IR2109 Gate Driver IC - Equivalent & Substitute Parts

Part Overview

The IR2109 is a half-bridge gate driver IC designed for driving IGBT and N-Channel MOSFET configurations in power management applications. This device operates with a supply voltage range of 10V to 20V and provides synchronized dual-channel gate driving with peak output currents of 200mA (source) and 350mA (sink). The IR2109 is classified as obsolete, making identification of functionally equivalent substitute parts essential for ongoing system support and new design implementations.

Substiute Parts

IR2109
Infineon TechnologiesIn Stock: 19244IR2109 Datasheet
IR2109
Current Part
IR2109PBF
International RectifierIn Stock: 159375IR2109PBF Datasheet
IR2109PBF
Direct

Key Parameters

Parameter Value
Manufacturer Part Number IR2109
Manufacturer Infineon Technologies
Category Power Management (PMIC)
Description IC GATE DRVR HALF-BRIDGE 8DIP
Driven Configuration Half-Bridge
Number of Drivers 2
Gate Type IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.9V
Current - Peak Output (Source, Sink) 200mA, 350mA
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 600V
Rise / Fall Time (Typ) 150ns, 50ns
Operating Temperature -40°C ~ 150°C (TJ)
Package / Case 8-DIP (0.300", 7.62mm)
Mounting Type Through Hole
Product Status Obsolete
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the IR2109 is determined by strict equivalence across the following critical parameters:

Functional Parameters:

  • Driven configuration: Half-Bridge topology
  • Number of drivers: 2 channels
  • Gate type compatibility: IGBT and N-Channel MOSFET support
  • Input type: Non-Inverting logic

Electrical Parameters:

  • Supply voltage range: 10V ~ 20V
  • Logic voltage thresholds: VIL 0.8V, VIH 2.9V
  • Peak output current capability: Source 200mA, Sink 350mA
  • Bootstrap voltage rating: 600V maximum
  • Switching characteristics: Rise time 150ns, Fall time 50ns
  • Operating temperature range: -40°C ~ 150°C

Physical Parameters:

  • Package type: 8-DIP (0.300", 7.62mm)
  • Mounting method: Through Hole

The IR2109PBF variant meets all specified electrical and mechanical parameters and qualifies as a direct substitute.

Parameter Comparison

Parameter IR2109 (Main Part) IR2109PBF (Substitute)
Manufacturer Infineon Technologies International Rectifier
Driven Configuration Half-Bridge Half-Bridge
Number of Drivers 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.9V 0.8V, 2.9V
Current - Peak Output (Source, Sink) 200mA, 350mA 200mA, 350mA
Input Type Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 600V 600V
Rise / Fall Time (Typ) 150ns, 50ns 150ns, 50ns
Operating Temperature -40°C ~ 150°C -40°C ~ 150°C
Package / Case 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm)
Mounting Type Through Hole Through Hole
Product Status Obsolete Active
RoHS Status RoHS non-compliant Not specified
ECCN EAR99 EAR99
HTSUS 8542.39.0001 8542.39.0001

Engineering Selection Recommendations

The IR2109PBF is a direct functional equivalent to the IR2109. Both devices share identical electrical specifications, switching characteristics, and physical packaging. The primary distinction is product status: the IR2109 is obsolete while the IR2109PBF maintains active production status through International Rectifier.

For applications currently using the IR2109, the IR2109PBF provides continuity of supply and eliminates obsolescence risk. Both parts carry identical export classification (EAR99) and tariff codes (8542.39.0001), ensuring regulatory consistency. The IR2109PBF is suitable for direct PCB substitution without circuit modification.

Frequently Asked Questions (FAQ)

Q: Can IR2109PBF replace IR2109 in existing designs? A: Yes. The IR2109PBF is electrically and mechanically identical to the IR2109. Direct substitution is possible without circuit redesign or PCB layout modification.

Q: Are there differences in gate drive performance between these parts? A: No. Both devices provide identical peak output currents (200mA source, 350mA sink), switching times (150ns rise, 50ns fall), and logic voltage thresholds (0.8V, 2.9V).

Q: What is the significance of the "PBF" suffix in IR2109PBF? A: The PBF designation indicates the part is manufactured to the same electrical and mechanical specifications as the base IR2109 part number. This suffix is used by International Rectifier for product identification and does not indicate functional differences.

Q: Are both parts suitable for 600V bootstrap applications? A: Yes. Both the IR2109 and IR2109PBF are rated for maximum bootstrap voltage of 600V and support half-bridge gate driving topologies at this voltage level.

Q: What is the operating temperature range for both parts? A: Both devices operate across -40°C to 150°C junction temperature, suitable for industrial and automotive power management applications.

Q: Can these parts drive both IGBT and MOSFET gates? A: Yes. Both the IR2109 and IR2109PBF support gate driving for IGBT and N-Channel MOSFET configurations in half-bridge topologies.

Q: Is the 8-DIP package pinout identical between both parts? A: Yes. Both parts use the 8-DIP (0.300", 7.62mm) through-hole package with identical pinout, enabling direct PCB substitution.

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