IR21064PBF Gate Driver IC - Equivalent & Substitute Parts

Part Overview

The IR21064PBF is a high-side or low-side gate driver IC manufactured by Infineon Technologies, designed for driving IGBT and N-Channel MOSFET gates in power management applications. This component operates with a supply voltage range of 10V to 20V and features independent dual-channel configuration with 200mA source and 350mA sink peak output current capability.

The IR21064PBF is classified as obsolete. Identifying suitable substitute parts is necessary to maintain design continuity and ensure availability for new production runs or system upgrades where this component is no longer readily procurable through standard distribution channels.

Substiute Parts

IR21064PBF

Infineon TechnologiesIn Stock: 1863IR21064PBF Datasheet

Current PartRFQ

2ED21064S06JXUMA1

Infineon TechnologiesIn Stock: 8732ED21064S06JXUMA1 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IR21064PBF is based on the following critical electrical and mechanical parameters:

• Driven Configuration: Both main and substitute parts must support high-side or low-side gate driving capability
• Number of Drivers: Dual-channel (2) independent driver configuration must be maintained
• Gate Type Compatibility: Support for IGBT and N-Channel MOSFET gate driving
• Supply Voltage Range: Operating range of 10V to 20V
• Peak Output Current: Source and sink current capabilities must meet or exceed application requirements
• Bootstrap Voltage Rating: High-side voltage capability for floating gate drive applications
• Operating Temperature Range: Thermal operating envelope for the target application
• Package Type: Physical form factor and mounting technology (through-hole vs. surface mount) determines PCB integration feasibility
• Compliance Standards: RoHS3 compliance and regulatory alignment

The substitute part 2ED21064S06JXUMA1 shares the same base product number (2ED21064) and manufacturer, indicating functional equivalence within the Infineon gate driver product family.

Parameter Comparison

Engineering Selection Recommendations

The 2ED21064S06JXUMA1 is the manufacturer-recommended substitute for the obsolete IR21064PBF. Both components are ROHS3 compliant and manufactured by Infineon Technologies, ensuring regulatory alignment and supply chain continuity.

Key considerations for selection:

Electrical Compatibility: The substitute part provides higher peak output current (290mA source, 700mA sink versus 200mA source, 350mA sink), offering improved drive capability. However, the bootstrap voltage rating differs significantly (20V versus 600V), which may impact suitability for high-voltage floating gate drive applications.

Thermal Performance: The substitute part operates to 125°C (TA) compared to 150°C (TJ) for the main part, representing a reduced thermal envelope.

Switching Performance: The substitute part exhibits faster rise and fall times (100ns/35ns versus 150ns/50ns), enabling higher switching frequencies.

Package Transition: The substitute requires migration from through-hole (14-DIP) to surface-mount (14-SOIC) technology, necessitating PCB redesign and assembly process changes.

Product Status: The substitute part is active and in production, ensuring long-term availability and supply security.

Frequently Asked Questions (FAQ)

Q: Can the 2ED21064S06JXUMA1 directly replace the IR21064PBF without circuit modifications?

A: Direct pin-compatible replacement is not possible due to package differences (14-DIP through-hole versus 14-SOIC surface-mount). PCB layout and assembly process modifications are required. Electrical functionality is compatible for applications within the 20V bootstrap voltage specification.

Q: What is the significance of the bootstrap voltage difference (600V versus 20V)?

A: Bootstrap voltage rating defines the maximum floating gate voltage the driver can withstand. The IR21064PBF supports 600V applications, while the 2ED21064S06JXUMA1 is rated to 20V. Selection depends on the specific high-side gate drive voltage requirement in your application.

Q: Are both parts RoHS3 compliant?

A: Yes, both the IR21064PBF and 2ED21064S06JXUMA1 are ROHS3 compliant, meeting environmental and regulatory requirements for electronic component manufacturing.

Q: How do the output current specifications compare?

A: The 2ED21064S06JXUMA1 provides higher peak output current (290mA source, 700mA sink) compared to the IR21064PBF (200mA source, 350mA sink). This increased drive capability supports faster gate switching and lower gate charge losses in power semiconductor applications.

Q: What are the operating temperature ranges for each part?

A: The IR21064PBF operates from -40°C to 150°C (junction temperature), while the 2ED21064S06JXUMA1 operates from -40°C to 125°C (ambient temperature). The IR21064PBF supports a higher maximum temperature, which may be relevant for high-temperature applications.

Q: Does the faster switching speed of the substitute part affect circuit design?

A: The 2ED21064S06JXUMA1 exhibits faster rise and fall times (100ns/35ns versus 150ns/50ns). This may reduce EMI in some applications but requires verification that gate drive timing and power semiconductor switching characteristics remain compatible with your circuit design.