Equivalent & Substitute Parts Reference for IPWS65R022CFD7AXKSA1

Part Overview

The Infineon Technologies IPWS65R022CFD7AXKSA1 is an N-Channel 650 V, 96A (Tc), 446W (Tc) MOSFET, designed for automotive applications and supplied in a PG-TO247-3-31 through-hole package. It utilizes CoolMOS™ technology and offers low Rds(on) of 22mOhm at 58.2A, 10V, with a gate charge of 234 nC. The product is active, RoHS3 compliant, and REACH unaffected, with a high power dissipation capability and a wide operating temperature range.

Alternative models may be required due to changes in inventory, supply chain considerations, or to meet RoHS/REACH compliance and identical mechanical/electrical requirements in redesigns or multi-sourcing programs.

Key Parameters

Parameter	Value
Manufacturer Part Number	IPWS65R022CFD7AXKSA1
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	96A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	22mOhm @ 58.2A, 10V
Vgs(th) (Max) @ Id	4.5V @ 2.91mA
Gate Charge (Qg) (Max) @ Vgs	234 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	11659 pF @ 400 V
Power Dissipation (Max)	446W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-31
Package / Case	TO-247-3
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected

Substitute Part Grouping Explanation

Substitute components for Transistors, FETs, MOSFETs are selected strictly based on identical key electrical and mechanical parameters. The following parameters are used for grouping and direct equivalency assessment:

FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id)
Drive Voltage
Rds(on) (Max) at specified Id and Vgs
Vgs(th) (Max)
Gate charge (Qg)
Power Dissipation (Max)
Input Capacitance (Ciss)
Operating Temperature Range
Mounting Type
Package / Case
RoHS and REACH compliance status

Any substitute listed matches these parameters as provided in the input.

Parameter Comparison

Parameter	IPWS65R022CFD7AXKSA1	IPW65R022CFD7AXKSA1
Manufacturer	Infineon Technologies	Infineon Technologies
Category	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V	650 V
Current - Continuous Drain (Id) @ 25°C	96A (Tc)	96A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V
Rds On (Max) @ Id, Vgs	22mOhm @ 58.2A, 10V	22mOhm @ 58.2A, 10V
Vgs(th) (Max) @ Id	4.5V @ 2.91mA	4.5V @ 2.91mA
Gate Charge (Qg) (Max) @ Vgs	234 nC @ 10 V	234 nC @ 10 V
Vgs (Max)	±30V	±20V
Input Capacitance (Ciss) (Max) @ Vds	11659 pF @ 400 V	11659 pF @ 400 V
Power Dissipation (Max)	446W (Tc)	446W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole
Supplier Device Package	PG-TO247-3-31	PG-TO247-3
Package / Case	TO-247-3	TO-247-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

Both IPWS65R022CFD7AXKSA1 and the substitute IPW65R022CFD7AXKSA1 are listed as active products, ROHS3 compliant, and REACH unaffected. Both have identical electrical and mechanical specifications except for the Vgs (Max) value. Selection between these components can be performed based on product status and compliance data as specified.

Frequently Asked Questions (FAQ)

Q1: What are the main parameters to consider when substituting IPWS65R022CFD7AXKSA1 in a design?
A1: The main criteria include FET type, drain to source voltage (Vdss), continuous drain current (Id), Rds(on), gate charge (Qg), power dissipation, input capacitance, Vgs ratings, operating temperature, mounting type, and package.

Q2: How do I ensure compatibility with the TO-247-3 package in existing PCB designs?
A2: Substitutes listed have the same package type (TO-247-3) and through-hole mounting configuration, ensuring mechanical compatibility.

Q3: Are all substitutes RoHS compliant and REACH unaffected?
A3: Yes, both the main part and substitute part are specified as ROHS3 compliant and REACH unaffected.

Q4: What is the significance of identical key parameters in MOSFET substitutions?
A4: Exact matches in key parameters are required to maintain the same electrical performance and thermal characteristics in the application.

Q5: How does Vgs (Max) affect substitution decisions?
A5: Vgs (Max) specifies the safe maximum gate-source voltage. Only the provided values should be used for compatibility assessment as per the supplied data.

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