IR2136SPBF Half-Bridge Gate Driver IC Equivalent & Substitute Parts

Part Overview

The IR2136SPBF is a half-bridge gate driver IC manufactured by Infineon Technologies, designed for driving IGBT and N-Channel MOSFET configurations in 3-phase applications. This device operates with a supply voltage range of 10V to 20V and provides peak output currents of 200mA (source) and 350mA (sink), with a maximum bootstrap voltage rating of 600V.

The IR2136SPBF carries a "Not For New Designs" product status, indicating that Infineon has transitioned this component away from active development. This status necessitates identifying functionally equivalent alternatives for new design implementations while maintaining electrical and mechanical compatibility with existing applications.

Substiute Parts

IR2136SPBF
Infineon TechnologiesIn Stock: 6100IR2136SPBF Datasheet
IR2136SPBF
Current Part
IR2136STRPBF
Infineon TechnologiesIn Stock: 25322IR2136STRPBF Datasheet
IR2136STRPBF
MFR Recommended

Key Parameters

Parameter Value
Manufacturer Infineon Technologies
Part Number IR2136SPBF
Category Power Management (PMIC)
Driven Configuration Half-Bridge
Channel Type 3-Phase
Number of Drivers 6
Gate Type IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 3V
Current - Peak Output (Source, Sink) 200mA, 350mA
Input Type Inverting
High Side Voltage - Max (Bootstrap) 600V
Rise / Fall Time (Typ) 125ns, 50ns
Operating Temperature -40°C ~ 150°C (TJ)
Package / Case 28-SOIC (0.295", 7.50mm Width)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)

Substitute Part Grouping Explanation

Substitution of the IR2136SPBF is determined by strict equivalence across the following critical parameters:

  • Driven Configuration: Half-Bridge topology
  • Channel Type: 3-Phase operation
  • Number of Drivers: 6 drivers
  • Gate Type: IGBT and N-Channel MOSFET compatibility
  • Voltage - Supply: 10V ~ 20V operating range
  • Logic Voltage Levels: VIL 0.8V, VIH 3V
  • Current - Peak Output: 200mA source, 350mA sink
  • Input Type: Inverting logic
  • High Side Voltage - Max (Bootstrap): 600V
  • Package / Case: 28-SOIC form factor
  • Operating Temperature Range: -40°C ~ 150°C (TJ)

Only components matching all these parameters across electrical specifications and mechanical packaging are classified as direct substitutes.

Parameter Comparison

Parameter IR2136SPBF (Main Part) IR2136STRPBF (Substitute)
Manufacturer Infineon Technologies Infineon Technologies
Base Product Number IR2136 IR2136
Category Power Management (PMIC) Power Management (PMIC)
Driven Configuration Half-Bridge Half-Bridge
Channel Type 3-Phase 3-Phase
Number of Drivers 6 6
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 3V 0.8V, 3V
Current - Peak Output (Source, Sink) 200mA, 350mA 200mA, 350mA
Input Type Inverting Inverting
High Side Voltage - Max (Bootstrap) 600V 600V
Rise / Fall Time (Typ) 125ns, 50ns 125ns, 50ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Package / Case 28-SOIC (0.295", 7.50mm Width) 28-SOIC (0.295", 7.50mm Width)
Mounting Type Surface Mount Surface Mount
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours) 3 (168 Hours)
Product Status Not For New Designs Active
Packaging Format Tube Cut Tape (CT) & Digi-Reel®

Engineering Selection Recommendations

The IR2136STRPBF is the manufacturer-recommended substitute for the IR2136SPBF. Both components are manufactured by Infineon Technologies and share identical electrical specifications and mechanical packaging.

The primary distinction between these parts is product lifecycle status and packaging format. The IR2136SPBF is designated "Not For New Designs," while the IR2136STRPBF maintains "Active" product status. This status difference reflects Infineon's ongoing support and availability commitment for the IR2136STRPBF.

Both parts maintain ROHS3 compliance and identical MSL ratings, ensuring regulatory and environmental compatibility. The packaging difference—Tube format for IR2136SPBF versus Cut Tape and Digi-Reel format for IR2136STRPBF—reflects standard distribution practices and does not affect electrical or mechanical performance in circuit applications.

For new design implementations, the IR2136STRPBF is the appropriate selection due to its active product status and assured long-term availability.

Frequently Asked Questions (FAQ)

Q: Are IR2136SPBF and IR2136STRPBF electrically identical?

A: Yes. Both components share identical electrical specifications including supply voltage range (10V ~ 20V), output current ratings (200mA source, 350mA sink), bootstrap voltage rating (600V), and timing characteristics (125ns rise time, 50ns fall time).

Q: What is the significance of the "Not For New Designs" status on the IR2136SPBF?

A: This designation indicates that Infineon has concluded active development and marketing of this component variant. New design implementations should utilize the IR2136STRPBF, which carries "Active" product status and ensures continued manufacturer support and availability.

Q: Can IR2136SPBF and IR2136STRPBF be used interchangeably in existing applications?

A: Yes. Identical electrical specifications, pin configurations, and package dimensions (28-SOIC) enable direct substitution in existing circuit designs without modification.

Q: What is the difference between Tube and Cut Tape packaging formats?

A: Tube packaging contains components in a plastic tube suitable for manual handling and smaller quantity orders. Cut Tape and Digi-Reel packaging provides components on continuous tape for automated assembly processes. Both formats contain identical components; packaging format selection depends on manufacturing process requirements.

Q: Are both parts RoHS compliant?

A: Yes. Both IR2136SPBF and IR2136STRPBF are ROHS3 compliant and carry identical Moisture Sensitivity Level (MSL) ratings of 3 (168 Hours).

Q: What applications are these gate driver ICs suitable for?

A: These components are designed for 3-phase half-bridge gate driving applications requiring IGBT or N-Channel MOSFET control, including motor drives, power inverters, and similar power conversion circuits operating within the specified voltage and current parameters.

Request Quote (Ships tomorrow)