IPW65R080CFDFKSA1 Equivalent & Substitute Parts

Part Overview

The IPW65R080CFDFKSA1 is an N-Channel 700V 43.3A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series, housed in a TO-247-3 through-hole package. This device is classified as obsolete product status, necessitating identification of active equivalent and substitute components for ongoing design support and procurement continuity. The 700V drain-to-source voltage rating and 43.3A continuous drain current capability position this device for high-voltage switching applications requiring robust thermal performance at 391W maximum power dissipation.

Substiute Parts

IPW65R080CFDFKSA1
Infineon TechnologiesIn Stock: 4336IPW65R080CFDFKSA1 Datasheet
IPW65R080CFDFKSA1
Current Part
IPW65R080CFDFKSA2
Infineon TechnologiesIn Stock: 1009IPW65R080CFDFKSA2 Datasheet
IPW65R080CFDFKSA2
MFR Recommended
FCH077N65F-F085
Fairchild SemiconductorIn Stock: 1687FCH077N65F-F085 Datasheet
FCH077N65F-F085
MFR Recommended
FCH077N65F-F155
Fairchild SemiconductorIn Stock: 861FCH077N65F-F155 Datasheet
FCH077N65F-F155
MFR Recommended
IXFX64N60P3
IXYSIn Stock: 6677IXFX64N60P3 Datasheet
IXFX64N60P3
MFR Recommended
SIHG40N60E-GE3
Vishay SiliconixIn Stock: 2072SIHG40N60E-GE3 Datasheet
SIHG40N60E-GE3
MFR Recommended
STW40N60M2
STMicroelectronicsIn Stock: 25362STW40N60M2 Datasheet
STW40N60M2
MFR Recommended
STW43N60DM2
STMicroelectronicsIn Stock: 2451STW43N60DM2 Datasheet
STW43N60DM2
MFR Recommended
STW45N60DM2AG
STMicroelectronicsIn Stock: 1350STW45N60DM2AG Datasheet
STW45N60DM2AG
MFR Recommended
STWA48N60M2
STMicroelectronicsIn Stock: 1221STWA48N60M2 Datasheet
STWA48N60M2
MFR Recommended
TK35N65W5,S1F
Toshiba Semiconductor and StorageIn Stock: 843TK35N65W5,S1F Datasheet
TK35N65W5,S1F
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 700 V
Continuous Drain Current (Id) @ 25°C 43.3 A
Rds On (Max) @ 17.6A, 10V 80 mOhm
Gate Charge (Qg) @ 10V 170 nC
Input Capacitance (Ciss) @ 100V 5030 pF
Power Dissipation (Max) 391 W
Operating Temperature Range -55 to 150 °C
Package Type TO-247-3 Through Hole
Gate Voltage (Max) ±20 V

Substitute Part Grouping Explanation

Substitution of the IPW65R080CFDFKSA1 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Substitute parts must equal or exceed 700V, or operate at reduced voltage ratings (650V, 600V) when circuit design permits
  • Continuous Drain Current (Id): Substitute parts must meet or exceed 43.3A at 25°C
  • On-State Resistance (Rds On): Lower or equivalent values ensure thermal performance compatibility
  • Package Type: TO-247-3 or compatible through-hole variants (TO-247AC, PLUS247™-3)
  • Operating Temperature: Must support -55°C to 150°C range
  • Gate Voltage Rating: ±20V or higher compatibility

Substitution Groups:

Group 1 – Direct Voltage Equivalents (650V Rating): IPW65R080CFDFKSA2, FCH077N65F-F085, FCH077N65F-F155, TK35N65W5,S1F. These parts maintain 650V Vdss with comparable current ratings and thermal characteristics.

Group 2 – Reduced Voltage Alternatives (600V Rating): IXFX64N60P3, SIHG40N60E-GE3, STW40N60M2, STW43N60DM2, STW45N60DM2AG, STWA48N60M2. These parts operate at 600V Vdss with current ratings from 34A to 64A, suitable for applications where 700V is not required.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (mOhm) Qg @ 10V (nC) Ciss @ 100V (pF) Pd Max (W) Package Status
IPW65R080CFDFKSA1 Infineon 700 43.3 80 170 5030 391 TO-247-3 Obsolete
IPW65R080CFDFKSA2 Infineon 650 43.3 80 167 5030 391 TO-247-3 Active
FCH077N65F-F085 Fairchild 650 54 77 164 7162 481 TO-247 Active
FCH077N65F-F155 Fairchild 650 54 77 164 7109 481 TO-247-3 Active
IXFX64N60P3 IXYS 600 64 95 145 9900 1130 PLUS247-3 Active
SIHG40N60E-GE3 Vishay 600 40 75 197 4436 329 TO-247AC Active
STW40N60M2 STMicroelectronics 600 34 88 57 2500 250 TO-247-3 Active
STW43N60DM2 STMicroelectronics 600 34 93 56 2500 250 TO-247-3 Active
STW45N60DM2AG STMicroelectronics 600 34 93 56 2500 250 TO-247-3 Active
STWA48N60M2 STMicroelectronics 600 42 70 70 3060 300 TO-247-3 Active
TK35N65W5,S1F Toshiba 650 35 95 115 4100 270 TO-247 Active

Engineering Selection Recommendations

Primary Recommendation – Infineon IPW65R080CFDFKSA2: The IPW65R080CFDFKSA2 is the manufacturer-recommended successor to the obsolete IPW65R080CFDFKSA1. This part maintains identical electrical performance (43.3A, 80mOhm Rds On, 391W power dissipation) with a reduced Vdss rating of 650V. The part is active status, ROHS3 compliant, and available in production quantities (982 pcs in stock). Selection of this part requires circuit validation that 650V operation is acceptable for the intended application.

