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IR2184SPBF Half-Bridge Gate Driver IC Equivalent & Substitute Parts
Part Overview
The IR2184SPBF is a half-bridge gate driver IC manufactured by Infineon Technologies, designed for driving IGBT and N-Channel MOSFET configurations in power management applications. This device operates with a supply voltage range of 10V to 20V and features non-inverting input logic with a maximum bootstrap voltage of 600V.
The IR2184SPBF carries a "Not For New Designs" product status, indicating that Infineon has discontinued active development and support for this component. This status necessitates identifying functionally equivalent substitute parts that maintain compatibility with existing circuit designs while offering improved availability or enhanced performance characteristics.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Voltage - Supply | 10V ~ 20V |
| Logic Voltage - VIL, VIH | 0.8V, 2.7V |
| Current - Peak Output (Source, Sink) | 1.9A, 2.3A |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 600V |
| Rise / Fall Time (Typ) | 40ns, 20ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| RoHS Status | ROHS3 Compliant |
Substitute Part Grouping Explanation
Substitution of the IR2184SPBF is determined by strict equivalence across the following critical parameters:
- Driven Configuration: Must be Half-Bridge topology
- Number of Drivers: Must be 2 channels
- Gate Type: Must support IGBT and N-Channel MOSFET switching
- Supply Voltage Range: Must accommodate 10V ~ 20V operation
- Input Logic Type: Must be Non-Inverting
- Bootstrap Voltage Rating: Must support minimum 600V
- Package Form Factor: Must be 8-SOIC with 0.154" (3.90mm) width for PCB compatibility
- Mounting Technology: Must be Surface Mount
The FAN73932MX from onsemi meets all these core substitution criteria, maintaining functional and mechanical compatibility while offering enhanced electrical performance in specific parameters.
Parameter Comparison
| Parameter | IR2184SPBF (Infineon) | FAN73932MX (onsemi) | Compatibility |
|---|---|---|---|
| Driven Configuration | Half-Bridge | Half-Bridge | Equivalent |
| Number of Drivers | 2 | 2 | Equivalent |
| Gate Type | IGBT, N-Channel MOSFET | IGBT, N-Channel MOSFET | Equivalent |
| Voltage - Supply | 10V ~ 20V | 10V ~ 20V | Equivalent |
| Logic Voltage - VIL, VIH | 0.8V, 2.7V | 0.8V, 2.5V | Compatible (VIH difference within logic margin) |
| Current - Peak Output (Source, Sink) | 1.9A, 2.3A | 2.5A, 2.5A | Enhanced (FAN73932MX provides higher drive capability) |
| Input Type | Non-Inverting | Non-Inverting | Equivalent |
| High Side Voltage - Max (Bootstrap) | 600V | 600V | Equivalent |
| Rise / Fall Time (Typ) | 40ns, 20ns | 25ns, 20ns | Enhanced (FAN73932MX offers faster rise time) |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | Equivalent |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | Equivalent (pin-compatible) |
| Mounting Type | Surface Mount | Surface Mount | Equivalent |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | Equivalent |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) | 1 (Unlimited) | Enhanced (FAN73932MX offers superior moisture tolerance) |
Engineering Selection Recommendations
The FAN73932MX qualifies as a direct functional substitute for the IR2184SPBF based on equivalence across all critical electrical and mechanical parameters. Both devices maintain ROHS3 compliance and operate within identical supply voltage and temperature ranges.
The FAN73932MX demonstrates performance enhancements in three areas: peak output current capability (2.5A vs. 1.9A source, 2.5A vs. 2.3A sink), rise time performance (25ns vs. 40ns), and moisture sensitivity rating (MSL 1 vs. MSL 2). These improvements provide design margin without introducing incompatibility.
The IR2184SPBF carries "Not For New Designs" status, while the FAN73932MX is marked "Obsolete." For applications requiring active manufacturer support and long-term availability, further evaluation of current-generation half-bridge gate driver alternatives may be warranted. However, for direct replacement in existing designs, the FAN73932MX maintains full functional and mechanical compatibility.
Frequently Asked Questions (FAQ)
Q: Can the FAN73932MX be used as a direct pin-for-pin replacement for the IR2184SPBF?
A: Yes. Both devices use the 8-SOIC package with identical 0.154" (3.90mm) width and surface mount configuration. Pin compatibility is maintained for half-bridge gate driver applications.
Q: What is the significance of the logic voltage difference (VIH 2.7V vs. 2.5V)?
A: The FAN73932MX has a lower VIH threshold (2.5V) compared to the IR2184SPBF (2.7V). This represents enhanced input sensitivity and remains compatible with standard logic signal levels (3.3V, 5V) used in control circuits. The difference does not create incompatibility in typical applications.
Q: Does the higher peak output current of the FAN73932MX affect circuit design?
A: The FAN73932MX provides 2.5A peak output current versus the IR2184SPBF's 1.9A source and 2.3A sink. This enhanced drive capability is backward-compatible and provides additional design margin for gate charge delivery without requiring circuit modifications.
Q: What does the MSL rating difference mean for storage and handling?
A: The IR2184SPBF has MSL 2 (1 Year shelf life), while the FAN73932MX has MSL 1 (Unlimited shelf life). MSL 1 indicates superior moisture resistance and eliminates time-based storage constraints, reducing inventory management complexity.
Q: Are both devices suitable for IGBT and N-Channel MOSFET applications?
A: Yes. Both the IR2184SPBF and FAN73932MX are specified for driving IGBT and N-Channel MOSFET gate circuits with identical 600V bootstrap voltage rating and non-inverting input logic.
Q: What is the impact of the 15ns faster rise time in the FAN73932MX?
A: The FAN73932MX rise time of 25ns versus the IR2184SPBF's 40ns represents improved switching edge control. This faster transition reduces switching losses and electromagnetic noise in power conversion circuits while maintaining compatibility with existing designs.
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