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IR21271STR Gate Driver IC - Equivalent & Substitute Parts
Part Overview
The IR21271STR is a high-side or low-side gate driver IC manufactured by Infineon Technologies, designed for driving IGBT and N-Channel MOSFET gates in power management applications. The device operates with a supply voltage range of 9V to 20V and delivers peak output currents of 250mA (source) and 500mA (sink). Currently classified as obsolete, the IR21271STR requires identification of suitable substitute components to maintain design continuity and ensure component availability for new production runs and field replacements.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Driven Configuration | High-Side or Low-Side |
| Channel Type | Single |
| Number of Drivers | 1 |
| Gate Type | IGBT, N-Channel MOSFET |
| Voltage - Supply | 9V ~ 20V |
| Logic Voltage - VIL, VIH | 0.8V, 3V |
| Current - Peak Output (Source, Sink) | 250mA, 500mA |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 600V |
| Rise / Fall Time (Typ) | 80ns, 40ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
Substitute Part Grouping Explanation
Substitute parts for the IR21271STR are identified based on electrical and mechanical compatibility within the gate driver IC category. The critical parameters determining substitution eligibility are:
Primary Compatibility Criteria:
- Package type: 8-SOIC form factor (0.154", 3.90mm Width)
- Supply voltage range: 9V ~ 20V minimum overlap
- Peak output current capability: 250mA source / 500mA sink minimum
- Bootstrap voltage rating: 600V minimum
- Input logic type: Non-Inverting configuration
- Gate type support: IGBT and N-Channel MOSFET compatibility
Substitution Categories:
Category 1 - Direct Equivalent (Same Driven Configuration): IR21271STRPBF represents a direct functional equivalent with identical electrical specifications and the same high-side or low-side driven configuration. This substitute maintains single-channel architecture and is the preferred replacement for direct pin-compatible applications.
Category 2 - Functional Alternative (Different Driven Configuration): NCP5104DR2G operates as a functional alternative with different driven configuration (half-bridge vs. high-side or low-side) and dual-channel architecture (2 drivers vs. 1 driver). While electrical parameters remain compatible within specified ranges, the architectural differences require circuit-level evaluation for suitability.
Parameter Comparison
| Parameter | IR21271STR | IR21271STRPBF | NCP5104DR2G |
|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | onsemi |
| Product Status | Obsolete | Active | Active |
| Driven Configuration | High-Side or Low-Side | High-Side or Low-Side | Half-Bridge |
| Channel Type | Single | Single | Synchronous |
| Number of Drivers | 1 | 1 | 2 |
| Gate Type | IGBT, N-Channel MOSFET | IGBT, N-Channel MOSFET | IGBT, N-Channel MOSFET |
| Voltage - Supply | 9V ~ 20V | 9V ~ 20V | 10V ~ 20V |
| Logic Voltage - VIL, VIH | 0.8V, 3V | 0.8V, 3V | 0.8V, 2.3V |
| Current - Peak Output (Source, Sink) | 250mA, 500mA | 250mA, 500mA | 250mA, 500mA |
| Input Type | Non-Inverting | Non-Inverting | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 600V | 600V | 600V |
| Rise / Fall Time (Typ) | 80ns, 40ns | 80ns, 40ns | 85ns, 35ns |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 125°C (TJ) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| RoHS Status | RoHS non-compliant | ROHS3 Compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 2 (1 Year) | 1 (Unlimited) |
Engineering Selection Recommendations
IR21271STRPBF (Infineon Technologies): This substitute is the primary recommendation for direct replacement of the obsolete IR21271STR. Both devices share identical electrical specifications, driven configuration, and single-channel architecture. IR21271STRPBF maintains active product status with ROHS3 compliance and significantly higher inventory availability (53,265 units in stock). The device is suitable for applications requiring pin-compatible substitution without circuit modification. Moisture sensitivity level increases from MSL 1 to MSL 2, requiring standard handling procedures during storage and assembly.
NCP5104DR2G (onsemi): This substitute is applicable for applications where half-bridge driven configuration and dual-channel architecture are compatible with the original circuit design. The NCP5104DR2G maintains electrical parameter compatibility within specified ranges and offers active product status with ROHS3 compliance. The device features slightly faster fall time (35ns vs. 40ns) and marginally higher rise time (85ns vs. 80ns). Operating temperature range is reduced to -40°C ~ 125°C (TJ), which may be limiting for high-temperature applications. This substitute requires circuit-level evaluation to confirm compatibility with half-bridge topology and dual-driver configuration.
Frequently Asked Questions (FAQ)
Q: Can IR21271STRPBF be used as a direct replacement for IR21271STR without circuit modification?
A: Yes. IR21271STRPBF is a direct functional equivalent with identical electrical specifications, driven configuration (high-side or low-side), single-channel architecture, and 8-SOIC package. No circuit modification is required for pin-compatible substitution. Standard handling procedures for MSL 2 components should be observed during storage and assembly.
Q: What are the key differences between IR21271STRPBF and NCP5104DR2G?
A: The primary differences are driven configuration and channel count. IR21271STRPBF maintains high-side or low-side single-channel architecture identical to the original IR21271STR. NCP5104DR2G operates as a half-bridge driver with dual-channel (synchronous) architecture, requiring two drivers instead of one. Both devices share the same 8-SOIC package and compatible electrical parameters. Circuit topology compatibility must be verified before selecting NCP5104DR2G.
Q: Are both substitute parts available in the same packaging options?
A: Both IR21271STRPBF and NCP5104DR2G are available in Cut Tape (CT) and Digi-Reel® packaging. Both use the 8-SOIC (0.154", 3.90mm Width) package form factor, ensuring mechanical compatibility with existing PCB designs.
Q: What is the impact of the reduced operating temperature range in NCP5104DR2G?
A: NCP5104DR2G operates over -40°C ~ 125°C (TJ), compared to -40°C ~ 150°C (TJ) for IR21271STR and IR21271STRPBF. Applications requiring operation above 125°C junction temperature cannot use NCP5104DR2G. Verify maximum junction temperature requirements in your thermal design before selecting this substitute.
Q: How do the logic voltage thresholds compare between substitutes?
A: IR21271STR and IR21271STRPBF share identical logic voltage specifications (VIL = 0.8V, VIH = 3V). NCP5104DR2G has a lower VIH threshold of 2.3V. This difference may affect input signal compatibility in applications with marginal logic voltage levels. Verify input signal levels against the selected device's specifications.
Q: What compliance certifications should be considered when selecting a substitute?
A: IR21271STR is RoHS non-compliant. Both IR21271STRPBF and NCP5104DR2G are ROHS3 compliant, meeting current environmental regulations. All three devices are REACH Unaffected and classified as EAR99 for export control purposes. Select ROHS3-compliant substitutes for new designs and applications subject to environmental compliance requirements.
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