Secondary Recommendation – Fairchild FCH077N65F-F155: The FCH077N65F-F155 provides 650V operation with enhanced current capability (54A) and improved thermal performance (481W). This part is active status and maintains TO-247-3 package compatibility. The part is suitable for applications requiring higher current headroom or improved thermal margins.

Tertiary Recommendation – STMicroelectronics STWA48N60M2: The STWA48N60M2 operates at 600V with 42A continuous current and 70mOhm Rds On, providing close current matching to the original part. This device is active status, ROHS3 compliant, with high inventory availability (1116 pcs). Selection is appropriate for applications where 600V operation is acceptable and lower gate charge (70nC) is beneficial for switching speed optimization.

Automotive-Grade Alternative – STMicroelectronics STW45N60DM2AG: The STW45N60DM2AG is AEC-Q101 qualified and suitable for automotive applications. This part operates at 600V with 34A continuous current and is active status with ROHS3 compliance.

Frequently Asked Questions (FAQ)

Q1: Can the IPW65R080CFDFKSA1 be directly replaced with the IPW65R080CFDFKSA2?

A: The IPW65R080CFDFKSA2 is the manufacturer-recommended direct replacement. Both parts share identical electrical performance (43.3A, 80mOhm Rds On, 391W power dissipation) and TO-247-3 packaging. The primary difference is Vdss rating: 700V (original) versus 650V (replacement). Direct substitution is valid when circuit design operates below 650V.

Q2: What is the significance of Vdss rating differences among substitute parts?

A: Drain-to-Source Voltage (Vdss) represents the maximum voltage the device can block in the off-state. The original part rated 700V can be substituted with 650V or 600V parts only if the circuit's maximum off-state voltage does not exceed the substitute part's rating. Exceeding this rating causes device failure. Circuit analysis must confirm voltage compliance before substitution.

Q3: How do current ratings affect substitution decisions?

A: Continuous drain current (Id) must equal or exceed the original part's 43.3A rating to ensure the substitute can handle the same load current without thermal stress. Parts with lower current ratings (34A, 35A, 40A) are acceptable only if circuit design confirms actual current draw remains below the substitute part's rating. Parts with higher current ratings (54A, 64A) provide additional margin and are universally compatible from a current perspective.

Q4: What role does on-state resistance (Rds On) play in substitution?

A: Rds On determines conduction losses and heat generation. Lower Rds On values (70mOhm, 75mOhm, 77mOhm) reduce power dissipation and improve efficiency compared to the original 80mOhm. Higher Rds On values (88mOhm, 93mOhm, 95mOhm) increase conduction losses and may require thermal design review. Substitution with higher Rds On is acceptable if thermal analysis confirms the substitute's maximum power dissipation rating accommodates the increased losses.

Q5: Are TO-247-3 and PLUS247-3 packages mechanically compatible?

A: Both packages are through-hole variants with similar pin configurations and thermal characteristics. The IXFX64N60P3 (PLUS247-3) is mechanically compatible with TO-247-3 PCB layouts. Verify footprint dimensions and lead spacing with component datasheets before final board design.

Q6: What is the importance of gate charge (Qg) in switching applications?

A: Gate charge affects switching speed and driver circuit requirements. The original part specifies 170nC at 10V. Substitute parts range from 56nC to 197nC. Lower gate charge (56nC, 57nC, 70nC) enables faster switching and reduces driver power consumption. Higher gate charge (164nC, 167nC, 197nC) may require driver circuit adjustment but does not prevent substitution if the driver can supply adequate gate current.

Q7: Which substitute parts are recommended for new designs?

A: For new designs, prioritize active-status parts with ROHS3 compliance and high inventory availability: IPW65R080CFDFKSA2 (Infineon), FCH077N65F-F155 (Fairchild), STWA48N60M2 (STMicroelectronics), and IXFX64N60P3 (IXYS). These parts offer long-term supply security and regulatory compliance.

Q8: Are there automotive-qualified alternatives?

A: Yes. The STW45N60DM2AG is AEC-Q101 qualified and suitable for automotive applications. The FCH077N65F-F085 is also automotive-grade. Both parts are active status and ROHS3 compliant.

Q9: How does input capacitance (Ciss) affect circuit performance?

A: Input capacitance affects gate drive circuit design and switching transients. The original part specifies 5030pF at 100V. Substitute parts range from 2500pF to 9900pF. Higher capacitance (7109pF, 7162pF, 9900pF) increases gate charge and switching losses. Lower capacitance (2500pF) reduces switching losses but may require driver circuit verification. Substitution is valid when the gate driver can supply the required charge within the switching frequency constraints.

Q10: What compliance certifications should be verified for substitution?

A: All recommended substitute parts are ROHS3 compliant and REACH unaffected. Verify ECCN classification (all listed parts are EAR99) for export compliance. For automotive applications, confirm AEC-Q101 qualification (STW45N60DM2AG, FCH077N65F-F085). Moisture sensitivity level (MSL) is 1 (Unlimited) for all parts, indicating no special storage requirements.

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