IR21814STR Half-Bridge Gate Driver IC Equivalent & Substitute Parts

Part Overview

The IR21814STR is a half-bridge gate driver IC manufactured by Infineon Technologies, designed for driving IGBT and N-Channel MOSFET configurations in power management applications. This device operates with a supply voltage range of 10V to 20V and provides independent dual-channel gate driving with non-inverting input logic.

The IR21814STR is classified as obsolete product status. Identifying equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and support long-term production requirements for applications utilizing this gate driver topology.

Substiute Parts

IR21814STR

Infineon TechnologiesIn Stock: 881IR21814STR Datasheet

Current PartRFQ

IR21814STRPBF

Infineon TechnologiesIn Stock: 16449IR21814STRPBF Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IR21814STR is determined by strict equivalence across the following critical parameters:

• Driven Configuration: Half-Bridge topology
• Channel Type: Independent dual channels
• Number of Drivers: 2 channels
• Gate Type: IGBT and N-Channel MOSFET compatibility
• Voltage - Supply: 10V ~ 20V operating range
• Logic Voltage Thresholds: VIL 0.8V, VIH 2.7V
• Current - Peak Output: Source 1.9A, Sink 2.3A
• Input Type: Non-Inverting logic
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 40ns rise, 20ns fall
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 14-SOIC form factor

The IR21814STRPBF meets all substitution criteria as a direct functional equivalent with identical electrical specifications and package configuration.

Parameter Comparison

Engineering Selection Recommendations

The IR21814STRPBF is the direct substitute for the obsolete IR21814STR. Both parts share identical electrical specifications, gate driver topology, and 14-SOIC package configuration, ensuring pin-for-pin compatibility and functional equivalence in half-bridge gate driving applications.

The IR21814STRPBF offers additional advantages for new designs and ongoing production:

• Active Product Status: Ensures long-term availability and manufacturing support from Infineon Technologies
• RoHS3 Compliance: Meets current environmental and regulatory requirements for electronic components
• Improved Moisture Sensitivity: MSL 3 rating provides adequate protection for standard manufacturing and storage conditions

Both parts maintain identical REACH and ECCN classifications, confirming regulatory equivalence for export and supply chain purposes.

Frequently Asked Questions (FAQ)

Q: Can IR21814STRPBF be used as a direct replacement for IR21814STR in existing designs?

A: Yes. The IR21814STRPBF is a direct functional equivalent with identical electrical specifications, gate driver configuration, and 14-SOIC package pinout. No circuit modifications are required for substitution.

Q: What is the difference between IR21814STR and IR21814STRPBF?

A: The primary differences are product status and compliance certifications. The IR21814STR is obsolete and RoHS non-compliant, while the IR21814STRPBF is an active product with ROHS3 compliance. Electrical performance and package configuration are identical.

Q: Are there any thermal or operating condition differences between these parts?

A: No. Both parts operate across the identical temperature range of -40°C to 150°C (TJ) and share the same supply voltage range (10V ~ 20V), output current ratings (1.9A source, 2.3A sink), and timing characteristics (40ns rise, 20ns fall).

Q: Does the moisture sensitivity level difference affect compatibility?

A: The MSL difference (1 vs. 3) reflects storage and handling requirements but does not affect electrical performance or circuit compatibility. MSL 3 is standard for modern surface-mount components and is suitable for typical manufacturing environments.

Q: Are both parts suitable for IGBT and N-Channel MOSFET gate driving applications?

A: Yes. Both IR21814STR and IR21814STRPBF support independent dual-channel gate driving for IGBT and N-Channel MOSFET configurations with 600V maximum bootstrap voltage and non-inverting input logic.