IRF1010NPBF N-Channel MOSFET 55V 85A TO-220AB Equivalent & Substitute Parts

Part Overview

The IRF1010NPBF is an N-Channel MOSFET manufactured by Infineon Technologies in the HEXFET® series, rated for 55V drain-to-source voltage and 85A continuous drain current in a Through Hole TO-220AB package. This device is classified as "Not For New Designs," indicating it has been superseded in Infineon's product portfolio. Alternative components with equivalent or superior electrical characteristics are available from multiple manufacturers to support ongoing applications and new designs requiring similar performance specifications.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	85	A
On-State Resistance (Rds On) @ 43A, 10V	11	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	120	nC
Power Dissipation (Max)	180	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220AB	Through Hole

Substitute Part Grouping Explanation

Substitution eligibility for the IRF1010NPBF is determined by the following criteria applied strictly to the provided parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Equal to or greater than 55V
Continuous Drain Current (Id): Equal to or greater than 85A at 25°C
Package Type: TO-220AB or TO-220-3 (Through Hole)
FET Type: N-Channel MOSFET
Operating Temperature Range: Minimum -55°C to maximum 175°C or better
Gate Drive Voltage: Compatible with 10V drive specification

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation Rating: Higher ratings provide thermal margin
RoHS3 Compliance and MSL Level 1 status

The substitute parts listed below meet or exceed the primary criteria while maintaining electrical and mechanical compatibility with the IRF1010NPBF application envelope.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Status	Package
IRF1010NPBF	Infineon	55	85	11 @ 43A, 10V	120 @ 10V	180	Not For New Designs	TO-220AB
IRF1018EPBF	Infineon	60	79	8.4 @ 47A, 10V	69 @ 10V	110	Active	TO-220AB
DMNH6008SCTQ	Diodes Inc.	60	130	8 @ 20A, 10V	21 @ 10V	210	Active	TO-220-3
PHP191NQ06LT,127	Nexperia	55	75	3.7 @ 25A, 10V	95.6 @ 5V	300	Obsolete	TO-220AB
STP60NF06L	STMicroelectronics	60	60	14 @ 30A, 10V	66 @ 4.5V	110	Active	TO-220
STP76NF75	STMicroelectronics	75	80	11 @ 40A, 10V	160 @ 10V	300	Active	TO-220
STP80NF55-06	STMicroelectronics	55	80	6.5 @ 40A, 10V	189 @ 10V	300	Active	TO-220

Engineering Selection Recommendations

Recommended Primary Substitute: STP80NF55-06

The STP80NF55-06 from STMicroelectronics provides the closest electrical match to the IRF1010NPBF with identical 55V Vdss rating and comparable 80A continuous drain current. This part is in Active product status, ensuring long-term availability and supply chain stability. The device features improved on-state resistance (6.5 mOhm versus 11 mOhm) and higher power dissipation rating (300W versus 180W), providing superior thermal performance. RoHS3 compliance and MSL Level 1 rating maintain regulatory and manufacturing compatibility.

Alternative Substitute: IRF1018EPBF

The IRF1018EPBF from Infineon offers Active product status with higher voltage rating (60V) and lower on-state resistance (8.4 mOhm). This part is suitable for applications where voltage margin is beneficial. Gate charge is significantly reduced (69 nC versus 120 nC), resulting in lower switching losses.

High-Current Alternative: DMNH6008SCTQ

The DMNH6008SCTQ from Diodes Incorporated provides the highest continuous drain current (130A) among available substitutes with 60V Vdss rating. This part includes AEC-Q101 automotive qualification and is suitable for applications requiring enhanced current capacity. Power dissipation rating of 210W exceeds the original specification.

Voltage-Rated Alternative: STP76NF75

The STP76NF75 from STMicroelectronics offers the highest voltage rating (75V) with 80A current capability and 300W power dissipation. This part is appropriate for applications requiring additional voltage margin or operating in higher-voltage environments.

Obsolete Status Note: PHP191NQ06LT,127

The PHP191NQ06LT,127 from Nexperia is classified as Obsolete and should not be selected for new designs despite superior on-state resistance (3.7 mOhm) and power dissipation (300W). Availability and long-term supply cannot be assured.

Frequently Asked Questions (FAQ)

Q: Can the IRF1018EPBF directly replace the IRF1010NPBF in existing applications?

A: The IRF1018EPBF is electrically compatible as a direct replacement. It provides higher voltage rating (60V versus 55V), lower on-state resistance (8.4 mOhm versus 11 mOhm), and reduced gate charge (69 nC versus 120 nC). The TO-220AB package is identical. Verify that the application does not depend on the specific gate charge or switching characteristics of the original part.

Q: What is the primary difference between TO-220AB and TO-220-3 packages?

A: Both designations refer to the same three-lead Through Hole package with identical pin configuration and thermal characteristics. TO-220AB and TO-220-3 are interchangeable from a mechanical and electrical standpoint. Verify PCB footprint compatibility with your design documentation.

Q: Why is the STP80NF55-06 recommended over other substitutes?

A: The STP80NF55-06 maintains the exact 55V Vdss rating of the original IRF1010NPBF, ensuring no voltage derating is required. It provides comparable current rating (80A versus 85A), improved on-state resistance (6.5 mOhm versus 11 mOhm), and significantly higher power dissipation capability (300W versus 180W). Active product status guarantees availability. These factors make it the most direct functional equivalent.

Q: Can I use a substitute with higher Vdss rating in a 55V application?

A: Yes. A MOSFET with higher Vdss rating (such as STP76NF75 at 75V) can be used in a 55V application without electrical degradation. Higher voltage rating provides additional safety margin. Verify that gate drive voltage remains compatible (all listed substitutes support 10V drive) and that PCB layout accommodates the physical package dimensions.

Q: What does "Not For New Designs" status mean for the IRF1010NPBF?

A: This status indicates that Infineon has discontinued active development and marketing of this part. While existing inventory may be available, the manufacturer does not recommend its use in new product designs. Selecting an Active-status substitute ensures access to current manufacturing processes, improved reliability data, and long-term supply chain support.

Q: Are all listed substitutes RoHS3 compliant?

A: Yes. All substitute parts listed in this document carry RoHS3 compliance certification and MSL Level 1 (Unlimited) moisture sensitivity rating, matching the environmental and regulatory status of the original IRF1010NPBF.

Q: How does gate charge (Qg) affect my circuit design?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (such as DMNH6008SCTQ at 21 nC) reduces switching losses and allows faster switching speeds with lower gate drive current requirements. Higher gate charge (such as STP80NF55-06 at 189 nC) requires more gate drive energy but may provide improved noise immunity in certain applications. Verify compatibility with your gate driver circuit specifications.

Q: Can I use DMNH6008SCTQ in non-automotive applications?

A: Yes. The DMNH6008SCTQ is qualified to AEC-Q101 automotive standards but is not restricted to automotive use. Its superior current rating (130A) and power dissipation (210W) make it suitable for industrial and consumer applications requiring high current capacity. The automotive qualification provides additional reliability assurance.

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