IPW65R150CFDFKSA2 Equivalent & Substitute Parts

Part Overview

The IPW65R150CFDFKSA2 is an N-Channel 650V 22.4A MOSFET manufactured by Infineon Technologies in the CoolMOS™ CFD2 series. This device is packaged in TO-247-3 through-hole configuration and is currently in active product status with 1090 units in stock. The part delivers 195.3W maximum power dissipation and operates across a temperature range of -55°C to 150°C.

Equivalent and substitute parts are identified based on matching electrical characteristics including drain-source voltage rating, continuous drain current, on-resistance, gate charge, and thermal specifications. Substitute parts enable design flexibility when the primary part becomes unavailable or when alternative sourcing is required.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	22.4	A (Tc)
On-Resistance (Rds On Max) @ 9.3A, 10V	150	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 900µA	4.5	V
Gate Charge (Qg Max) @ 10V	86	nC
Maximum Gate Voltage (Vgs Max)	±20	V
Input Capacitance (Ciss Max) @ 100V	2340	pF
Power Dissipation (Max)	195.3	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
Product Status	Active

Substitute Part Grouping Explanation

Substitute parts for the IPW65R150CFDFKSA2 are classified based on electrical parameter compatibility. The primary substitution criteria are:

Parametric Equivalent Category: Parts matching all critical electrical specifications including 650V Vdss rating, 22.4A continuous drain current, 150mOhm on-resistance at specified gate voltage, and identical thermal operating range.

Manufacturer Recommended Category: Parts with different electrical ratings but compatible package and thermal characteristics, suitable for applications where the higher current or lower voltage rating does not create design constraints.

The following parameters determine substitution eligibility:

Drain-Source Voltage (Vdss) rating
Continuous Drain Current (Id) capability
On-Resistance (Rds On) at specified conditions
Gate Charge (Qg) characteristics
Package configuration (TO-247-3)
Operating temperature range (-55°C to 150°C)
RoHS3 compliance and MSL rating

Parameter Comparison

Parameter	IPW65R150CFDFKSA2 (Main)	IPW65R150CFDFKSA1 (Parametric Equivalent)	IXFH50N60P3 (MFR Recommended)
Manufacturer	Infineon Technologies	Infineon Technologies	IXYS
Vdss (V)	650	650	600
Id @ 25°C (A)	22.4	22.4	50
Rds On Max @ 10V (mOhm)	150	150	145
Vgs(th) Max @ 900µA (V)	4.5	4.5	5
Qg Max @ 10V (nC)	86	86	94
Vgs Max (V)	±20	±20	±30
Ciss Max @ 100V (pF)	2340	2340	6300
Power Dissipation Max (W)	195.3	195.3	1040
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247-3	TO-247-3
Product Status	Active	Obsolete	Active
RoHS3 Compliance	Yes	Yes	Yes
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

IPW65R150CFDFKSA1 (Parametric Equivalent): This Infineon part provides identical electrical performance to the main part across all critical parameters including voltage rating, current capacity, on-resistance, and gate charge. However, this part carries obsolete product status. Selection of this substitute should be limited to legacy system maintenance or when existing inventory is available. Both parts maintain RoHS3 compliance and MSL-1 rating.

IXFH50N60P3 (Manufacturer Recommended): This IXYS part operates at 600V Vdss (50V lower than the main part) with significantly higher continuous drain current of 50A (compared to 22.4A). The on-resistance is comparable at 145mOhm. This part is suitable for applications where the lower voltage rating is acceptable and where higher current capacity provides design margin. The IXFH50N60P3 is in active product status with higher power dissipation capability (1040W vs 195.3W). Gate charge is slightly higher at 94nC. This part maintains RoHS3 compliance and MSL-1 rating.

Selection between these substitutes depends on application voltage requirements and current headroom needs. The parametric equivalent maintains exact electrical specifications but faces obsolescence risk. The manufacturer-recommended part offers higher current capacity with a 50V voltage derating.

Frequently Asked Questions (FAQ)

Q: Can IPW65R150CFDFKSA1 be used as a direct replacement for IPW65R150CFDFKSA2?

A: Yes, from an electrical standpoint. Both parts share identical Vdss (650V), Id (22.4A), Rds On (150mOhm), Qg (86nC), and operating temperature range. However, IPW65R150CFDFKSA1 is obsolete. Direct substitution is viable only if existing inventory is available or if the application can tolerate potential future sourcing challenges.

Q: What are the key differences between IPW65R150CFDFKSA2 and IXFH50N60P3?

A: The primary differences are voltage rating (650V vs 600V), current capacity (22.4A vs 50A), and power dissipation (195.3W vs 1040W). The IXFH50N60P3 has higher current capability and thermal capacity but operates at a lower voltage rating. On-resistance values are comparable (150mOhm vs 145mOhm). Gate charge is slightly higher in the IXFH50N60P3 (94nC vs 86nC).

Q: Is the TO-247-3 package identical across all three parts?

A: Yes. All three parts use the TO-247-3 through-hole package configuration, ensuring mechanical and thermal interface compatibility. The IXFH50N60P3 uses the TO-247AD variant designation but maintains the same physical footprint and pin configuration.

Q: Are there compliance or certification differences between these parts?

A: No. All three parts are RoHS3 compliant, carry MSL-1 (Unlimited) moisture sensitivity rating, and are REACH unaffected. ECCN and HTSUS classifications are identical across all parts.

Q: When should I select IXFH50N60P3 over the Infineon equivalents?

A: Select the IXFH50N60P3 when your application can operate at 600V or lower and when higher current capacity (50A vs 22.4A) provides design margin or reduces thermal stress. This part is in active production status, ensuring long-term availability.

Q: What is the impact of higher gate charge in IXFH50N60P3?

A: The IXFH50N60P3 has gate charge of 94nC compared to 86nC in the main part. This 8nC difference affects gate drive circuit design and switching speed. Higher gate charge requires slightly more drive current or longer switching times. Verify gate driver capability before substitution.

Q: Can I use IPW65R150CFDFKSA1 in new designs?

A: Not recommended. This part is obsolete. New designs should use IPW65R150CFDFKSA2 (active status) or evaluate IXFH50N60P3 based on voltage and current requirements. Obsolete parts present long-term supply chain risk.

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