain Current (Id): Must equal or exceed 75A at Tc
On-Resistance (Rds On): Should be comparable to 7.5mOhm to maintain thermal and efficiency characteristics
Package Type: Must be D2PAK (TO-263-3) for mechanical and thermal compatibility
Operating Temperature Range: Must support -55°C to 175°C (TJ)
FET Type: N-Channel MOSFET technology

Substitution Groups:

Group 1: Direct Voltage/Current Match (55V, 75A) Parts matching both 55V and 75A specifications with D2PAK packaging provide the closest functional equivalence.

Group 2: Higher Voltage Rating (60V or above, 75A or higher) Parts with voltage ratings above 55V and current ratings at or above 75A function as substitutes with enhanced voltage margin, suitable for applications with voltage transient tolerance.

Group 3: Comparable Current Capacity (75A+, 60V) Parts rated for 60V or higher with 75A or greater current capacity accommodate design flexibility while maintaining thermal performance within acceptable ranges.

All substitute parts maintain D2PAK packaging, surface mount technology, and operating temperature range compatibility with the original IRF1010ZS.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Power Diss. (W)	Package	Status
IRF1010ZS	Infineon	55	75	7.5	4	95	140	D2PAK	Obsolete
BUK7610-55AL,118	Nexperia	55	75	10	4	124	300	D2PAK	Obsolete
STB140NF55T4	STMicroelectronics	55	80	8	4	142	300	D2PAK	Active
HUF75545S3ST	onsemi	80	75	10	4	235	270	D2PAK	Active
FDB5800	onsemi	60	80	6	2.5	135	242	D2PAK	Active
FDB070AN06A0	onsemi	60	80	7	4	66	175	D2PAK	Active
PSMN7R6-60BS,118	Nexperia	60	92	7.8	4	38.7	149	D2PAK	Active
IPB081N06L3GATMA1	Infineon	60	50	8.1	2.2	29	79	D2PAK	Active
IPB090N06N3GATMA1	Infineon	60	50	9	4	36	71	D2PAK	Active
BUK9609-40B,118	Nexperia	40	75	7	2	32	157	D2PAK	Active
STB140NF75T4	STMicroelectronics	75	120	7.5	4	218	310	D2PAK	Active

Engineering Selection Recommendations

Primary Recommendation: STB140NF55T4

The STB140NF55T4 from STMicroelectronics is the preferred substitute for the IRF1010ZS. This part maintains identical voltage rating (55V) and exceeds current capacity (80A vs. 75A), providing direct functional compatibility. The STB140NF55T4 is classified as Active product status, ensuring long-term availability and supply chain continuity. RoHS3 compliance and AEC-Q101 automotive qualification provide additional reliability assurance. On-resistance of 8mOhm is marginally higher than the original 7.5mOhm but remains within acceptable thermal performance parameters for most applications.

Secondary Recommendation: FDB5800

The FDB5800 from onsemi provides enhanced performance characteristics with lower on-resistance (6mOhm) and higher current capacity (80A). The 60V rating provides additional voltage margin above the 55V requirement. Active product status and RoHS3 compliance support procurement reliability. This part is suitable for applications requiring improved thermal efficiency or voltage transient tolerance.

Alternative for Voltage Margin: HUF75545S3ST

The HUF75545S3ST from onsemi offers 80V rating with 75A current capacity, providing maximum voltage headroom. Active product status and RoHS3 compliance are confirmed. This part is appropriate for applications operating in high-voltage transient environments or requiring extended voltage safety margin.

Voltage-Reduced Alternative: BUK9609-40B,118

The BUK9609-40B,118 from Nexperia operates at 40V with 75A capacity, suitable only for applications where the 55V rating of the original part exceeds system requirements. This part provides cost optimization for lower-voltage designs while maintaining current capacity and D2PAK packaging.

Not Recommended: IPB081N06L3GATMA1 and IPB090N06N3GATMA1

These Infineon OptiMOS™ parts are rated for only 50A continuous current, falling below the 75A requirement of the IRF1010ZS. These parts are unsuitable for direct substitution in applications requiring full 75A capacity.

