IRF1010EPBF N-Channel 60V 84A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF1010EPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage and 84A continuous drain current at 25°C. This device features a TO-220AB through-hole package and is part of the HEXFET® series. The IRF1010EPBF is designated as "Not For New Designs," indicating its legacy status in the product portfolio. Equivalent and substitute parts are necessary for applications requiring continued supply, design flexibility, or performance optimization within the 60V N-Channel MOSFET category.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	84	A
On-State Resistance (Rds On) @ 50A, 10V	12	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	130	nC
Power Dissipation (Max)	200	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220AB	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IRF1010EPBF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 60V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Package: Must be TO-220AB or compatible TO-220 variant
Mounting Type: Must be Through Hole

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Substitute must support the application's current requirements
On-State Resistance (Rds On): Lower values indicate improved performance; higher values require thermal management verification
Gate Charge (Qg): Affects switching speed and driver requirements
Power Dissipation: Must accommodate thermal design constraints
Operating Temperature Range: Must cover the application's temperature requirements

Substitutes are grouped into two categories:

Direct Equivalents: Parts with identical or superior electrical characteristics and active product status (IRF1010EZPBF, IRF1018EPBF, STP60NF06, STP60NF06L).

Functional Alternatives: Parts meeting core voltage and package requirements with variations in current rating, on-state resistance, or power dissipation (PSMN3R0-60PS,127, PSMN4R6-60PS,127, STP76NF75, STP80NF55-06).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Pd Max (W)	Status	Package
IRF1010EPBF	Infineon	60	84	12 @ 50A, 10V	130 @ 10V	200	Not For New Designs	TO-220AB
IRF1010EZPBF	Infineon	60	75	8.5 @ 51A, 10V	86 @ 10V	140	Active	TO-220AB
IRF1018EPBF	Infineon	60	79	8.4 @ 47A, 10V	69 @ 10V	110	Active	TO-220AB
PSMN3R0-60PS,127	Nexperia USA Inc.	60	100	3 @ 25A, 10V	130 @ 10V	306	Obsolete	TO-220AB
PSMN4R6-60PS,127	Nexperia USA Inc.	60	100	4.6 @ 25A, 10V	70.8 @ 10V	211	Obsolete	TO-220AB
STP60NF06	STMicroelectronics	60	60	16 @ 30A, 10V	73 @ 10V	110	Active	TO-220
STP60NF06L	STMicroelectronics	60	60	14 @ 30A, 10V	66 @ 4.5V	110	Active	TO-220
STP76NF75	STMicroelectronics	75	80	11 @ 40A, 10V	160 @ 10V	300	Active	TO-220
STP80NF55-06	STMicroelectronics	55	80	6.5 @ 40A, 10V	189 @ 10V	300	Active	TO-220

Engineering Selection Recommendations

For Direct Replacement (Active Product Status):

IRF1010EZPBF and IRF1018EPBF are both Infineon HEXFET® series devices with Active product status. Both maintain the 60V Vdss specification and TO-220AB package compatibility. IRF1010EZPBF provides 75A continuous drain current with improved on-state resistance (8.5 mOhm) compared to the IRF1010EPBF. IRF1018EPBF offers 79A continuous drain current with comparable on-state resistance (8.4 mOhm). Both are ROHS3 compliant and suitable for new designs.

For Enhanced Performance (Higher Current Capacity):

PSMN3R0-60PS,127 and PSMN4R6-60PS,127 (Nexperia) both support 100A continuous drain current at 60V. However, both are designated Obsolete. PSMN3R0-60PS,127 exhibits superior on-state resistance (3 mOhm) and higher power dissipation capability (306W). PSMN4R6-60PS,127 provides moderate on-state resistance (4.6 mOhm) with 211W power dissipation. These parts are suitable only for legacy system maintenance.

For STMicroelectronics Alternatives:

STP60NF06 and STP60NF06L are STripFET™ II series devices with Active status, 60V Vdss, and 60A continuous drain current. STP60NF06L features improved gate threshold voltage (1V @ 250µA) and lower maximum gate voltage (±15V) compared to STP60NF06 (4V @ 250µA, ±20V). Both are ROHS3 compliant. STP60NF06L supports extended operating temperature range (-65°C to 175°C).

