IR2111S Half-Bridge Gate Driver IC Equivalent & Substitute Parts

Part Overview

The IR2111S is a half-bridge gate driver IC manufactured by Infineon Technologies, designed for driving IGBT and N-Channel MOSFET configurations in power management applications. The device operates with a supply voltage range of 10V to 20V and provides synchronized dual-channel output with peak source and sink currents of 250mA and 500mA respectively.

The IR2111S is classified as obsolete, which necessitates identification of functionally equivalent alternatives for new designs and ongoing system support. The substitute part IR2111SPBF maintains identical electrical and mechanical specifications while offering improved compliance status for modern applications.

Substiute Parts

IR2111S

Infineon TechnologiesIn Stock: 19393IR2111S Datasheet

Current PartRFQ

IR2111SPBF

Infineon TechnologiesIn Stock: 2830IR2111SPBF Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IR2111S is determined by strict equivalence across the following critical parameters:

• Driven configuration (Half-Bridge)
• Channel type (Synchronous)
• Number of drivers (2)
• Gate type compatibility (IGBT, N-Channel MOSFET)
• Supply voltage range (10V ~ 20V)
• Logic voltage thresholds (VIL 8.3V, VIH 12.6V)
• Peak output current specifications (Source 250mA, Sink 500mA)
• Input type (Non-Inverting)
• Bootstrap voltage rating (600V maximum)
• Timing characteristics (Rise/Fall times 80ns/40ns)
• Package form factor (8-SOIC)
• Operating temperature range (-40°C ~ 150°C)

The IR2111SPBF meets all substitution criteria as a direct functional equivalent with identical electrical performance and mechanical compatibility.

Parameter Comparison

Engineering Selection Recommendations

The IR2111SPBF is the direct functional substitute for the IR2111S across all electrical and mechanical parameters. Selection between these parts should be based on the following compliance and status considerations:

For existing designs currently using IR2111S, the IR2111SPBF provides drop-in compatibility with identical performance characteristics and pinout configuration.

For new design implementations, the IR2111SPBF is preferred due to its ROHS3 compliance status, whereas the IR2111S is classified as RoHS non-compliant. The IR2111SPBF also carries a "Not For New Designs" status, indicating it remains available but is not recommended for new development initiatives.

Both parts maintain REACH Unaffected status and identical ECCN and HTSUS classifications. The packaging difference (Tube for IR2111SPBF versus unspecified for IR2111S) does not affect functional compatibility.

Frequently Asked Questions (FAQ)

Q: Can IR2111SPBF be used as a direct replacement for IR2111S in existing applications?

A: Yes. The IR2111SPBF is electrically and mechanically identical to the IR2111S. All electrical parameters, timing characteristics, voltage ratings, current specifications, and package dimensions match exactly. Pin configuration and functional behavior are identical, enabling direct substitution without circuit modification.

Q: What is the difference between IR2111S and IR2111SPBF?

A: The primary differences are compliance status and product lifecycle classification. IR2111SPBF is ROHS3 compliant while IR2111S is RoHS non-compliant. IR2111SPBF carries a "Not For New Designs" status compared to IR2111S being classified as obsolete. Moisture sensitivity levels differ slightly (MSL 2 versus MSL 1), but both remain within acceptable handling parameters. All electrical and mechanical specifications are identical.

Q: Are there any package or pinout differences between these parts?

A: No. Both parts use the 8-SOIC package with identical 0.154" (3.90mm) width. Pin configuration, spacing, and mounting type (Surface Mount) are identical. PCB layout and footprint compatibility is complete.

Q: What supply voltage range do these gate drivers support?

A: Both IR2111S and IR2111SPBF operate with a supply voltage range of 10V to 20V. Logic voltage thresholds are VIL 8.3V and VIH 12.6V.

Q: What is the maximum bootstrap voltage rating?

A: The maximum high-side bootstrap voltage for both parts is 600V, suitable for half-bridge IGBT and N-Channel MOSFET gate drive applications.

Q: What are the output current specifications?

A: Peak source current is 250mA and peak sink current is 500mA for both parts, providing symmetric drive capability for half-bridge configurations.

Q: What operating temperature range is supported?

A: Both parts operate across a junction temperature range of -40°C to 150°C (TJ), suitable for industrial and automotive applications.