IPW60R250CP N-Channel 650V 12A MOSFET Equivalent & Substitute Parts

Part Overview

The IPW60R250CP is an N-Channel 650V 12A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series, housed in a TO-247-3 package for through-hole mounting. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The part delivers 104W maximum power dissipation and operates across a temperature range of -55°C to 150°C (TJ). Substitution is required to maintain supply chain availability while preserving circuit functionality in applications requiring high-voltage switching and power conversion.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	12	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	250 mOhm @ 7.8A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	3.5	V @ 440µA
Gate Charge (Qg Max) @ Vgs	35	nC @ 10V
Maximum Gate Voltage (Vgs Max)	±20	V
Input Capacitance (Ciss Max) @ Vds	1200	pF @ 100V
Power Dissipation (Max)	104	W (Tc)
Operating Temperature Range (TJ)	-55 to 150	°C
Package Type	TO-247-3	Through Hole
Technology	MOSFET (Metal Oxide)	N-Channel

Substitute Part Grouping Explanation

Substitution of the IPW60R250CP is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 600V minimum to 650V maximum
Continuous Drain Current (Id): 12A minimum at 25°C
Package Type: TO-247-3 through-hole mounting
Gate Voltage Rating (Vgs Max): ±20V minimum
Operating Temperature Range: -55°C to 150°C minimum
On-State Resistance (Rds On): Performance parameter for efficiency comparison
Gate Charge (Qg): Switching speed and drive circuit compatibility

Substitution Logic: Parts are grouped as direct substitutes when they meet or exceed the minimum electrical specifications while maintaining identical or compatible package geometry. The IPW60R250CP operates at 650V with 12A continuous drain current. Substitute parts must support these voltage and current ratings. Parts with higher current ratings (13A, 15A, 20A) are acceptable as they provide design margin. Parts with 600V rating are acceptable when Vdss is not the limiting factor in the application. All substitute parts must use TO-247-3 packaging for mechanical compatibility.

Parameter Comparison

Parameter	IPW60R250CP (Infineon)	STW18N65M5 (STMicroelectronics)	IXTH20N65X (IXYS)	STW18N60M2 (STMicroelectronics)	STW18NM60N (STMicroelectronics)
Vdss (V)	650	650	650	600	600
Id @ 25°C (A)	12	15	20	13	13
Rds On Max (mOhm)	250 @ 7.8A, 10V	220 @ 7.5A, 10V	210 @ 10A, 10V	280 @ 6.5A, 10V	285 @ 6.5A, 10V
Vgs(th) Max (V)	3.5 @ 440µA	5 @ 250µA	5.5 @ 250µA	4 @ 250µA	4 @ 250µA
Qg Max (nC)	35 @ 10V	31 @ 10V	35 @ 10V	21.5 @ 10V	35 @ 10V
Vgs Max (V)	±20	±25	±30	±25	±25
Ciss Max (pF)	1200 @ 100V	1240 @ 100V	1390 @ 25V	791 @ 100V	1000 @ 50V
Power Dissipation Max (W)	104	110	320	110	110
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Last Time Buy	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	Not specified	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

STW18N65M5 (STMicroelectronics) - Primary Recommendation

The STW18N65M5 is the optimal substitute for the IPW60R250CP. Both devices maintain identical 650V Vdss rating and compatible current specifications (15A vs. 12A). The STW18N65M5 offers superior on-state resistance (220 mOhm vs. 250 mOhm), lower gate charge (31 nC vs. 35 nC), and equivalent power dissipation (110W). The part is Active status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. Inventory availability is 1800 units. The MDmesh™ V series technology provides modern switching characteristics suitable for direct replacement in existing designs.

STW18N60M2 (STMicroelectronics) - Secondary Recommendation

The STW18N60M2 serves as an alternative when 600V operation is acceptable. It provides 13A continuous drain current with lower gate charge (21.5 nC), reducing drive circuit stress. On-state resistance is slightly higher (280 mOhm). The part is Active status with ROHS3 compliance and 1322 units in stock. The MDmesh™ II Plus series represents mature technology with proven field reliability.

STW18NM60N (STMicroelectronics) - Alternative Option

The STW18NM60N operates at 600V with 13A rating and is functionally equivalent to STW18N60M2. It features higher gate charge (35 nC, matching the original IPW60R250CP) and slightly higher on-state resistance (285 mOhm). Active status with ROHS3 compliance and 1787 units in stock. The MDmesh™ II series provides established performance characteristics.

IXTH20N65X (IXYS) - High-Current Alternative

The IXTH20N65X maintains 650V Vdss with elevated 20A continuous drain current, providing significant design margin. It delivers the lowest on-state resistance (210 mOhm) and highest power dissipation capability (320W). Gate voltage rating extends to ±30V. However, the part is classified as Last Time Buy status, limiting long-term procurement viability. Use this substitute only when higher current capacity is required and supply chain continuity is not critical. Inventory is 1327 units.

