IPW65R660CFDFKSA1 Equivalent & Substitute Parts

Part Overview

The IPW65R660CFDFKSA1 is an N-Channel 700V 6A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series. This device is rated for 62.5W power dissipation and features a TO-247-3 through-hole package. The part is currently listed as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and component procurement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	700	V
Continuous Drain Current (Id) @ 25°C	6	A
Rds On (Max) @ 2.1A, 10V	660	mOhm
Gate Threshold Voltage (Vgs(th)) @ 200µA	4.5	V
Gate Charge (Qg) @ 10V	22	nC
Power Dissipation (Max)	62.5	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IPW65R660CFDFKSA1 is determined by the following electrical and mechanical parameters:

Critical Matching Parameters:

FET Type: N-Channel
Package: TO-247-3 (through-hole)
Drain to Source Voltage (Vdss): Equal to or greater than 700V
Continuous Drain Current (Id): Equal to or greater than 6A
Gate Drive Voltage: 10V nominal
Operating Temperature Range: -55°C to 150°C minimum
Mounting: Through-hole configuration

Acceptable Variation Parameters:

Rds On: May vary based on current rating and voltage specifications
Gate Charge (Qg): Variation acceptable within switching performance envelope
Power Dissipation: Higher ratings acceptable for thermal margin
Input Capacitance (Ciss): Variation acceptable with gate drive compatibility

The identified substitute parts meet or exceed the minimum electrical specifications while maintaining mechanical compatibility through identical or equivalent TO-247-3 packaging.

Parameter Comparison

Parameter	IPW65R660CFDFKSA1	IRFPF50PBF	STW10N95K5	Unit
Manufacturer	Infineon Technologies	Vishay Siliconix	STMicroelectronics	—
FET Type	N-Channel	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	700	900	950	V
Continuous Drain Current (Id) @ 25°C	6	6.7	8	A
Rds On (Max) @ 10V	660 @ 2.1A	1.6 @ 4A	800 @ 4A	mOhm
Gate Threshold Voltage (Vgs(th))	4.5 @ 200µA	4 @ 250µA	5 @ 100µA	V
Gate Charge (Qg) @ 10V	22	200	22	nC
Power Dissipation (Max)	62.5	190	130	W
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	°C
Package / Case	TO-247-3	TO-247-3	TO-247-3	—
Mounting Type	Through Hole	Through Hole	Through Hole	—
Product Status	Obsolete	Active	Active	—

Engineering Selection Recommendations

IRFPF50PBF (Vishay Siliconix)

This substitute provides higher voltage rating (900V) and current capability (6.7A) compared to the IPW65R660CFDFKSA1. The device maintains TO-247-3 through-hole packaging and identical operating temperature range. IRFPF50PBF is ROHS3 compliant and carries active product status, ensuring long-term availability. The higher power dissipation rating (190W) provides thermal margin for applications requiring sustained operation. Gate charge is elevated at 200nC, which may impact switching frequency performance in high-speed applications.

STW10N95K5 (STMicroelectronics)

This substitute offers the highest voltage rating (950V) and current capability (8A) of the three options. The device is part of the SuperMESH5™ series and maintains TO-247-3 through-hole packaging with identical operating temperature range. STW10N95K5 is ROHS3 compliant and carries active product status. Gate charge specification matches the original part at 22nC, supporting equivalent switching performance. The 800mOhm Rds On specification at 4A provides acceptable on-state performance. Maximum gate voltage rating extends to ±30V, providing additional design flexibility.

Both substitute parts satisfy the minimum electrical requirements for direct replacement in applications designed for the IPW65R660CFDFKSA1, with the selection between them determined by specific application thermal and switching frequency requirements.

Frequently Asked Questions (FAQ)

Q: Can IRFPF50PBF or STW10N95K5 be used as direct pin-for-pin replacements for IPW65R660CFDFKSA1?

A: Yes. Both substitute parts feature identical TO-247-3 through-hole packaging with matching pin configuration and mechanical footprint. No PCB modifications are required for physical installation.

Q: What is the significance of the higher Vdss ratings in the substitute parts?

A: The IRFPF50PBF (900V) and STW10N95K5 (950V) exceed the original 700V specification. Higher voltage ratings provide design margin and allow operation in applications with transient overvoltage conditions. These parts are backward-compatible with 700V-rated circuit designs.

Q: How does gate charge affect part selection?

A: Gate charge (Qg) determines switching speed and driver power requirements. The IPW65R660CFDFKSA1 and STW10N95K5 both specify 22nC, supporting identical gate drive characteristics. The IRFPF50PBF specifies 200nC, requiring higher driver current and potentially reducing maximum switching frequency. Selection depends on circuit switching frequency requirements.

Q: Are there compliance or availability differences between the substitute parts?

A: Both IRFPF50PBF and STW10N95K5 carry active product status with ROHS3 compliance and REACH unaffected designation. The original IPW65R660CFDFKSA1 is obsolete. Substitute parts offer superior long-term procurement availability and supply chain stability.

Q: What is the impact of different Rds On specifications?

A: Rds On determines on-state power dissipation. The IPW65R660CFDFKSA1 specifies 660mOhm at 2.1A. IRFPF50PBF specifies 1.6Ohm at 4A, and STW10N95K5 specifies 800mOhm at 4A. Higher current ratings in substitute parts result in lower normalized on-state losses. Actual power dissipation depends on application current profile and thermal design.

Q: Can these parts be used interchangeably in existing designs?

A: Yes, provided the application circuit accommodates the electrical parameter variations. Designs must verify compatibility with higher Vdss ratings, current capabilities, and gate charge specifications. Thermal design should account for higher power dissipation ratings in substitute parts.

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