IR2103PBF Equivalent & Substitute Parts

Part Overview

The IR2103PBF is a half-bridge gate driver IC manufactured by Infineon Technologies, designed to drive IGBT and N-Channel MOSFET devices in power management applications. This component operates with a supply voltage range of 10V to 20V and provides independent dual-channel gate driving with peak output currents of 210mA (source) and 360mA (sink).

The IR2103PBF is classified as obsolete. Identifying equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and support ongoing production requirements for applications utilizing this gate driver topology.

Substiute Parts

IR2103PBF
Infineon TechnologiesIn Stock: 26110IR2103PBF Datasheet
IR2103PBF
Current Part
IR2103STRPBF
Infineon TechnologiesIn Stock: 65250IR2103STRPBF Datasheet
IR2103STRPBF
MFR Recommended

Key Parameters

Parameter Value
Driven Configuration Half-Bridge
Number of Drivers 2
Gate Type IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 3V
Current - Peak Output (Source, Sink) 210mA, 360mA
High Side Voltage - Max (Bootstrap) 600V
Rise / Fall Time (Typ) 100ns, 50ns
Operating Temperature -40°C ~ 150°C (TJ)
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the IR2103PBF is determined by electrical and functional equivalence across the following critical parameters:

  • Half-bridge gate driver topology with independent dual-channel configuration
  • Support for IGBT and N-Channel MOSFET gate driving
  • Supply voltage range of 10V to 20V
  • Peak output current specifications: 210mA source, 360mA sink
  • Bootstrap voltage rating of 600V maximum
  • Logic input voltage levels: VIL 0.8V, VIH 3V
  • Operating temperature range of -40°C to 150°C
  • ROHS3 compliance and REACH unaffected status

The IR2103STRPBF qualifies as a direct substitute based on identical electrical specifications and functional characteristics. The primary distinction between these parts is packaging format and product status.

Parameter Comparison

Parameter IR2103PBF IR2103STRPBF
Manufacturer Infineon Technologies Infineon Technologies
Base Product Number IR2103 IR2103
Driven Configuration Half-Bridge Half-Bridge
Number of Drivers 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 3V 0.8V, 3V
Current - Peak Output (Source, Sink) 210mA, 360mA 210mA, 360mA
High Side Voltage - Max (Bootstrap) 600V 600V
Rise / Fall Time (Typ) 100ns, 50ns 100ns, 50ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Package / Case 8-DIP (0.300", 7.62mm) 8-SOIC (0.154", 3.90mm Width)
Packaging Format Tube Tape & Reel (TR)
Product Status Obsolete Active
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 2 (1 Year)

Engineering Selection Recommendations

The IR2103STRPBF is the active substitute for the obsolete IR2103PBF. Both parts share identical electrical specifications and functional characteristics, ensuring direct functional compatibility in half-bridge gate driver applications.

Selection between these parts is determined by application requirements:

IR2103PBF (Through-Hole, 8-DIP): Suitable for through-hole PCB assembly processes. Product status is obsolete; availability is limited to existing inventory.

IR2103STRPBF (Surface Mount, 8-SOIC): Suitable for surface mount PCB assembly processes. Product status is active with established supply chain availability. This part is recommended for new designs and ongoing production requiring reliable component sourcing.

Both parts maintain ROHS3 compliance and REACH unaffected status. The MSL rating difference (1 versus 2) reflects standard moisture sensitivity classifications for their respective package types and does not affect functional equivalence.

Frequently Asked Questions (FAQ)

Q: Can IR2103STRPBF directly replace IR2103PBF in existing designs?

A: Electrical and functional replacement is direct. PCB layout modification is required due to package format change from 8-DIP (through-hole) to 8-SOIC (surface mount). Footprint redesign and assembly process adjustment are necessary.

Q: What are the key parameters that determine substitution eligibility?

A: Half-bridge topology, dual independent channels, IGBT/N-Channel MOSFET gate type, 10V-20V supply voltage, 210mA/360mA peak output currents, 600V bootstrap voltage rating, and -40°C to 150°C operating temperature range must remain constant across substitute parts.

Q: Why is IR2103PBF classified as obsolete?

A: Product status reflects manufacturer lifecycle decisions. The IR2103STRPBF represents the active continuation of this gate driver family with identical electrical specifications.

Q: Are there compliance differences between these parts?

A: Both parts are ROHS3 compliant and REACH unaffected. MSL ratings differ (1 versus 2) due to package type; this reflects standard moisture sensitivity classifications and does not affect electrical performance or functional compatibility.

Q: What packaging considerations apply to substitution?

A: IR2103PBF uses tube packaging for through-hole components; IR2103STRPBF uses tape and reel packaging for surface mount components. Assembly process, PCB footprint, and handling procedures differ accordingly.

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