IRF1010EZLPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF1010EZLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage with 75A continuous drain current at 25°C. This device is packaged in TO-262-3 Long Leads (I2PAK) configuration and is designed for through-hole mounting applications requiring high current switching capability at moderate voltage levels.

The IRF1010EZLPBF carries an Obsolete product status. Identifying equivalent substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production or maintenance requirements for systems utilizing this component.

Substiute Parts

IRF1010EZLPBF
Infineon TechnologiesIn Stock: 2013IRF1010EZLPBF Datasheet
IRF1010EZLPBF
Current Part
IRF1010EZPBF
Infineon TechnologiesIn Stock: 15422IRF1010EZPBF Datasheet
IRF1010EZPBF
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 75 A (Tc)
On-State Resistance (Rds On Max) @ 51A, 10V 8.5 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 100µA 4 V
Gate Charge (Qg Max) @ 10V 86 nC
Maximum Gate Voltage (Vgs Max) ±20 V
Input Capacitance (Ciss Max) @ 25V 2810 pF
Power Dissipation (Max) 140 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Series HEXFET®
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution of the IRF1010EZLPBF is determined by electrical and mechanical parameter equivalence within the MOSFET category. The critical parameters that define substitutability are:

Electrical Parameters (Must Match):

  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id) @ 25°C: 75A (Tc)
  • On-State Resistance (Rds On Max): 8.5mOhm @ 51A, 10V
  • Gate Threshold Voltage (Vgs(th) Max): 4V @ 100µA
  • Gate Charge (Qg Max): 86nC @ 10V
  • Maximum Gate Voltage (Vgs Max): ±20V
  • Input Capacitance (Ciss Max): 2810pF @ 25V
  • Power Dissipation (Max): 140W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)

Mechanical Parameters (Must Match):

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Mounting Type: Through Hole
  • Series: HEXFET®

The IRF1010EZPBF qualifies as a manufacturer-recommended substitute. While it differs in package configuration (TO-220AB versus TO-262-3), it maintains identical electrical specifications and is manufactured by the same supplier (Infineon Technologies). The difference in packaging affects physical board layout and thermal management characteristics but does not alter electrical performance parameters.

Parameter Comparison

Parameter IRF1010EZLPBF (Main Part) IRF1010EZPBF (Substitute) Match Status
Manufacturer Infineon Technologies Infineon Technologies Identical
FET Type N-Channel N-Channel Identical
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) Identical
Series HEXFET® HEXFET® Identical
Drain to Source Voltage (Vdss) 60V 60V Identical
Continuous Drain Current (Id) @ 25°C 75A (Tc) 75A (Tc) Identical
Rds On (Max) @ 51A, 10V 8.5mOhm 8.5mOhm Identical
Vgs(th) (Max) @ 100µA 4V 4V Identical
Gate Charge (Qg Max) @ 10V 86nC 86nC Identical
Vgs (Max) ±20V ±20V Identical
Input Capacitance (Ciss Max) @ 25V 2810pF 2810pF Identical
Power Dissipation (Max) 140W (Tc) 140W (Tc) Identical
Operating Temperature Range -55°C to 175°C (TJ) -55°C to 175°C (TJ) Identical
Mounting Type Through Hole Through Hole Identical
Package / Case TO-262-3 Long Leads, I2PAK TO-220-3 Different
Supplier Device Package TO-262 TO-220AB Different
Product Status Obsolete Active Different
RoHS Status Not specified ROHS3 Compliant Different
REACH Status REACH Unaffected REACH Unaffected Identical

Engineering Selection Recommendations

The IRF1010EZPBF is the manufacturer-recommended substitute for the obsolete IRF1010EZLPBF. Selection between these parts is determined by application-specific packaging and thermal management requirements.

Selection Criteria Based on Product Status and Compliance:

The IRF1010EZLPBF is classified as Obsolete, indicating discontinued manufacturing and limited availability. The IRF1010EZPBF maintains Active product status with current manufacturing support from Infineon Technologies, ensuring long-term supply chain reliability.

The IRF1010EZPBF carries ROHS3 Compliance certification, meeting current environmental and regulatory standards for electronic components. Both parts maintain REACH Unaffected status, confirming compliance with chemical substance regulations.

Package Configuration Considerations:

The primary distinction between these parts is packaging. The IRF1010EZLPBF uses TO-262-3 Long Leads (I2PAK) configuration, while the IRF1010EZPBF uses TO-220-3 configuration. Both are through-hole packages with identical electrical performance. Package selection depends on:

  • Printed circuit board layout constraints and available footprint space
  • Thermal management requirements and heatsink compatibility
  • Lead spacing and mechanical mounting specifications for the target application

All electrical parameters, including voltage rating, current capacity, on-state resistance, gate characteristics, and operating temperature range, are identical between the two parts. Direct electrical substitution is supported without circuit modification.

Frequently Asked Questions (FAQ)

Q: Can the IRF1010EZPBF directly replace the IRF1010EZLPBF in existing designs?

A: Electrical substitution is direct. All electrical specifications are identical. Physical board layout modification may be required due to package differences (TO-262 versus TO-220). Verify PCB footprint compatibility and heatsink mounting requirements before implementation.

Q: What is the primary difference between IRF1010EZLPBF and IRF1010EZPBF?

A: The parts are electrically identical. The IRF1010EZLPBF uses TO-262-3 Long Leads (I2PAK) packaging, while the IRF1010EZPBF uses TO-220-3 packaging. Both are through-hole configurations with different physical dimensions and lead configurations.

Q: Why is the IRF1010EZLPBF listed as Obsolete?

A: Infineon Technologies has discontinued manufacturing of the IRF1010EZLPBF. The IRF1010EZPBF remains in active production as the current equivalent offering. For new designs or ongoing production, the IRF1010EZPBF is the recommended selection.

Q: Are there thermal management differences between the two packages?

A: Both packages are rated for 140W maximum power dissipation at Tc. Thermal performance depends on heatsink design, mounting method, and board layout. TO-220 packages typically offer different heatsink compatibility compared to TO-262 packages. Consult thermal design specifications for your specific application.

Q: Do both parts meet current regulatory standards?

A: The IRF1010EZPBF carries ROHS3 Compliance certification. Both parts maintain REACH Unaffected status. For applications requiring specific environmental certifications, verify compliance documentation with your supplier.

Q: What is the base product number for these parts?

A: The base product number is IRF1010. Both IRF1010EZLPBF and IRF1010EZPBF share this common base designation, indicating they are variants of the same core MOSFET design with different packaging options.

Q: Can I use a TO-220 heatsink with the TO-262 package?

A: No. TO-262 and TO-220 packages have different mounting hole configurations and lead layouts. Heatsinks are package-specific. Verify heatsink compatibility with your selected package before procurement.

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