IRF1010NSTRL N-Channel 55V 85A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF1010NSTRL is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage and 85A continuous drain current in a D2PAK surface mount package. This device belongs to the HEXFET® series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts with active product status are necessary for new designs and ongoing production requirements. Substitute parts must maintain compatibility with the D2PAK package and preserve critical electrical parameters within acceptable operating ranges.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	85	A (Tc)
On-State Resistance (Rds On) @ 43A, 10V	11	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	120	nC
Power Dissipation (Max)	180	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
RoHS Status	Non-compliant	—

Substitute Part Grouping Explanation

Substitute parts for the IRF1010NSTRL are categorized based on the following substitution criteria:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 55V minimum (allows higher voltage ratings)
Continuous Drain Current (Id): 75A minimum at Tc
Package: D2PAK (TO-263-3) surface mount
Operating Temperature: -55°C to 175°C
Gate Threshold Voltage (Vgs(th)): 2V to 4V range
On-State Resistance (Rds On): 15 mOhm maximum @ 10V

Grouping Logic:

Group 1 – Parametric Equivalents (Identical Electrical Specifications): Parts with matching Vdss (55V), Id (85A), and Rds On (11 mOhm) specifications. These provide direct replacement capability with no circuit redesign required.

Group 2 – MFR Recommended Substitutes (Active Status, Higher Voltage or Current): Parts with Vdss ≥ 55V and Id ≥ 75A, offering improved availability and RoHS3 compliance. These accommodate the original circuit requirements while providing enhanced performance margins.

Group 3 – Functional Alternatives (Different Voltage/Current Trade-offs): Parts with Vdss between 55V and 100V and Id between 50A and 92A. These serve applications where voltage or current headroom differs from the original specification but remain within acceptable operating ranges for the circuit topology.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Product Status	RoHS Status	Package
IRF1010NSTRL	Infineon	55	85	11 @ 43A, 10V	120 @ 10V	180	Obsolete	Non-compliant	D2PAK
IRF1010NSTRLPBF	Infineon	55	85	11 @ 43A, 10V	120 @ 10V	180	Active	ROHS3 Compliant	D2PAK
IPB090N06N3GATMA1	Infineon	60	50	9 @ 50A, 10V	36 @ 10V	71	Active	ROHS3 Compliant	D2PAK
IPB50N10S3L16ATMA1	Infineon	100	50	15.4 @ 50A, 10V	64 @ 10V	100	Active	ROHS3 Compliant	D2PAK
AOB470L	Alpha & Omega	75	100 @ Tc	10.2 @ 30A, 10V	136 @ 10V	268	Active	ROHS3 Compliant	D2PAK
BUK7610-55AL,118	Nexperia	55	75	10 @ 25A, 10V	124 @ 10V	300	Obsolete	ROHS3 Compliant	D2PAK
BUK9612-55B,118	Nexperia	55	75	10 @ 25A, 10V	31 @ 5V	157	Active	ROHS3 Compliant	D2PAK
BUK969R0-60E,118	Nexperia	60	75	8 @ 20A, 10V	29.8 @ 5V	137	Active	ROHS3 Compliant	D2PAK
HUF75545S3ST	onsemi	80	75	10 @ 75A, 10V	235 @ 20V	270	Active	ROHS3 Compliant	D2PAK
PSMN015-60BS,118	Nexperia	60	50	14.8 @ 15A, 10V	20.9 @ 10V	86	Active	ROHS3 Compliant	D2PAK
PSMN7R6-60BS,118	Nexperia	60	92	7.8 @ 25A, 10V	38.7 @ 10V	149	Active	ROHS3 Compliant	D2PAK

Engineering Selection Recommendations

For Direct Replacement (Identical Specifications):

IRF1010NSTRLPBF is the recommended direct substitute. This part maintains identical electrical specifications (55V, 85A, 11 mOhm Rds On) and D2PAK packaging while transitioning from obsolete to active product status. RoHS3 compliance eliminates regulatory risk for new production. No circuit modifications are required.

For Active Production with Enhanced Compliance:

BUK9612-55B,118 (Nexperia) provides equivalent voltage and current ratings (55V, 75A) with active product status and AEC-Q101 automotive qualification. This part is suitable for applications requiring automotive-grade reliability. The lower gate charge (31 nC @ 5V) enables faster switching compared to the original part.

PSMN7R6-60BS,118 (Nexperia) offers 60V, 92A capability with superior on-state resistance (7.8 mOhm @ 25A, 10V) and active status. This part accommodates circuits with slightly elevated voltage headroom while delivering improved current handling and reduced power dissipation.

