IR2132PBF Equivalent & Substitute Parts

Part Overview

The IR2132PBF is a half-bridge gate driver IC manufactured by Infineon Technologies, designed for driving IGBT and N-Channel MOSFET configurations in 3-phase applications. The device operates with a supply voltage range of 10V to 20V and provides peak output currents of 250mA (source) and 500mA (sink). The IR2132PBF is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing system support and new design implementations.

Substiute Parts

IR2132PBF
Infineon TechnologiesIn Stock: 1819IR2132PBF Datasheet
IR2132PBF
Current Part
IR2132STRPBF
Infineon TechnologiesIn Stock: 1334IR2132STRPBF Datasheet
IR2132STRPBF
MFR Recommended

Key Parameters

Parameter Value
Manufacturer Infineon Technologies
Category Power Management (PMIC)
Base Product Number IR2132
Driven Configuration Half-Bridge
Channel Type 3-Phase
Number of Drivers 6
Gate Type IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.2V
Current - Peak Output (Source, Sink) 250mA, 500mA
Input Type Inverting
High Side Voltage - Max (Bootstrap) 600V
Rise / Fall Time (Typ) 80ns, 35ns
Operating Temperature -40°C ~ 150°C (TJ)
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected

Substitute Part Grouping Explanation

Substitution of the IR2132PBF is determined by electrical and mechanical parameter equivalence within the IR2132 product family. The primary substitution criterion is functional compatibility across the following parameters:

  • Driven configuration (half-bridge topology)
  • Channel type (3-phase operation)
  • Number of drivers (6 channels)
  • Gate type compatibility (IGBT and N-Channel MOSFET)
  • Supply voltage range (10V ~ 20V)
  • Logic voltage thresholds (VIL 0.8V, VIH 2.2V)
  • Peak output current specifications (250mA source, 500mA sink)
  • Input type (inverting)
  • Bootstrap voltage rating (600V maximum)
  • Timing characteristics (rise/fall times)
  • Operating temperature range (-40°C ~ 150°C)
  • Regulatory compliance (RoHS3, REACH)

The IR2132STRPBF maintains identical electrical specifications while differing only in packaging format and product status classification.

Parameter Comparison

Parameter IR2132PBF IR2132STRPBF
Manufacturer Infineon Technologies Infineon Technologies
Base Product Number IR2132 IR2132
Driven Configuration Half-Bridge Half-Bridge
Channel Type 3-Phase 3-Phase
Number of Drivers 6 6
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.2V 0.8V, 2.2V
Current - Peak Output (Source, Sink) 250mA, 500mA 250mA, 500mA
Input Type Inverting Inverting
High Side Voltage - Max (Bootstrap) 600V 600V
Rise / Fall Time (Typ) 80ns, 35ns 80ns, 35ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Package / Case 28-DIP (0.600", 15.24mm) 28-SOIC (0.295", 7.50mm Width)
Product Status Obsolete Active
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 3 (168 Hours)
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

The IR2132STRPBF is the active-status equivalent to the obsolete IR2132PBF. Both devices share identical electrical specifications and functional characteristics, ensuring direct substitution capability at the circuit level. The IR2132STRPBF is currently in active production status, providing long-term availability and supply chain continuity.

The primary distinction between these parts is packaging format: the IR2132PBF uses through-hole 28-DIP mounting, while the IR2132STRPBF employs surface-mount 28-SOIC technology. This packaging difference requires corresponding changes to PCB layout and assembly processes but does not affect electrical performance or functional compatibility.

Both devices maintain ROHS3 compliance and REACH unaffected status, satisfying regulatory requirements for industrial and commercial applications. The IR2132STRPBF's MSL rating of 3 (168 hours) requires standard moisture control during storage and handling, consistent with surface-mount component practices.

Frequently Asked Questions (FAQ)

Q: Can the IR2132STRPBF directly replace the IR2132PBF in existing designs?

A: Electrical substitution is direct. The devices are functionally identical across all specified parameters. PCB layout modification is required due to packaging format differences (through-hole DIP versus surface-mount SOIC).

Q: What are the key differences between these parts?

A: The IR2132PBF and IR2132STRPBF differ in mounting technology (through-hole versus surface-mount), package dimensions, and product status (obsolete versus active). All electrical and functional specifications are identical.

Q: Is the IR2132STRPBF suitable for new designs?

A: Yes. The IR2132STRPBF is classified as active product status and is recommended for new designs requiring half-bridge gate driver functionality with 3-phase IGBT or N-Channel MOSFET control.

Q: What packaging considerations apply to the IR2132STRPBF?

A: The IR2132STRPBF uses 28-SOIC surface-mount packaging with MSL rating of 3 (168 hours). Standard moisture control procedures apply during storage and handling prior to reflow soldering.

Q: Are there any compliance differences between these parts?

A: Both devices maintain ROHS3 compliance and REACH unaffected status. No compliance differences exist between the IR2132PBF and IR2132STRPBF.

Q: What is the bootstrap voltage rating for these devices?

A: Both the IR2132PBF and IR2132STRPBF support a maximum bootstrap voltage of 600V, suitable for high-voltage gate drive applications.

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