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IR2110STR Half-Bridge Gate Driver IC Equivalent & Substitute Parts
Part Overview
The IR2110STR is a half-bridge gate driver IC manufactured by Infineon Technologies, designed to drive IGBT and N-Channel MOSFET devices in power management applications. This device features independent dual-channel configuration with non-inverting input logic and operates across a supply voltage range of 3.3V to 20V.
The IR2110STR is classified as obsolete product status. Identifying equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and support long-term production requirements for applications utilizing this gate driver topology.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Driven Configuration | Half-Bridge |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Voltage - Supply | 3.3V ~ 20V |
| Logic Voltage - VIL, VIH | 6V, 9.5V |
| Current - Peak Output (Source, Sink) | 2A, 2A |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 500V |
| Rise / Fall Time (Typ) | 25ns, 17ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package / Case | 16-SOIC (0.295", 7.50mm Width) |
| Mounting Type | Surface Mount |
Substitute Part Grouping Explanation
Substitution eligibility for the IR2110STR is determined by strict equivalence across the following critical parameters:
Driven configuration (half-bridge), channel type (independent), number of drivers (2), gate type compatibility (IGBT and N-Channel MOSFET), supply voltage range (3.3V ~ 20V), logic voltage thresholds (VIL 6V, VIH 9.5V), peak output current specifications (2A source and sink), input logic type (non-inverting), maximum bootstrap voltage (500V), timing characteristics (rise/fall times 25ns/17ns), operating temperature range (-40°C ~ 150°C), and physical package format (16-SOIC).
The IR2110STRPBF qualifies as a direct substitute based on complete parameter alignment across all electrical and mechanical specifications. The primary distinction between these parts relates to product status classification and compliance certifications rather than functional or electrical characteristics.
Parameter Comparison
| Parameter | IR2110STR | IR2110STRPBF |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Driven Configuration | Half-Bridge | Half-Bridge |
| Channel Type | Independent | Independent |
| Number of Drivers | 2 | 2 |
| Gate Type | IGBT, N-Channel MOSFET | IGBT, N-Channel MOSFET |
| Voltage - Supply | 3.3V ~ 20V | 3.3V ~ 20V |
| Logic Voltage - VIL, VIH | 6V, 9.5V | 6V, 9.5V |
| Current - Peak Output (Source, Sink) | 2A, 2A | 2A, 2A |
| Input Type | Non-Inverting | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 500V | 500V |
| Rise / Fall Time (Typ) | 25ns, 17ns | 25ns, 17ns |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Package / Case | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC (0.295", 7.50mm Width) |
| Mounting Type | Surface Mount | Surface Mount |
| Product Status | Obsolete | Active |
| RoHS Status | RoHS non-compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 3 (168 Hours) |
Engineering Selection Recommendations
The IR2110STRPBF is the direct functional equivalent to the IR2110STR. Selection between these parts should be based on the following criteria:
For new designs or production requiring regulatory compliance, the IR2110STRPBF is the appropriate choice due to its active product status and ROHS3 compliance certification. This part maintains full electrical and mechanical compatibility while providing current manufacturing support and compliance documentation.
For legacy system maintenance or applications where existing inventory of IR2110STR units is available, continued use of the obsolete variant remains electrically valid. However, long-term supply chain considerations favor transition to the IR2110STRPBF to ensure sustained component availability and compliance with evolving regulatory requirements.
Both parts share identical electrical performance characteristics, timing specifications, and thermal operating ranges. Package footprint compatibility is confirmed across both variants, enabling direct PCB-level substitution without layout modification.
Frequently Asked Questions (FAQ)
Q: Can IR2110STRPBF be used as a direct replacement for IR2110STR in existing designs?
A: Yes. The IR2110STRPBF provides complete electrical and mechanical equivalence to the IR2110STR. All functional parameters, output drive capabilities, timing characteristics, and package dimensions are identical. Direct PCB substitution is supported without circuit modification.
Q: What is the primary difference between IR2110STR and IR2110STRPBF?
A: The primary differences are product status classification and compliance certifications. The IR2110STR is classified as obsolete, while IR2110STRPBF maintains active product status. Additionally, IR2110STRPBF is ROHS3 compliant, whereas IR2110STR is RoHS non-compliant. Electrical performance and specifications are identical.
Q: Are there packaging differences between these parts?
A: No. Both IR2110STR and IR2110STRPBF utilize identical 16-SOIC surface mount packaging with 0.295" (7.50mm) width. Moisture sensitivity levels differ (MSL 1 versus MSL 3), but physical package dimensions and pin configurations are equivalent.
Q: Which part should be selected for new production designs?
A: The IR2110STRPBF is the recommended selection for new designs. This part maintains active product status, ensuring sustained manufacturing support, availability, and compliance with current regulatory standards including ROHS3 certification.
Q: Is the 500V bootstrap voltage specification maintained across both variants?
A: Yes. Both IR2110STR and IR2110STRPBF support maximum bootstrap voltage of 500V. High-side gate drive capability is identical across both parts.
Q: Do these parts support the same gate drive types?
A: Yes. Both IR2110STR and IR2110STRPBF are configured to drive IGBT and N-Channel MOSFET devices with identical output current specifications of 2A source and 2A sink capability.
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