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IR21091PBF Equivalent & Substitute Parts
Part Overview
The IR21091PBF is a half-bridge gate driver IC manufactured by Infineon Technologies, designed for driving IGBT and N-Channel MOSFET devices in power management applications. This device operates with a supply voltage range of 10V to 20V and features non-inverting input configuration with peak output currents of 200mA (source) and 350mA (sink).
The IR21091PBF is classified as obsolete. Identifying suitable substitute components is necessary to maintain design continuity and ensure availability for new production runs and system upgrades.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Voltage - Supply | 10V ~ 20V |
| Current - Peak Output (Source, Sink) | 200mA, 350mA |
| High Side Voltage - Max (Bootstrap) | 600V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package / Case | 8-DIP (0.300", 7.62mm) |
| RoHS Status | ROHS3 Compliant |
Substitute Part Grouping Explanation
The 2ED21091S06FXUMA1 qualifies as a substitute for the IR21091PBF based on the following alignment of critical electrical parameters:
Both devices share the same base product number (IR21091 / 2ED21091), indicating a common functional core. The substitute maintains compatibility across the following key parameters:
- Supply voltage range: 10V ~ 20V (identical)
- Gate type support: IGBT, N-Channel MOSFET (identical)
- Number of drivers: 2 channels (identical)
- RoHS3 compliance (identical)
- Manufacturer: Infineon Technologies (same source)
The 2ED21091S06FXUMA1 represents an active product variant with enhanced electrical performance characteristics and modern surface-mount packaging, making it suitable for applications where the original through-hole package is no longer required.
Parameter Comparison
| Parameter | IR21091PBF | 2ED21091S06FXUMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Active |
| Driven Configuration | Half-Bridge | High-Side and Low-Side |
| Number of Drivers | 2 | 2 |
| Gate Type | IGBT, N-Channel MOSFET | IGBT, N-Channel MOSFET |
| Voltage - Supply | 10V ~ 20V | 10V ~ 20V |
| Current - Peak Output (Source) | 200mA | 290mA |
| Current - Peak Output (Sink) | 350mA | 700mA |
| High Side Voltage - Max (Bootstrap) | 600V | 20V |
| Rise / Fall Time (Typ) | 150ns, 50ns | 100ns, 35ns |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 125°C (TA) |
| Mounting Type | Through Hole | Surface Mount |
| Package / Case | 8-DIP (0.300", 7.62mm) | 8-SOIC (0.154", 3.90mm Width) |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 3 (168 Hours) |
Engineering Selection Recommendations
The 2ED21091S06FXUMA1 is the manufacturer-recommended substitute for the obsolete IR21091PBF. Both devices are ROHS3 compliant and manufactured by Infineon Technologies, ensuring regulatory alignment and supply chain continuity.
The substitute offers improved electrical performance with higher peak output currents (290mA source, 700mA sink versus 200mA source, 350mA sink) and faster switching times (100ns/35ns rise/fall versus 150ns/50ns). These enhancements provide greater design margin in power management applications.
Design integration requires accommodation of the surface-mount 8-SOIC package in place of the through-hole 8-DIP package. The substitute operates within the same 10V to 20V supply voltage range, supporting identical gate types (IGBT and N-Channel MOSFET).
The operating temperature range of the substitute extends to -40°C to 125°C (ambient), compared to -40°C to 150°C (junction) for the original part. Applications requiring operation above 125°C ambient temperature require thermal analysis to confirm junction temperature compliance.
Frequently Asked Questions (FAQ)
Q: Can the 2ED21091S06FXUMA1 directly replace the IR21091PBF in existing designs?
A: Direct pin-for-pin replacement is not possible due to package differences (8-DIP through-hole versus 8-SOIC surface-mount). PCB layout redesign is required. However, the electrical functionality and supply voltage requirements are compatible.
Q: What are the key differences in electrical performance?
A: The substitute provides higher peak output currents (290mA source, 700mA sink) and faster switching times (100ns/35ns rise/fall). These represent performance improvements suitable for higher-frequency or higher-current applications.
Q: Are there any temperature-related limitations with the substitute?
A: The substitute specifies -40°C to 125°C ambient temperature operation, compared to the original part's -40°C to 150°C junction temperature rating. Applications operating at elevated ambient temperatures require thermal modeling to verify junction temperature remains within limits.
Q: What is the significance of the different bootstrap voltage ratings?
A: The original IR21091PBF supports 600V bootstrap voltage, while the substitute supports 20V. This difference reflects the different driven configurations (half-bridge versus high-side/low-side). Application requirements determine which rating is necessary.
Q: How does the moisture sensitivity level affect handling and storage?
A: The original part has MSL 1 (unlimited shelf life), while the substitute has MSL 3 (168-hour floor life after moisture exposure). The substitute requires standard moisture control procedures during storage and assembly, consistent with modern surface-mount component practices.
Q: Are both parts from the same manufacturer?
A: Yes, both the IR21091PBF and 2ED21091S06FXUMA1 are manufactured by Infineon Technologies, ensuring consistent quality standards and technical support.
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