For Voltage-Rated Alternatives:

STP76NF75 (75V Vdss, 80A) and STP80NF55-06 (55V Vdss, 80A) are Active STMicroelectronics devices suitable for applications where voltage rating flexibility is acceptable. STP76NF75 provides higher voltage margin; STP80NF55-06 offers lower on-state resistance (6.5 mOhm) with higher power dissipation (300W).

Compliance Status:

All listed substitutes are ROHS3 compliant, REACH unaffected, and classified as EAR99 for export control purposes.

Frequently Asked Questions (FAQ)

Q: Can IRF1010EZPBF directly replace IRF1010EPBF in existing designs?

A: IRF1010EZPBF is a direct Infineon equivalent with identical 60V Vdss rating and TO-220AB package. It supports 75A continuous drain current (versus 84A for IRF1010EPBF) with improved on-state resistance (8.5 mOhm versus 12 mOhm). Substitution is valid for applications where 75A current capacity is sufficient. IRF1010EZPBF has Active product status, making it suitable for new designs.

Q: What is the difference between STP60NF06 and STP60NF06L?

A: Both are STMicroelectronics STripFET™ II series devices with identical 60V Vdss and 60A continuous drain current ratings. STP60NF06L features lower gate threshold voltage (1V @ 250µA versus 4V @ 250µA), reduced maximum gate voltage (±15V versus ±20V), lower on-state resistance (14 mOhm versus 16 mOhm), and extended operating temperature range (-65°C to 175°C versus -55°C to 175°C). STP60NF06L is preferred for low-voltage gate drive applications and extreme temperature environments.

Q: Why are PSMN3R0-60PS,127 and PSMN4R6-60PS,127 listed as Obsolete?

A: Both Nexperia parts are designated Obsolete in the product portfolio. While inventory remains available (2,280 and 8,805 units respectively), these parts are no longer recommended for new designs. They are listed as functional alternatives for legacy system support only. Active alternatives from Infineon or STMicroelectronics are preferred for new applications.

Q: Can STP76NF75 (75V) substitute for IRF1010EPBF (60V)?

A: STP76NF75 meets the 60V minimum voltage requirement with a 75V Vdss rating, providing additional voltage margin. It supports 80A continuous drain current (comparable to IRF1010EPBF's 84A) with improved on-state resistance (11 mOhm). The TO-220 package is mechanically compatible with TO-220AB. Substitution is valid for applications where higher voltage rating does not create design conflicts. STP76NF75 has Active product status.

Q: What is the significance of Gate Charge (Qg) in substitution decisions?

A: Gate Charge affects switching speed and gate driver power requirements. IRF1010EPBF specifies 130 nC @ 10V. Lower gate charge values (IRF1018EPBF: 69 nC, STP60NF06L: 66 nC) enable faster switching and reduce driver stress. Higher gate charge values (STP76NF75: 160 nC, STP80NF55-06: 189 nC) require more robust gate drive circuits. Substitution with significantly different gate charge may require gate driver circuit verification.

Q: Are all listed substitutes ROHS3 compliant?

A: Yes. All substitute parts listed in this reference are ROHS3 compliant and REACH unaffected. All are classified as EAR99 for export control purposes. Compliance certifications are identical across all parts.

Q: What thermal considerations apply when substituting with lower Rds On devices?

A: Lower on-state resistance (Rds On) reduces conduction losses and heat generation. PSMN3R0-60PS,127 (3 mOhm) generates significantly less heat than IRF1010EPBF (12 mOhm). However, lower Rds On typically correlates with higher input capacitance and gate charge, potentially increasing switching losses. Thermal design must account for both conduction and switching losses. Power dissipation ratings provided in the parameter table reflect maximum thermal capability under specified conditions.

Q: Is the TO-220 package fully compatible with TO-220AB?

A: TO-220 and TO-220AB are mechanically and electrically compatible for through-hole mounting applications. Both feature three leads (Gate, Drain, Source) with identical pin spacing and mounting hole patterns. Substitution between TO-220 and TO-220AB variants does not require PCB redesign. All listed STMicroelectronics parts use TO-220 packaging, which is compatible with TO-220AB footprints.

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