IR2113 Half-Bridge Gate Driver IC - Equivalent & Substitute Parts

Part Overview

The IR2113 is a half-bridge gate driver IC manufactured by Infineon Technologies, designed to drive IGBT and N-Channel MOSFET devices in half-bridge configurations. This device operates with independent channels and provides non-inverting logic inputs. The IR2113 is classified as obsolete, making identification of suitable substitute parts essential for ongoing production and maintenance applications. The obsolete status necessitates evaluation of compatible alternatives that maintain electrical and mechanical compatibility with existing designs.

Substiute Parts

IR2113
Infineon TechnologiesIn Stock: 1322IR2113 Datasheet
IR2113
Current Part
IR2113PBF
Infineon TechnologiesIn Stock: 2101IR2113PBF Datasheet
IR2113PBF
Direct

Key Parameters

Parameter Value
Driven Configuration Half-Bridge
Number of Drivers 2
Gate Type IGBT, N-Channel MOSFET
Voltage - Supply 3.3V ~ 20V
Logic Voltage - VIL, VIH 6V, 9.5V
Current - Peak Output (Source, Sink) 2A, 2A
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 600 V
Rise / Fall Time (Typ) 25ns, 17ns
Operating Temperature -40°C ~ 150°C (TJ)
Package / Case 14-DIP (0.300", 7.62mm)
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution of the IR2113 is determined by strict equivalence across the following critical parameters:

  • Driven Configuration: Half-Bridge topology must be maintained
  • Number of Drivers: Exactly 2 independent channels required
  • Gate Type: Must support IGBT and N-Channel MOSFET switching
  • Voltage - Supply: Operating range 3.3V ~ 20V
  • Logic Voltage Thresholds: VIL = 6V, VIH = 9.5V
  • Peak Output Current: 2A source and 2A sink capability
  • Input Logic: Non-Inverting configuration
  • Bootstrap Voltage Rating: 600V maximum
  • Timing Characteristics: Rise time 25ns, Fall time 17ns
  • Package: 14-DIP through-hole form factor
  • Temperature Range: -40°C to 150°C junction temperature

The IR2113PBF is identified as a direct substitute based on complete electrical and mechanical parameter equivalence across all specified criteria.

Parameter Comparison

Parameter IR2113 IR2113PBF
Manufacturer Infineon Technologies Infineon Technologies
Driven Configuration Half-Bridge Half-Bridge
Number of Drivers 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 3.3V ~ 20V 3.3V ~ 20V
Logic Voltage - VIL, VIH 6V, 9.5V 6V, 9.5V
Current - Peak Output (Source, Sink) 2A, 2A 2A, 2A
Input Type Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 600 V 600 V
Rise / Fall Time (Typ) 25ns, 17ns 25ns, 17ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Package / Case 14-DIP (0.300", 7.62mm) 14-DIP (0.300", 7.62mm)
Mounting Type Through Hole Through Hole
Product Status Obsolete Not For New Designs
RoHS Status RoHS non-compliant ROHS3 Compliant
Packaging Type Not specified Tube

Engineering Selection Recommendations

The IR2113PBF provides complete electrical and mechanical compatibility with the IR2113. Both devices share identical functional specifications across all critical parameters including driver configuration, output current capability, voltage ratings, and timing characteristics.

The primary distinction between these parts is regulatory compliance status. The IR2113PBF achieves ROHS3 compliance, whereas the IR2113 is RoHS non-compliant. For applications subject to RoHS requirements or environmental regulations, the IR2113PBF is the appropriate selection. The IR2113PBF carries a "Not For New Designs" status, indicating it remains available for legacy system support and maintenance but is not recommended for new product development.

Both parts are manufactured by Infineon Technologies and maintain identical 14-DIP through-hole packaging, ensuring direct board-level compatibility without layout modifications.

Frequently Asked Questions (FAQ)

Q: Can IR2113PBF be used as a direct replacement for IR2113?

A: Yes. The IR2113PBF is electrically and mechanically equivalent to the IR2113 across all specified parameters. Both devices feature identical half-bridge gate driver functionality, output current ratings, voltage specifications, and 14-DIP package form factor. Direct substitution is supported without circuit modifications.

Q: What is the difference between IR2113 and IR2113PBF?

A: The primary differences are product status and RoHS compliance. The IR2113 is obsolete and RoHS non-compliant. The IR2113PBF is classified as "Not For New Designs" and achieves ROHS3 compliance. Electrical and mechanical specifications are identical.

Q: Are there any package differences between these parts?

A: Both parts use the same 14-DIP (0.300", 7.62mm) through-hole package. The IR2113PBF is supplied in tube packaging, while the IR2113 packaging type is not specified. This does not affect board-level compatibility.

Q: Which part should be selected for new designs?

A: Neither part is recommended for new designs. The IR2113 is obsolete, and the IR2113PBF carries a "Not For New Designs" status. These parts are suitable for legacy system maintenance and production support only. Evaluation of current-generation gate driver alternatives is recommended for new product development.

Q: Does RoHS compliance affect electrical performance?

A: No. RoHS compliance relates to material composition and environmental regulations, not electrical performance. Both the IR2113 and IR2113PBF deliver identical electrical characteristics and functional performance.

Q: What are the critical parameters for substitution compatibility?

A: Substitution compatibility is determined by equivalence in driven configuration (half-bridge), number of drivers (2), gate type (IGBT/N-Channel MOSFET), supply voltage range (3.3V ~ 20V), output current (2A source/sink), input logic type (non-inverting), bootstrap voltage rating (600V), and package form factor (14-DIP through-hole).

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