IR2127STR Gate Driver IC - Equivalent & Substitute Parts

Part Overview

The IR2127STR is a high-side or low-side gate driver IC manufactured by Infineon Technologies, designed for driving IGBT and N-Channel MOSFET gates in power management applications. This component operates with a supply voltage range of 12V to 20V and features non-inverting logic configuration in an 8-SOIC surface mount package.

The IR2127STR is classified as obsolete. Identifying equivalent substitute parts is necessary to maintain design continuity, ensure supply chain reliability, and support ongoing production requirements for applications utilizing this gate driver topology.

Key Parameters

Parameter	Value
Manufacturer	Infineon Technologies
Category	Power Management (PMIC)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Driven Configuration	High-Side or Low-Side
Channel Type	Single
Number of Drivers	1
Gate Type	IGBT, N-Channel MOSFET
Voltage - Supply	12V ~ 20V
Logic Voltage - VIL, VIH	0.8V, 3V
Current - Peak Output (Source, Sink)	250mA, 500mA
Input Type	Non-Inverting
High Side Voltage - Max (Bootstrap)	600 V
Rise / Fall Time (Typ)	80ns, 40ns
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitution eligibility for the IR2127STR is determined by strict equivalence across the following critical parameters:

Driven configuration (high-side or low-side capability)
Channel type and number of drivers (single channel)
Gate type compatibility (IGBT, N-Channel MOSFET)
Supply voltage range (12V ~ 20V)
Logic voltage thresholds (VIL 0.8V, VIH 3V)
Peak output current specifications (source 250mA, sink 500mA)
Input logic type (non-inverting)
Bootstrap voltage rating (600V maximum)
Timing characteristics (rise/fall times)
Operating temperature range (-40°C ~ 150°C)
Package form factor (8-SOIC)

Parts meeting all these criteria are classified as direct functional equivalents and may be substituted without circuit redesign.

Parameter Comparison

Parameter	IR2127STR (Main Part)	IR2127STRPBF (Substitute)
Manufacturer	Infineon Technologies	Infineon Technologies
Base Product Number	IR2127	IR2127
Package / Case	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)
Driven Configuration	High-Side or Low-Side	High-Side or Low-Side
Channel Type	Single	Single
Number of Drivers	1	1
Gate Type	IGBT, N-Channel MOSFET	IGBT, N-Channel MOSFET
Voltage - Supply	12V ~ 20V	12V ~ 20V
Logic Voltage - VIL, VIH	0.8V, 3V	0.8V, 3V
Current - Peak Output (Source, Sink)	250mA, 500mA	250mA, 500mA
Input Type	Non-Inverting	Non-Inverting
High Side Voltage - Max (Bootstrap)	600 V	600 V
Rise / Fall Time (Typ)	80ns, 40ns	80ns, 40ns
Operating Temperature	-40°C ~ 150°C (TJ)	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Product Status	Obsolete	Active
RoHS Status	RoHS non-compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	2 (1 Year)
REACH Status	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

The IR2127STRPBF is a direct functional equivalent to the IR2127STR across all electrical and mechanical parameters. Both parts share identical base product designation (IR2127) and are manufactured by Infineon Technologies.

The primary distinction between these parts is product lifecycle status and regulatory compliance. The IR2127STR is classified as obsolete, while the IR2127STRPBF maintains active product status. The IR2127STRPBF achieves ROHS3 compliance, whereas the IR2127STR is RoHS non-compliant. Both parts maintain REACH Unaffected status.

For new designs or ongoing production requiring gate driver functionality equivalent to the IR2127STR, the IR2127STRPBF is the appropriate selection. This part provides identical electrical performance, identical package form factor, and superior supply chain availability due to active manufacturing status.

Frequently Asked Questions (FAQ)

Q: Can IR2127STRPBF be used as a direct replacement for IR2127STR in existing designs?

A: Yes. Both parts are manufactured by Infineon Technologies and share identical electrical specifications, logic thresholds, output current ratings, timing characteristics, and package dimensions. No circuit modifications are required for substitution.

Q: What is the difference between IR2127STR and IR2127STRPBF?

A: The parts are electrically and mechanically identical. The primary differences are product status (IR2127STR is obsolete; IR2127STRPBF is active) and RoHS compliance (IR2127STR is non-compliant; IR2127STRPBF is ROHS3 compliant). The IR2127STRPBF also has a moisture sensitivity level of 2 (1 Year) compared to MSL 1 (Unlimited) for the IR2127STR.

Q: Are there any package or pinout differences between these parts?

A: No. Both parts use the 8-SOIC package with identical dimensions (0.154" width, 3.90mm). Pinout and footprint are identical.

Q: What supply voltage range does this gate driver support?

A: The supply voltage range is 12V to 20V for both the IR2127STR and IR2127STRPBF.

Q: What is the maximum bootstrap voltage rating?

A: The maximum high-side bootstrap voltage is 600V for both parts.

Q: What gate types can these drivers control?

A: Both parts are designed to drive IGBT and N-Channel MOSFET gates in high-side or low-side configurations.

Q: What is the peak output current capability?

A: Source current is 250mA and sink current is 500mA for both parts.

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