IR2011S Equivalent & Substitute Parts

Part Overview

The IR2011S is a high-side or low-side gate driver IC manufactured by Infineon Technologies, designed for independent dual-channel N-Channel MOSFET gate driving applications. This 8-SOIC surface mount device operates with a supply voltage range of 10V to 20V and delivers peak output currents of 1A (source and sink). The IR2011S is classified as obsolete, making identification of compatible substitute parts essential for ongoing design support and procurement continuity.

Substiute Parts

IR2011S
Infineon TechnologiesIn Stock: 1299IR2011S Datasheet
IR2011S
Current Part
IR2011SPBF
Infineon TechnologiesIn Stock: 1287IR2011SPBF Datasheet
IR2011SPBF
Direct

Key Parameters

Parameter Value
Manufacturer Part Number IR2011S
Manufacturer Infineon Technologies
Category Power Management (PMIC)
Description IC GATE DRVR HI/LOW SIDE 8SOIC
Driven Configuration High-Side or Low-Side
Number of Drivers 2
Gate Type N-Channel MOSFET
Voltage - Supply 10V ~ 20V
Current - Peak Output (Source, Sink) 1A, 1A
Input Type Inverting
High Side Voltage - Max (Bootstrap) 200V
Rise / Fall Time (Typ) 35ns, 20ns
Operating Temperature -40°C ~ 150°C (TJ)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
Product Status Obsolete

Substitute Part Grouping Explanation

Substitute parts for the IR2011S are identified based on strict electrical and mechanical parameter matching. The following criteria determine substitution eligibility:

Critical Matching Parameters:

  • Driven Configuration: High-Side or Low-Side
  • Number of Drivers: 2 (independent channels)
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10V ~ 20V
  • Current - Peak Output: 1A source and sink capability
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 200V
  • Package / Case: 8-SOIC form factor
  • Mounting Type: Surface Mount

The IR2011SPBF qualifies as a direct substitute because it maintains identical electrical specifications and mechanical packaging while offering improved product status and compliance certifications.

Parameter Comparison

Parameter IR2011S IR2011SPBF
Manufacturer Infineon Technologies Infineon Technologies
Driven Configuration High-Side or Low-Side High-Side or Low-Side
Channel Type Independent Independent
Number of Drivers 2 2
Gate Type N-Channel MOSFET N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 0.7V, 2.2V 0.7V, 2.2V
Current - Peak Output (Source, Sink) 1A, 1A 1A, 1A
Input Type Inverting Inverting
High Side Voltage - Max (Bootstrap) 200V 200V
Rise / Fall Time (Typ) 35ns, 20ns 35ns, 20ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount Surface Mount
Product Status Obsolete Active
RoHS Status RoHS non-compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 2 (1 Year)

Engineering Selection Recommendations

The IR2011SPBF is the direct substitute for the IR2011S. Both parts share identical electrical and mechanical specifications, ensuring functional compatibility in gate driver applications. The IR2011SPBF offers two significant advantages:

Product Status: The IR2011SPBF maintains Active product status, ensuring continued manufacturer support, availability, and technical documentation. The IR2011S is classified as Obsolete, limiting future procurement options.

Compliance Certifications: The IR2011SPBF is ROHS3 compliant, meeting current environmental and regulatory requirements. The IR2011S is RoHS non-compliant. For applications subject to RoHS regulations or requiring compliance documentation, the IR2011SPBF is the appropriate selection.

Moisture Sensitivity: The IR2011SPBF carries MSL 2 (1 Year), while the IR2011S carries MSL 1 (Unlimited). Both ratings are suitable for standard manufacturing and storage conditions.

Frequently Asked Questions (FAQ)

Q: Can IR2011SPBF replace IR2011S in existing designs? A: Yes. The IR2011SPBF is electrically and mechanically identical to the IR2011S. All electrical parameters, including supply voltage, output current, timing characteristics, and bootstrap voltage, are matched. The 8-SOIC package dimensions are identical, allowing direct PCB footprint compatibility.

Q: What is the difference between IR2011S and IR2011SPBF? A: The primary differences are product status and compliance certifications. The IR2011SPBF is an active product with ROHS3 compliance, while the IR2011S is obsolete and RoHS non-compliant. Electrical and mechanical specifications are identical.

Q: Why is the IR2011S classified as obsolete? A: Obsolete status indicates that Infineon Technologies has discontinued active production and support for this part number. The IR2011SPBF represents the current active equivalent.

Q: Are there packaging differences between these parts? A: Both parts use the 8-SOIC (0.154", 3.90mm Width) surface mount package. The IR2011S is supplied in standard packaging, while the IR2011SPBF is supplied in Tube packaging. Both are suitable for automated assembly processes.

Q: What are the critical electrical parameters for gate driver substitution? A: For the IR2011 series, critical parameters include supply voltage range (10V ~ 20V), peak output current (1A source and sink), bootstrap voltage capability (200V), and inverting input logic. All these parameters must match for functional equivalence.

Q: Is the IR2011SPBF suitable for new designs? A: Yes. The IR2011SPBF is an active product with current manufacturer support, making it the appropriate choice for new designs requiring a high-side or low-side gate driver with dual independent channels and 1A output capability.

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