For Higher Voltage Margin Applications:

AOB470L (Alpha & Omega) provides 75V, 100A rating with active status and RoHS3 compliance. This part is suitable for applications requiring additional voltage safety margin. The higher gate charge (136 nC @ 10V) requires gate driver adjustment compared to the original specification.

HUF75545S3ST (onsemi) delivers 80V, 75A with active status. This part accommodates circuits requiring higher voltage headroom while maintaining comparable current ratings.

For Lower Current Applications:

IPB090N06N3GATMA1 (Infineon OptiMOS™) provides 60V, 50A with active status and superior on-state resistance (9 mOhm @ 50A, 10V). This part is suitable for applications where 50A continuous current is sufficient, offering reduced power dissipation and improved efficiency.

Selection Criteria Summary:

Product Status: Prioritize active parts to ensure long-term availability and supply chain stability.
RoHS Compliance: All recommended substitutes are RoHS3 compliant, eliminating regulatory barriers.
Automotive Grade: BUK9612-55B,118 and BUK969R0-60E,118 carry AEC-Q101 qualification for automotive applications.
Package Compatibility: All listed substitutes maintain D2PAK (TO-263-3) surface mount packaging.
Operating Temperature: All parts support -55°C to 175°C junction temperature range.

Frequently Asked Questions (FAQ)

Q1: Can IRF1010NSTRLPBF be used as a direct replacement for IRF1010NSTRL?

A: Yes. IRF1010NSTRLPBF is a parametric equivalent with identical electrical specifications (55V, 85A, 11 mOhm Rds On) and D2PAK packaging. The primary difference is product status (active vs. obsolete) and RoHS3 compliance. No circuit modifications are required.

Q2: What is the key difference between BUK9612-55B,118 and the original IRF1010NSTRL?

A: Both parts share 55V voltage rating and 75A continuous current. BUK9612-55B,118 has lower gate charge (31 nC @ 5V vs. 120 nC @ 10V), enabling faster switching response. It carries AEC-Q101 automotive qualification and active product status. The lower power dissipation (157W vs. 180W) reduces thermal management requirements.

Q3: Why would I select PSMN7R6-60BS,118 over the original part?

A: PSMN7R6-60BS,118 offers 92A continuous current (vs. 85A) with superior on-state resistance (7.8 mOhm @ 25A, 10V vs. 11 mOhm @ 43A, 10V). The 60V rating provides additional voltage margin. Active product status and RoHS3 compliance ensure supply chain continuity. Lower power dissipation (149W) reduces thermal stress.

Q4: Is IPB090N06N3GATMA1 suitable for applications requiring 85A continuous current?

A: No. IPB090N06N3GATMA1 is rated for 50A continuous current, which is insufficient for the original 85A specification. This part is suitable only for applications where 50A current is adequate. For 85A requirements, select parts rated for 75A or higher continuous current.

Q5: What packaging considerations apply to these substitutes?

A: All listed substitutes use D2PAK (TO-263-3) surface mount packaging, identical to the original IRF1010NSTRL. PCB footprints, thermal pad dimensions, and lead spacing are compatible. No layout modifications are required.

Q6: Are there automotive-qualified alternatives available?

A: Yes. BUK9612-55B,118 and BUK969R0-60E,118 (both Nexperia) carry AEC-Q101 automotive qualification. These parts are suitable for automotive applications requiring functional safety compliance and extended temperature range validation.

Q7: How does gate charge affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge (e.g., 31 nC in BUK9612-55B,118) enables faster switching and reduces gate driver power consumption. Higher gate charge (e.g., 120 nC in IRF1010NSTRL) requires more gate drive energy but may provide improved noise immunity. Gate driver capability must match the selected part's Qg specification.

Q8: What is the significance of RoHS3 compliance?

A: RoHS3 compliance eliminates lead and other hazardous substances, meeting regulatory requirements for products sold in the European Union and other regulated markets. All recommended active substitutes are RoHS3 compliant, eliminating compliance risk for new designs and production.

Q9: Can I use AOB470L in a circuit designed for 55V operation?

A: Yes. AOB470L is rated for 75V, which exceeds the 55V requirement. The higher voltage rating provides additional safety margin and does not degrade circuit performance. However, the higher gate charge (136 nC @ 10V) requires gate driver adjustment compared to the original 120 nC specification.

Q10: What thermal considerations apply when selecting a substitute?

A: Power dissipation varies among substitutes. Lower Rds On values reduce conduction losses. For example, PSMN7R6-60BS,118 (7.8 mOhm) dissipates less power than IRF1010NSTRL (11 mOhm) at equivalent current levels. Verify that the selected part's power dissipation rating and thermal resistance (Rθ) are compatible with the PCB thermal design and heat sink capacity.

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