IRF1010Z N-Channel MOSFET 55V 75A TO-220AB Equivalent & Substitute Parts

Part Overview

The IRF1010Z is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage and 75A continuous drain current in the TO-220AB package. This device is classified as obsolete, which necessitates identification of active equivalent and substitute components for new designs and production continuity. The IRF1010Z operates across the temperature range of -55°C to 175°C and delivers 140W maximum power dissipation at the case temperature. Substitution is required for applications requiring active product status, improved compliance certifications, or enhanced thermal performance.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	75	A (Tc)
On-State Resistance (Rds On) @ 75A, 10V	7.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	95	nC
Power Dissipation (Max)	140	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220AB	Through Hole
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the IRF1010Z is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 55V minimum
Continuous Drain Current (Id): 75A minimum at case temperature
Package Type: TO-220AB or TO-220-3 (mechanically compatible)
FET Type: N-Channel MOSFET
Operating Temperature Range: -55°C to 175°C minimum

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower or equivalent values preferred for thermal performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Higher ratings provide thermal margin
Product Status: Active status preferred for supply continuity
RoHS Compliance: ROHS3 compliance preferred for regulatory alignment

Substitute parts are grouped into two categories:

Category A - Direct Electrical Equivalents (55V, 75A): Parts matching the exact voltage and current ratings with identical or superior thermal characteristics.

Category B - Higher Voltage/Current Alternatives (60V-75V, 75A-120A): Parts exceeding the original specifications, suitable for applications with higher voltage or current headroom requirements.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	Rds On @ 10V (mOhm)	Qg @ 10V (nC)	Pd Max (W)	Package	Status	RoHS
IRF1010Z	Infineon	55	75	7.5	95	140	TO-220AB	Obsolete	Non-compliant
HUF75344P3	onsemi	55	75	8.0	210	285	TO-220-3	Active	ROHS3
HUF75345P3	onsemi	55	75	7.0	275	325	TO-220-3	Active	ROHS3
PHP191NQ06LT,127	Nexperia	55	75	3.7	95.6	300	TO-220AB	Obsolete	ROHS3
STP80NF55-06	STMicroelectronics	55	80	6.5	189	300	TO-220	Active	ROHS3
CSD18533KCS	Texas Instruments	60	100	6.3	34	192	TO-220-3	Active	ROHS3
FDP5800	onsemi	60	80	6.0	145	242	TO-220-3	Active	ROHS3
IXTP120N075T2	IXYS	75	120	7.7	78	250	TO-220-3	Active	ROHS3
STP140NF75	STMicroelectronics	75	120	7.5	218	310	TO-220	Active	ROHS3
STP60NF06L	STMicroelectronics	60	60	14.0	66	110	TO-220	Active	ROHS3

Engineering Selection Recommendations

For Direct Replacement (55V, 75A Rating):

HUF75344P3 and HUF75345P3 (onsemi UltraFET™ series) are active alternatives with identical voltage and current ratings. Both devices feature ROHS3 compliance and significantly improved power dissipation (285W and 325W respectively) compared to the IRF1010Z (140W). HUF75345P3 offers superior on-state resistance (7.0 mOhm vs. 7.5 mOhm) and is recommended for thermal-constrained applications. Both parts are available in TO-220-3 package, which is mechanically compatible with TO-220AB applications.

STP80NF55-06 (STMicroelectronics STripFET™ II) provides 80A continuous current at 55V with 6.5 mOhm on-state resistance and 300W power dissipation. This part exceeds the original current specification by 5A and is ROHS3 compliant with active product status.

For Higher Voltage/Current Applications:

CSD18533KCS (Texas Instruments NexFET™) operates at 60V with 100A continuous current (Tc) and features the lowest gate charge (34 nC) among all substitutes, reducing switching losses. ROHS3 compliant and active status.

IXTP120N075T2 (IXYS TrenchT2™) and STP140NF75 (STMicroelectronics STripFET™ III) both operate at 75V with 120A continuous current, providing maximum voltage and current headroom. Both are ROHS3 compliant with active product status.

Not Recommended:

STP60NF06L operates at 60V with only 60A continuous current and exhibits higher on-state resistance (14 mOhm), making it unsuitable for direct replacement in applications requiring 75A performance.

PHP191NQ06LT,127 (Nexperia TrenchMOS™) is classified as obsolete, which does not resolve the supply continuity issue of the original IRF1010Z.

Frequently Asked Questions (FAQ)

Q1: Can HUF75344P3 or HUF75345P3 directly replace IRF1010Z in existing PCB designs?

A: Yes, with mechanical verification. Both parts are available in TO-220-3 package, which is pin-compatible with TO-220AB. The three-pin configuration (Gate, Drain, Source) is identical. Verify PCB footprint tolerances for the TO-220-3 lead spacing before assembly.

Q2: What is the primary advantage of selecting HUF75345P3 over HUF75344P3?

A: HUF75345P3 features lower on-state resistance (7.0 mOhm vs. 8.0 mOhm) and higher power dissipation rating (325W vs. 285W). For applications operating near maximum current (75A), HUF75345P3 reduces conduction losses and thermal stress.

Q3: Why do some substitute parts have higher voltage ratings (60V or 75V) than the original 55V specification?

A: Higher voltage-rated devices provide additional safety margin for transient overvoltage conditions and allow use in applications with higher supply voltages. The 55V minimum requirement of the IRF1010Z is satisfied by all listed substitutes. Selection of higher-voltage parts depends on actual circuit voltage requirements.

Q4: Is RoHS compliance a critical factor for substitution?

A: RoHS compliance is determined by regulatory requirements for the end application. The IRF1010Z is RoHS non-compliant. All recommended active substitutes (HUF75344P3, HUF75345P3, CSD18533KCS, FDP5800, IXTP120N075T2, STP140NF75, STP80NF55-06) are ROHS3 compliant, meeting current environmental regulations.

Q5: What is the significance of gate charge (Qg) differences between parts?

A: Gate charge affects switching speed and driver power requirements. Lower gate charge (CSD18533KCS at 34 nC) reduces switching losses and allows faster switching frequencies. Higher gate charge (HUF75345P3 at 275 nC) may require higher driver current but does not prevent substitution in standard switching applications.

Q6: Can STP60NF06L be used as a substitute for IRF1010Z?

A: No. STP60NF06L is rated for only 60A continuous current, which is below the 75A requirement of the IRF1010Z. This part is unsuitable for applications requiring the full 75A specification.

Q7: What thermal considerations apply when substituting to higher power-dissipation parts?

A: Higher power dissipation ratings (e.g., 325W for HUF75345P3 vs. 140W for IRF1010Z) indicate improved thermal performance and lower junction temperature rise under identical operating conditions. This allows for reduced heatsink requirements or improved reliability margin in thermally constrained designs.

Q8: Are there supply availability differences between substitute options?

A: Yes. HUF75344P3 and HUF75345P3 show highest inventory (21,910 and 25,800 units respectively). CSD18533KCS (5,900 units) and STP80NF55-06 (15,703 units) also have substantial stock. IXTP120N075T2 has limited availability (841 units). Verify current inventory status with suppliers for production planning.

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