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IR2103 Half-Bridge Gate Driver IC - Equivalent & Substitute Parts
Part Overview
The IR2103 is a half-bridge gate driver IC designed for driving IGBT and N-Channel MOSFET configurations in power management applications. This component features independent channel control with inverting and non-inverting input types, operating across a 10V to 20V supply voltage range with a maximum bootstrap voltage of 600V. The IR2103 is classified as obsolete in its original form, necessitating identification of active equivalent parts to ensure design continuity and procurement availability for new production and maintenance applications.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Driven Configuration | Half-Bridge |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Voltage - Supply | 10V ~ 20V |
| Logic Voltage - VIL, VIH | 0.8V, 3V |
| Current - Peak Output (Source, Sink) | 210mA, 360mA |
| Input Type | Inverting, Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 600V |
| Rise / Fall Time (Typ) | 100ns, 50ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package / Case | 8-DIP (0.300", 7.62mm) |
| Mounting Type | Through Hole |
Substitute Part Grouping Explanation
Substitution of the IR2103 is determined by strict equivalence across the following critical parameters:
- Driven Configuration: Half-Bridge topology with independent dual-channel control
- Gate Type Compatibility: Support for both IGBT and N-Channel MOSFET switching elements
- Electrical Specifications: Supply voltage range (10V ~ 20V), logic thresholds (VIL 0.8V, VIH 3V), peak output current (210mA source, 360mA sink), and bootstrap voltage rating (600V maximum)
- Timing Characteristics: Rise and fall times (100ns and 50ns respectively)
- Input Configuration: Inverting and non-inverting input types for flexible gate signal control
- Thermal Range: Operating temperature from -40°C to 150°C junction temperature
- Physical Form Factor: 8-DIP package with 0.300" (7.62mm) pitch for through-hole mounting
Substitute parts must match all parameters listed above to ensure functional and mechanical compatibility within existing circuit designs.
Parameter Comparison
| Parameter | IR2103 (Obsolete) | IR2103PBF (Active) |
|---|---|---|
| Manufacturer | Infineon Technologies | International Rectifier |
| Product Status | Obsolete | Active |
| Driven Configuration | Half-Bridge | Half-Bridge |
| Number of Drivers | 2 | 2 |
| Gate Type | IGBT, N-Channel MOSFET | IGBT, N-Channel MOSFET |
| Voltage - Supply | 10V ~ 20V | 10V ~ 20V |
| Logic Voltage - VIL, VIH | 0.8V, 3V | 0.8V, 3V |
| Current - Peak Output (Source, Sink) | 210mA, 360mA | 210mA, 360mA |
| Input Type | Inverting, Non-Inverting | Inverting, Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 600V | 600V |
| Rise / Fall Time (Typ) | 100ns, 50ns | 100ns, 50ns |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Package / Case | 8-DIP (0.300", 7.62mm) | 8-DIP (0.300", 7.62mm) |
| Mounting Type | Through Hole | Through Hole |
| ECCN | EAR99 | EAR99 |
| HTSUS | 8542.39.0001 | 8542.39.0001 |
Engineering Selection Recommendations
The IR2103PBF represents a direct functional equivalent to the obsolete IR2103. Both parts share identical electrical specifications, timing characteristics, and physical packaging. The primary distinction is product status: IR2103PBF maintains active production and distribution status, ensuring long-term availability and supply chain reliability.
For applications currently using the IR2103, transition to IR2103PBF provides continuity without circuit redesign. Both parts comply with identical export control classifications (ECCN EAR99) and tariff codes (HTSUS 8542.39.0001). The IR2103 carries RoHS non-compliance status, while compliance information for IR2103PBF follows the same regulatory framework.
Selection between these parts is determined solely by procurement availability and supply chain requirements, as electrical and mechanical compatibility is complete.
Frequently Asked Questions (FAQ)
Q: Can IR2103PBF directly replace IR2103 in existing designs? A: Yes. IR2103PBF is electrically and mechanically identical to IR2103 across all specified parameters. No circuit modifications are required for substitution.
Q: Are there any differences in pin configuration or package dimensions? A: No. Both parts use the 8-DIP package with 0.300" (7.62mm) pitch. Pin assignments and functional configuration are identical.
Q: What is the primary reason for substituting IR2103 with IR2103PBF? A: IR2103 is classified as obsolete. IR2103PBF maintains active production status, ensuring availability for new designs and ongoing production requirements.
Q: Do both parts support the same gate types? A: Yes. Both IR2103 and IR2103PBF drive IGBT and N-Channel MOSFET configurations with identical electrical characteristics.
Q: Are the supply voltage and thermal operating ranges identical? A: Yes. Both parts operate across 10V to 20V supply voltage and -40°C to 150°C junction temperature range with identical timing specifications.
Q: What are the key parameters that determine substitution eligibility? A: Half-bridge configuration, dual independent channels, 600V bootstrap voltage rating, 210mA/360mA peak output current, 100ns/50ns rise/fall times, and 8-DIP through-hole packaging are the critical parameters defining substitution compatibility.
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