Selection Criteria Summary:

For direct replacement with modern active status: STW18N65M5
For 600V applications with reduced gate charge: STW18N60M2
For 600V applications with matched gate charge: STW18NM60N
For high-current applications with limited supply: IXTH20N65X

All recommended substitutes are through-hole TO-247-3 packages with -55°C to 150°C operating temperature ranges, ensuring mechanical and thermal compatibility with the original IPW60R250CP design.

Frequently Asked Questions (FAQ)

Q1: Can I use STW18N60M2 or STW18NM60N in place of IPW60R250CP if my circuit operates below 600V?

A: Yes. Both parts are qualified substitutes when the application voltage does not exceed 600V. The 50V voltage margin reduction from 650V to 600V is acceptable in designs with adequate safety margins. Both parts meet or exceed the 12A continuous drain current requirement and maintain TO-247-3 package compatibility. Verify your circuit's maximum operating voltage before selection.

Q2: What is the difference between STW18N65M5 and IXTH20N65X for 650V applications?

A: Both maintain 650V Vdss rating. The STW18N65M5 provides 15A continuous current with 220 mOhm on-state resistance and is Active status. The IXTH20N65X provides 20A continuous current with 210 mOhm on-state resistance but is Last Time Buy status. Select STW18N65M5 for long-term supply chain stability. Select IXTH20N65X only if higher current capacity is required and existing inventory is sufficient for your project lifecycle.

Q3: Are all substitute parts ROHS3 compliant?

A: STW18N65M5, STW18N60M2, and STW18NM60N are ROHS3 compliant. IXTH20N65X RoHS status is not specified in the provided data. Verify IXTH20N65X compliance with your supplier if regulatory certification is required for your application.

Q4: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. The IPW60R250CP specifies 35 nC. STW18N65M5 requires 31 nC (lower), STW18N60M2 requires 21.5 nC (significantly lower), and both STW18NM60N and IXTH20N65X require 35 nC (matched). Lower gate charge reduces drive circuit power dissipation and enables faster switching. Higher gate charge requires more robust gate drive circuitry. Verify your gate driver can supply the required charge for your selected substitute.

Q5: What is the impact of on-state resistance (Rds On) differences?

A: On-state resistance directly affects conduction losses. Lower Rds On reduces power dissipation and heat generation. IPW60R250CP specifies 250 mOhm. STW18N65M5 (220 mOhm) and IXTH20N65X (210 mOhm) provide improved efficiency. STW18N60M2 (280 mOhm) and STW18NM60N (285 mOhm) result in slightly higher losses. For high-frequency or high-current applications, lower Rds On substitutes improve thermal performance.

Q6: Can I use a 20A-rated part (IXTH20N65X) in a circuit designed for 12A?

A: Yes. Higher current rating provides design margin and does not create compatibility issues. The IXTH20N65X will operate safely at 12A continuous current. However, verify that the higher power dissipation capability (320W vs. 104W) does not create thermal management complications in your PCB layout. The part's larger thermal capability may require different heatsinking considerations.

Q7: What is the significance of product status (Active vs. Last Time Buy vs. Obsolete)?

A: Active status indicates ongoing production and long-term availability. Last Time Buy indicates limited remaining production with a defined end-of-life date. Obsolete indicates production has ended. For new designs or long-term production, select Active status parts (STW18N65M5, STW18N60M2, STW18NM60N). Use Last Time Buy parts (IXTH20N65X) only if existing inventory covers your entire project lifecycle.

Q8: Are all substitute parts pin-compatible with IPW60R250CP?

A: Yes. All substitute parts use TO-247-3 through-hole packaging with identical pin configuration and spacing. Direct PCB replacement is possible without layout modifications. Verify gate drive voltage compatibility (Vgs Max ratings range from ±20V to ±30V) with your existing gate driver circuit.

Q9: What inventory levels are available for each substitute?

A: STW18N65M5: 1800 units; STW18N60M2: 1322 units; STW18NM60N: 1787 units; IXTH20N65X: 1327 units. Verify current inventory with your supplier before finalizing procurement decisions, as stock levels change continuously.

Q10: Which substitute offers the best balance of performance and availability?

A: STW18N65M5 provides optimal balance. It maintains 650V Vdss matching the original part, exceeds current requirements (15A vs. 12A), improves on-state resistance (220 mOhm vs. 250 mOhm), and is Active status with 1800 units in stock. It represents the most direct technical and commercial replacement for the obsolete IPW60R250CP.

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