Frequently Asked Questions (FAQ)

Q1: Can the STB140NF55T4 directly replace the IRF1010ZS without circuit modifications?

The STB140NF55T4 maintains identical D2PAK packaging, 55V voltage rating, and exceeds the 75A current requirement at 80A. Gate threshold voltage (4V) and maximum gate voltage (±20V) are identical. The part is pin-compatible and electrically compatible for direct substitution in existing PCB layouts. No circuit modifications are required.

Q2: Why do some substitute parts have higher voltage ratings (60V, 75V, 80V) than the original 55V specification?

Higher voltage ratings provide additional safety margin against voltage transients and overshoot conditions in switching applications. A 60V or 80V rated device operating at 55V nominal voltage experiences reduced electrical stress and extended component lifetime. This is a conservative design practice and does not compromise functionality.

Q3: What is the significance of on-resistance (Rds On) differences between substitute parts?

On-resistance directly determines power dissipation and thermal performance. Lower Rds On values (6-7mOhm) generate less heat than higher values (8-10mOhm) at identical current levels. The IRF1010ZS specifies 7.5mOhm. Substitutes with comparable or lower Rds On maintain or improve thermal characteristics. Parts with significantly higher Rds On may require thermal design review in power-limited applications.

Q4: Are all substitute parts RoHS3 compliant?

All recommended substitute parts listed carry RoHS3 compliance certification. The original IRF1010ZS is marked as RoHS non-compliant due to its obsolete status. RoHS3 compliance is mandatory for new designs and procurement in most regulated markets.

Q5: Can the IPB081N06L3GATMA1 or IPB090N06N3GATMA1 be used as substitutes?

These parts are rated for only 50A continuous current, which is 25A below the IRF1010ZS 75A specification. They are unsuitable for applications requiring full 75A capacity. These parts may be considered only for applications where actual operating current does not exceed 50A, requiring design verification.

Q6: What is the difference between Tc (case temperature) and Ta (ambient temperature) current ratings?

Tc (case temperature) ratings assume the device case is maintained at a specified temperature (typically 25°C) through adequate heatsinking. Ta (ambient temperature) ratings assume operation in free air without active cooling. Tc ratings are typically higher and represent the device's true current capacity under proper thermal management. All current ratings in this comparison use Tc specifications for consistency.

Q7: Does the D2PAK package ensure thermal compatibility between substitute parts?

D2PAK (TO-263-3) packaging ensures mechanical and electrical pin compatibility. However, thermal performance depends on die size, internal construction, and power dissipation rating. Parts with higher power dissipation ratings (300W vs. 140W) may have larger dies and improved thermal characteristics. Thermal design review is recommended for applications operating near maximum current or temperature limits.

Q8: Are automotive-qualified parts (AEC-Q101) necessary for non-automotive applications?

AEC-Q101 qualification indicates enhanced reliability testing and quality assurance beyond standard commercial specifications. For non-automotive applications, AEC-Q101 qualification is not mandatory but provides additional confidence in long-term reliability and consistency. Commercial-grade parts without automotive qualification are acceptable for non-automotive use.

Q9: What is the impact of gate charge (Qg) differences on circuit performance?

Gate charge determines the energy required to switch the MOSFET on and off. Higher Qg values (235nC for HUF75545S3ST vs. 95nC for IRF1010ZS) require more gate drive energy and result in slower switching transitions. This affects switching losses and EMI characteristics. For applications with adequate gate drive capability, higher Qg is not problematic. For high-frequency switching applications, lower Qg is preferred.

Q10: Can substitute parts with lower current ratings (50A) be used in parallel with other devices to achieve 75A capacity?

Parallel operation of MOSFETs requires careful design consideration including matched Rds On characteristics, gate drive distribution, and thermal management. This approach is not recommended as a standard substitution strategy. Direct substitution with parts rated for 75A or higher is the preferred engineering practice.

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