IR2105 Half-Bridge Gate Driver IC - Equivalent & Substitute Parts

Part Overview

The IR2105 is a half-bridge gate driver IC manufactured by Infineon Technologies, designed to drive IGBT and N-Channel MOSFET devices in synchronous half-bridge configurations. This device operates with a supply voltage range of 10V to 20V and provides peak output currents of 210mA (source) and 360mA (sink). The IR2105 is currently classified as obsolete, making identification of suitable substitute components necessary for ongoing system support and new design considerations.

Substiute Parts

IR2105
Infineon TechnologiesIn Stock: 883IR2105 Datasheet
IR2105
Current Part
IR2184PBF
Infineon TechnologiesIn Stock: 7172IR2184PBF Datasheet
IR2184PBF
MFR Recommended

Key Parameters

Parameter Value
Driven Configuration Half-Bridge
Number of Drivers 2
Gate Type IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 3V
Current - Peak Output (Source, Sink) 210mA, 360mA
High Side Voltage - Max (Bootstrap) 600V
Operating Temperature -40°C ~ 150°C (TJ)
Package / Case 8-DIP (0.300", 7.62mm)
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution of the IR2105 is determined by strict equivalence in the following critical parameters:

  • Driven Configuration: Must be Half-Bridge
  • Number of Drivers: Must be 2
  • Gate Type: Must support IGBT and N-Channel MOSFET
  • Voltage - Supply: Must operate within 10V ~ 20V range
  • High Side Voltage - Max (Bootstrap): Must support 600V minimum
  • Package / Case: Must be 8-DIP (0.300", 7.62mm) for mechanical compatibility
  • Mounting Type: Must be Through Hole

The IR2184PBF meets all these substitution criteria. While this part exhibits improved electrical performance characteristics (higher peak output currents and faster rise/fall times), it maintains functional and mechanical compatibility with the IR2105 within the specified parameter constraints.

Parameter Comparison

Parameter IR2105 IR2184PBF
Driven Configuration Half-Bridge Half-Bridge
Channel Type Synchronous Synchronous
Number of Drivers 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V
Logic Voltage - VIL 0.8V 0.8V
Logic Voltage - VIH 3V 2.7V
Current - Peak Output (Source) 210mA 1.9A
Current - Peak Output (Sink) 360mA 2.3A
Input Type Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 600V 600V
Rise / Fall Time (Typ) 100ns, 50ns 40ns, 20ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Package / Case 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm)
Mounting Type Through Hole Through Hole
RoHS Status RoHS non-compliant ROHS3 Compliant
Product Status Obsolete Not For New Designs

Engineering Selection Recommendations

The IR2184PBF serves as a direct functional substitute for the IR2105. Both devices maintain identical driven configuration, driver count, gate type support, supply voltage range, bootstrap voltage rating, and physical package specifications.

For legacy system maintenance where IR2105 components are no longer available, the IR2184PBF provides equivalent half-bridge gate driving capability with improved electrical performance. The IR2184PBF achieves higher peak output currents (1.9A source, 2.3A sink versus 210mA and 360mA) and faster switching transitions (40ns/20ns rise/fall time versus 100ns/50ns), which may reduce switching losses in power conversion applications.

The IR2184PBF carries ROHS3 compliance status, whereas the IR2105 is RoHS non-compliant. This distinction is relevant for applications subject to regulatory compliance requirements. Both devices are classified as not recommended for new designs, indicating that current-generation alternatives should be evaluated for new product development.

Frequently Asked Questions (FAQ)

Q: Can the IR2184PBF directly replace the IR2105 in existing PCB designs?

A: Yes. Both devices use identical 8-DIP (0.300", 7.62mm) through-hole packaging and maintain the same pinout configuration for half-bridge gate driving applications. No PCB modifications are required for mechanical or electrical interface compatibility.

Q: What are the key differences between these two parts?

A: The primary differences are peak output current capability and switching speed. The IR2184PBF provides approximately 9× higher source current (1.9A vs 210mA) and 6.4× higher sink current (2.3A vs 360mA), with faster rise and fall times. The IR2184PBF also carries ROHS3 compliance certification, whereas the IR2105 does not.

Q: Are there any logic voltage differences that affect circuit design?

A: The VIH (high-level input voltage) specification differs slightly: IR2105 specifies 3V while IR2184PBF specifies 2.7V. Both maintain 0.8V for VIL (low-level input voltage). This minor difference does not affect standard logic-level input compatibility in typical gate driver applications.

Q: Which part should be selected for new designs?

A: Neither the IR2105 nor IR2184PBF is recommended for new designs. Both are classified as obsolete or not for new designs. Current-generation half-bridge gate driver alternatives from Infineon Technologies should be evaluated for new product development.

Q: Is the improved performance of the IR2184PBF beneficial in all applications?

A: The higher output currents and faster switching transitions of the IR2184PBF reduce gate charge delivery time and may decrease switching losses. However, these improvements are only beneficial if the power stage design can accommodate the faster switching characteristics. Existing designs using the IR2105 will function correctly with the IR2184PBF without modification.

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