IPW65R310CFDFKSA1 Equivalent & Substitute Parts

Part Overview

The IPW65R310CFDFKSA1 is an N-Channel 650V 11.4A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series. This device features a TO-247-3 through-hole package and is rated for 104.2W power dissipation at case temperature. The part is currently classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

Substiute Parts

IPW65R310CFDFKSA1

Infineon TechnologiesIn Stock: 802IPW65R310CFDFKSA1 Datasheet

Current PartRFQ

SPW15N60C3FKSA1

Infineon TechnologiesIn Stock: 1173SPW15N60C3FKSA1 Datasheet

DirectRFQ

IRFPC60PBF

Vishay SiliconixIn Stock: 1326IRFPC60PBF Datasheet

MFR RecommendedRFQ

IXFH22N60P

IXYSIn Stock: 6309IXFH22N60P Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IPW65R310CFDFKSA1 is determined by the following critical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a minimum Drain to Source Voltage (Vdss) rating equal to or greater than 650V to ensure safe operation in the original application circuit.

Current Handling Capacity: Substitute parts must support continuous drain current (Id) at or above 11.4A at 25°C to maintain functional equivalence in the target application.

Package and Mounting: All substitutes must use TO-247-3 through-hole packaging to ensure mechanical and thermal compatibility with existing PCB layouts and heatsink mounting arrangements.

On-State Resistance: The Rds On parameter directly affects power dissipation and thermal performance. Substitutes with lower Rds On values provide improved efficiency; substitutes with higher Rds On values require thermal re-evaluation.

Gate Charge and Threshold Voltage: These parameters affect switching speed and gate drive requirements. Substitutes must operate within compatible gate drive voltage ranges (±20V nominal).

Operating Temperature Range: All substitutes must support the full -55°C to 150°C operating temperature range to maintain reliability across environmental conditions.

Parameter Comparison

Engineering Selection Recommendations

SPW15N60C3FKSA1 (Infineon): This substitute maintains the same 650V voltage rating as the original part and shares identical CoolMOS™ series technology. The higher continuous drain current (15A vs. 11.4A) and improved Rds On (280mOhm vs. 310mOhm) provide enhanced performance margins. The part is classified as Last Time Buy, indicating limited future availability. RoHS3 compliance is confirmed.

IRFPC60PBF (Vishay Siliconix): This substitute operates at 600V, which is 50V below the original specification. The higher continuous drain current (16A) and significantly higher gate charge (210nC vs. 41nC) require verification of gate drive circuit capability. The part is in active production status with RoHS3 compliance. Higher power dissipation rating (280W) indicates improved thermal performance.

IXFH22N60P (IXYS): This substitute also operates at 600V with the highest continuous drain current (22A) among the listed alternatives. The gate threshold voltage is elevated (5.5V vs. 4.5V), which may affect gate drive timing. Gate charge is moderate (58nC). The part is in active production with RoHS3 compliance and the highest power dissipation rating (400W).

All substitutes maintain TO-247-3 through-hole packaging, -55°C to 150°C operating temperature range, and ±20V gate voltage ratings compatible with the original design.

Frequently Asked Questions (FAQ)

Q: Can the SPW15N60C3FKSA1 directly replace the IPW65R310CFDFKSA1 without circuit modifications?

A: The SPW15N60C3FKSA1 maintains identical voltage rating (650V), package type (TO-247-3), and operating temperature range. The improved current rating and lower Rds On provide functional equivalence with performance enhancement. No circuit modifications are required for basic substitution.

Q: Why do IRFPC60PBF and IXFH22N60P operate at 600V instead of 650V?

A: These parts are rated for 600V maximum drain-source voltage, which is 50V lower than the original specification. Application circuits designed for 650V operation must be re-evaluated to confirm adequate safety margins at the reduced voltage rating.

Q: What is the significance of gate charge differences among the substitutes?

A: Gate charge (Qg) directly affects switching speed and gate drive power requirements. The original part requires 41nC; IRFPC60PBF requires 210nC, which is significantly higher and may require gate drive circuit re-design. SPW15N60C3FKSA1 (63nC) and IXFH22N60P (58nC) are closer to the original specification.

Q: Are all substitute parts RoHS3 compliant?

A: SPW15N60C3FKSA1, IRFPC60PBF, and IXFH22N60P are all confirmed RoHS3 compliant. The original IPW65R310CFDFKSA1 does not specify RoHS status.

Q: What is the difference between Last Time Buy and Active product status?

A: Active status indicates ongoing production and long-term availability. Last Time Buy indicates the manufacturer will cease production after a specified date, with limited stock remaining. IRFPC60PBF and IXFH22N60P are recommended for new designs requiring long-term supply assurance.

Q: Can I use a substitute with higher power dissipation rating in a thermally constrained application?

A: Higher power dissipation ratings indicate improved thermal performance capability. However, actual thermal performance depends on Rds On values, which determine heat generation at operating current. Lower Rds On values reduce heat generation and improve thermal efficiency.

Q: Are gate voltage requirements compatible across all substitutes?

A: All substitutes specify ±20V maximum gate voltage, matching the original part. IXFH22N60P specifies ±30V, providing additional gate voltage margin. Gate threshold voltages vary (3.9V to 5.5V), which may affect switching characteristics in gate drive circuits with fixed voltage supplies.