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IRF1010EZLPBF N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The IRF1010EZLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage with 75A continuous drain current at 25°C. This device is packaged in TO-262-3 Long Leads (I2PAK) configuration and is designed for through-hole mounting applications requiring high current switching capability at moderate voltage levels.
The IRF1010EZLPBF carries an Obsolete product status. Identifying equivalent substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production or maintenance requirements for systems utilizing this component.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 60 | V |
| Continuous Drain Current (Id) @ 25°C | 75 | A (Tc) |
| On-State Resistance (Rds On Max) @ 51A, 10V | 8.5 | mOhm |
| Gate Threshold Voltage (Vgs(th) Max) @ 100µA | 4 | V |
| Gate Charge (Qg Max) @ 10V | 86 | nC |
| Maximum Gate Voltage (Vgs Max) | ±20 | V |
| Input Capacitance (Ciss Max) @ 25V | 2810 | pF |
| Power Dissipation (Max) | 140 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Series | HEXFET® | — |
| Mounting Type | Through Hole | — |
Substitute Part Grouping Explanation
Substitution of the IRF1010EZLPBF is determined by electrical and mechanical parameter equivalence within the MOSFET category. The critical parameters that define substitutability are:
Electrical Parameters (Must Match):
- Drain to Source Voltage (Vdss): 60V
- Continuous Drain Current (Id) @ 25°C: 75A (Tc)
- On-State Resistance (Rds On Max): 8.5mOhm @ 51A, 10V
- Gate Threshold Voltage (Vgs(th) Max): 4V @ 100µA
- Gate Charge (Qg Max): 86nC @ 10V
- Maximum Gate Voltage (Vgs Max): ±20V
- Input Capacitance (Ciss Max): 2810pF @ 25V
- Power Dissipation (Max): 140W (Tc)
- Operating Temperature Range: -55°C to 175°C (TJ)
Mechanical Parameters (Must Match):
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Mounting Type: Through Hole
- Series: HEXFET®
The IRF1010EZPBF qualifies as a manufacturer-recommended substitute. While it differs in package configuration (TO-220AB versus TO-262-3), it maintains identical electrical specifications and is manufactured by the same supplier (Infineon Technologies). The difference in packaging affects physical board layout and thermal management characteristics but does not alter electrical performance parameters.
Parameter Comparison
| Parameter | IRF1010EZLPBF (Main Part) | IRF1010EZPBF (Substitute) | Match Status |
|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Identical |
| FET Type | N-Channel | N-Channel | Identical |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Identical |
| Series | HEXFET® | HEXFET® | Identical |
| Drain to Source Voltage (Vdss) | 60V | 60V | Identical |
| Continuous Drain Current (Id) @ 25°C | 75A (Tc) | 75A (Tc) | Identical |
| Rds On (Max) @ 51A, 10V | 8.5mOhm | 8.5mOhm | Identical |
| Vgs(th) (Max) @ 100µA | 4V | 4V | Identical |
| Gate Charge (Qg Max) @ 10V | 86nC | 86nC | Identical |
| Vgs (Max) | ±20V | ±20V | Identical |
| Input Capacitance (Ciss Max) @ 25V | 2810pF | 2810pF | Identical |
| Power Dissipation (Max) | 140W (Tc) | 140W (Tc) | Identical |
| Operating Temperature Range | -55°C to 175°C (TJ) | -55°C to 175°C (TJ) | Identical |
| Mounting Type | Through Hole | Through Hole | Identical |
| Package / Case | TO-262-3 Long Leads, I2PAK | TO-220-3 | Different |
| Supplier Device Package | TO-262 | TO-220AB | Different |
| Product Status | Obsolete | Active | Different |
| RoHS Status | Not specified | ROHS3 Compliant | Different |
| REACH Status | REACH Unaffected | REACH Unaffected | Identical |
Engineering Selection Recommendations
The IRF1010EZPBF is the manufacturer-recommended substitute for the obsolete IRF1010EZLPBF. Selection between these parts is determined by application-specific packaging and thermal management requirements.
Selection Criteria Based on Product Status and Compliance:
The IRF1010EZLPBF is classified as Obsolete, indicating discontinued manufacturing and limited availability. The IRF1010EZPBF maintains Active product status with current manufacturing support from Infineon Technologies, ensuring long-term supply chain reliability.
The IRF1010EZPBF carries ROHS3 Compliance certification, meeting current environmental and regulatory standards for electronic components. Both parts maintain REACH Unaffected status, confirming compliance with chemical substance regulations.
Package Configuration Considerations:
The primary distinction between these parts is packaging. The IRF1010EZLPBF uses TO-262-3 Long Leads (I2PAK) configuration, while the IRF1010EZPBF uses TO-220-3 configuration. Both are through-hole packages with identical electrical performance. Package selection depends on:
- Printed circuit board layout constraints and available footprint space
- Thermal management requirements and heatsink compatibility
- Lead spacing and mechanical mounting specifications for the target application
All electrical parameters, including voltage rating, current capacity, on-state resistance, gate characteristics, and operating temperature range, are identical between the two parts. Direct electrical substitution is supported without circuit modification.
Frequently Asked Questions (FAQ)
Q: Can the IRF1010EZPBF directly replace the IRF1010EZLPBF in existing designs?
A: Electrical substitution is direct. All electrical specifications are identical. Physical board layout modification may be required due to package differences (TO-262 versus TO-220). Verify PCB footprint compatibility and heatsink mounting requirements before implementation.
Q: What is the primary difference between IRF1010EZLPBF and IRF1010EZPBF?
A: The parts are electrically identical. The IRF1010EZLPBF uses TO-262-3 Long Leads (I2PAK) packaging, while the IRF1010EZPBF uses TO-220-3 packaging. Both are through-hole configurations with different physical dimensions and lead configurations.
Q: Why is the IRF1010EZLPBF listed as Obsolete?
A: Infineon Technologies has discontinued manufacturing of the IRF1010EZLPBF. The IRF1010EZPBF remains in active production as the current equivalent offering. For new designs or ongoing production, the IRF1010EZPBF is the recommended selection.
Q: Are there thermal management differences between the two packages?
A: Both packages are rated for 140W maximum power dissipation at Tc. Thermal performance depends on heatsink design, mounting method, and board layout. TO-220 packages typically offer different heatsink compatibility compared to TO-262 packages. Consult thermal design specifications for your specific application.
Q: Do both parts meet current regulatory standards?
A: The IRF1010EZPBF carries ROHS3 Compliance certification. Both parts maintain REACH Unaffected status. For applications requiring specific environmental certifications, verify compliance documentation with your supplier.
Q: What is the base product number for these parts?
A: The base product number is IRF1010. Both IRF1010EZLPBF and IRF1010EZPBF share this common base designation, indicating they are variants of the same core MOSFET design with different packaging options.
Q: Can I use a TO-220 heatsink with the TO-262 package?
A: No. TO-262 and TO-220 packages have different mounting hole configurations and lead layouts. Heatsinks are package-specific. Verify heatsink compatibility with your selected package before procurement.
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