IR2125S High-Side Gate Driver IC Equivalent & Substitute Parts

Part Overview

The IR2125S is a high-side gate driver IC manufactured by Infineon Technologies, designed for driving IGBT and N-Channel MOSFET applications. This non-inverting single-channel driver operates with a supply voltage range of 0V to 18V and supports bootstrap voltages up to 500V, making it suitable for power conversion and motor control applications.

The IR2125S is classified as obsolete. Identifying equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and support ongoing production or maintenance of systems utilizing this component.

Substiute Parts

IR2125S
Infineon TechnologiesIn Stock: 1114IR2125S Datasheet
IR2125S
Current Part
IR2125SPBF
International RectifierIn Stock: 1316IR2125SPBF Datasheet
IR2125SPBF
Direct

Key Parameters

Parameter Value
Driven Configuration High-Side
Channel Type Single
Number of Drivers 1
Gate Type IGBT, N-Channel MOSFET
Voltage - Supply 0V ~ 18V
Logic Voltage - VIL, VIH 0.8V, 2.2V
Current - Peak Output (Source, Sink) 1.6A, 3.3A
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 500V
Rise / Fall Time (Typ) 43ns, 26ns
Operating Temperature -40°C ~ 150°C (TJ)
Package / Case 16-SOIC (0.295", 7.50mm Width)
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution of the IR2125S is determined by strict equivalence across the following critical parameters:

  • Driven Configuration: High-Side operation only
  • Channel Architecture: Single-channel driver
  • Gate Type Compatibility: IGBT and N-Channel MOSFET support
  • Supply Voltage Range: 0V to 18V
  • Logic Threshold Levels: VIL 0.8V, VIH 2.2V
  • Output Current Specifications: Source 1.6A, Sink 3.3A
  • Input Logic: Non-Inverting
  • Bootstrap Voltage Rating: 500V maximum
  • Switching Performance: Rise time 43ns, Fall time 26ns
  • Package Format: 16-SOIC surface mount
  • Temperature Range: -40°C to 150°C junction temperature

Only parts meeting all these parameters qualify as direct substitutes for the IR2125S.

Parameter Comparison

Parameter IR2125S (Main Part) IR2125SPBF (Substitute)
Manufacturer Infineon Technologies International Rectifier
Product Status Obsolete Active
Driven Configuration High-Side High-Side
Channel Type Single Single
Number of Drivers 1 1
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 0V ~ 18V 0V ~ 18V
Logic Voltage - VIL, VIH 0.8V, 2.2V 0.8V, 2.2V
Current - Peak Output (Source, Sink) 1.6A, 3.3A 1.6A, 3.3A
Input Type Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 500V 500V
Rise / Fall Time (Typ) 43ns, 26ns 43ns, 26ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Package / Case 16-SOIC (0.295", 7.50mm Width) 16-SOIC (0.295", 7.50mm Width)
Mounting Type Surface Mount Surface Mount
Base Product Number IR2125 IR2125
ECCN EAR99 EAR99
HTSUS 8542.39.0001 8542.39.0001

Engineering Selection Recommendations

The IR2125SPBF is a direct functional equivalent to the IR2125S. Both parts share identical electrical specifications, package format, and operational characteristics. The primary distinction is product status: the IR2125S is obsolete, while the IR2125SPBF maintains active production status.

For new designs or ongoing production requiring high-side gate driver functionality, the IR2125SPBF is the appropriate selection. Both parts carry identical export control classifications (ECCN EAR99) and tariff codes (HTSUS 8542.39.0001), ensuring regulatory consistency in supply chain applications.

Frequently Asked Questions (FAQ)

Q: Can IR2125SPBF replace IR2125S in existing designs? A: Yes. The IR2125SPBF is electrically and mechanically identical to the IR2125S. Pin configuration, package footprint, and all electrical parameters are equivalent, enabling direct substitution without circuit modification.

Q: What is the difference between IR2125S and IR2125SPBF? A: The primary difference is manufacturer designation and product status. IR2125S is obsolete; IR2125SPBF is in active production. Both are manufactured to the same IR2125 base product specification with identical performance characteristics.

Q: Are there any packaging differences between these parts? A: No. Both parts use 16-SOIC surface mount packaging with 0.295" (7.50mm) width. PCB footprints and assembly processes are identical.

Q: What supply voltage range does this gate driver support? A: The IR2125S and IR2125SPBF operate with supply voltages from 0V to 18V, with bootstrap voltage capability up to 500V for high-side switching applications.

Q: What gate types can this driver control? A: This driver is designed for IGBT and N-Channel MOSFET gate control in high-side configurations.

Q: What is the output current capability? A: Peak output current is 1.6A source and 3.3A sink, supporting typical gate drive requirements for power conversion applications.

Q: Does this driver invert the input signal? A: No. The IR2125S and IR2125SPBF are non-inverting drivers. The output logic state matches the input logic state.

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