IR2110 Half-Bridge Gate Driver IC - Equivalent & Substitute Parts

Part Overview

The IR2110 is a half-bridge gate driver IC manufactured by Infineon Technologies, designed to drive IGBT and N-Channel MOSFET devices in half-bridge configurations. This device operates with independent channels and provides non-inverting logic control with peak output currents of 2A source and sink capability.

The IR2110 is classified as obsolete, which necessitates identification of suitable substitute components for new procurement and ongoing system support. Substitute parts must maintain electrical and mechanical compatibility across critical parameters including supply voltage range, logic voltage thresholds, output current ratings, and package specifications.

Substiute Parts

IR2110

Infineon TechnologiesIn Stock: 3272IR2110 Datasheet

Current PartRFQ

IR2110PBF

Infineon TechnologiesIn Stock: 25719IR2110PBF Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IR2110 is determined by strict equivalence across the following critical parameters:

• Driven Configuration: Half-Bridge topology with independent channels
• Gate Type Compatibility: Support for IGBT and N-Channel MOSFET switching
• Electrical Specifications: Supply voltage range (3.3V ~ 20V), logic voltage thresholds (VIL 6V, VIH 9.5V), and peak output current (2A source/sink)
• Bootstrap Voltage Rating: Maximum 500V high-side voltage capability
• Timing Characteristics: Rise and fall times (25ns, 17ns typical)
• Package Compatibility: 14-DIP through-hole mounting with identical pinout and mechanical dimensions
• Temperature Range: Operating range of -40°C to 150°C junction temperature

The IR2110PBF is identified as a direct substitute based on complete electrical parameter equivalence and identical package specifications. Differences in product status and compliance certifications do not affect functional substitutability.

Parameter Comparison

Engineering Selection Recommendations

IR2110PBF is the direct functional equivalent for IR2110 applications. Both devices are electrically identical across all specified parameters and share identical 14-DIP package specifications, enabling direct pin-compatible substitution.

The IR2110PBF offers improved compliance status with ROHS3 certification, whereas the original IR2110 is RoHS non-compliant. For new designs and systems requiring regulatory compliance, IR2110PBF is the appropriate selection. Both devices maintain identical electrical performance characteristics and operating specifications.

Product status designations (Obsolete vs. Not For New Designs) reflect manufacturing lifecycle classifications and do not indicate functional differences. Selection between these variants should be based on procurement availability, compliance requirements, and system design phase.

Frequently Asked Questions (FAQ)

Q: Can IR2110PBF be used as a direct replacement for IR2110 in existing designs?

A: Yes. IR2110PBF is electrically and mechanically identical to IR2110. Both devices feature identical pin configurations, electrical specifications, and 14-DIP package dimensions, enabling direct substitution without circuit modifications.

Q: What are the key differences between IR2110 and IR2110PBF?

A: The primary differences are product status classification and RoHS compliance. IR2110PBF is ROHS3 compliant, while IR2110 is RoHS non-compliant. All electrical and mechanical specifications are identical.

Q: Are there any packaging differences between these parts?

A: Both devices use 14-DIP (0.300", 7.62mm) through-hole packages. The IR2110PBF is supplied in Tube packaging, while the original IR2110 packaging specification is not detailed. Package dimensions and pinout are identical.

Q: What supply voltage range does this gate driver support?

A: The IR2110 and IR2110PBF both operate with supply voltages from 3.3V to 20V, with logic voltage thresholds of 6V (VIL) and 9.5V (VIH).

Q: What is the maximum bootstrap voltage rating?

A: Both devices support a maximum high-side bootstrap voltage of 500V, suitable for high-voltage half-bridge switching applications.

Q: Can these devices drive both IGBT and MOSFET gates?

A: Yes. Both IR2110 and IR2110PBF are designed to drive IGBT and N-Channel MOSFET devices in half-bridge configurations with independent channel control.

Q: What is the operating temperature range?

A: Both devices operate across a junction temperature range of -40°C to 150°C (TJ).