IPW60R045CPFKSA1 Equivalent & Substitute Parts

Part Overview

The IPW60R045CPFKSA1 is an N-Channel 650V 60A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series, housed in a TO-247-3 through-hole package. This device is rated for 431W power dissipation at case temperature and operates across -55°C to 150°C. The part is currently classified as "Not For New Designs," making identification of equivalent and substitute components essential for ongoing production support, maintenance applications, and design continuity where this topology is already established.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	60	A
On-State Resistance (Rds On Max) @ Id, Vgs	45 mOhm @ 44A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	3.5	V @ 3mA
Gate Charge (Qg Max) @ Vgs	190	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	6800	pF @ 100V
Power Dissipation (Max)	431	W
Operating Temperature Range	-55 to 150	°C
Package / Case	TO-247-3	—
Mounting Type	Through Hole	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the IPW60R045CPFKSA1 is determined by the following critical parameters:

Primary Matching Criteria:

Drain to Source Voltage (Vdss): 650V minimum
Continuous Drain Current (Id): 60A or greater at 25°C
Package / Case: TO-247-3 (through-hole, identical pinout)
Operating Temperature Range: -55°C to 150°C minimum
Gate Drive Voltage: 10V standard

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower or equivalent values ensure thermal performance
Gate Charge (Qg): Affects switching speed and driver requirements
Input Capacitance (Ciss): Influences gate drive circuit design
Power Dissipation Rating: Must support application thermal requirements

Substitute parts are grouped into two categories: Direct Electrical Equivalents (matching or exceeding all primary criteria within tight tolerances) and Functional Alternatives (meeting primary criteria with acceptable parameter variations for the application topology).

Parameter Comparison

Parameter	IPW60R045CPFKSA1 (Main)	STW65N65DM2AG	FCH040N65S3-F155	IXFH80N65X2	STW70N60M2	STW77N65M5
Manufacturer	Infineon	STMicroelectronics	onsemi	IXYS	STMicroelectronics	STMicroelectronics
Vdss (V)	650	650	650	650	600	650
Id @ 25°C (A)	60	60	65	80	68	69
Rds On Max (mOhm)	45 @ 44A, 10V	50 @ 30A, 10V	40 @ 32.5A, 10V	40 @ 40A, 10V	40 @ 34A, 10V	38 @ 34.5A, 10V
Vgs(th) Max (V)	3.5 @ 3mA	5 @ 250µA	4.5 @ 6.5mA	5.5 @ 4mA	4 @ 250µA	5 @ 250µA
Qg Max (nC)	190 @ 10V	120 @ 10V	136 @ 10V	143 @ 10V	118 @ 10V	200 @ 10V
Ciss Max (pF)	6800 @ 100V	5500 @ 100V	4740 @ 400V	8245 @ 25V	5200 @ 100V	9800 @ 100V
Power Dissipation Max (W)	431	446	417	890	450	400
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Not For New Designs	Active	Not For New Designs	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

STW65N65DM2AG (STMicroelectronics MDmesh™ DM2)

This part provides the closest electrical match to the IPW60R045CPFKSA1 with identical 650V/60A ratings. The STW65N65DM2AG carries Active product status and AEC-Q101 automotive qualification, providing long-term availability assurance. The 50 mOhm Rds On specification is slightly higher than the main part but remains within acceptable thermal margins for equivalent applications. Gate charge is reduced to 120 nC, improving switching efficiency. This substitute is recommended for direct replacement in existing designs where the main part is obsolete.

FCH040N65S3-F155 (onsemi SuperFET® III)

The FCH040N65S3-F155 exceeds the main part specifications with 65A continuous drain current and superior 40 mOhm Rds On performance. The 650V rating matches exactly. This part is classified as "Not For New Designs" but remains available in inventory. The lower gate charge (136 nC) and reduced input capacitance (4740 pF @ 400V) provide improved switching characteristics. Selection of this part is appropriate where thermal performance or switching speed improvements are beneficial within the existing TO-247-3 footprint.

IXFH80N65X2 (IXYS HiPerFET™ Ultra X2)

The IXFH80N65X2 represents a higher-performance alternative with 80A continuous drain current and 890W power dissipation capability. The 650V rating and TO-247-3 package maintain full compatibility. Active product status ensures long-term supply. The 40 mOhm Rds On and 143 nC gate charge provide balanced performance. This part is suitable for applications requiring higher current capacity or improved thermal headroom within the same package footprint.

STW70N60M2 (STMicroelectronics MDmesh™ II Plus)

The STW70N60M2 operates at 600V (50V lower than the main part) with 68A continuous drain current. This part is appropriate only for applications where 600V Vdss is sufficient. Active product status and extensive inventory (18,329 pcs) provide supply security. The 40 mOhm Rds On and 118 nC gate charge offer improved switching performance. Selection requires confirmation that the 50V voltage margin reduction does not compromise circuit safety margins.

STW77N65M5 (STMicroelectronics MDmesh™ V)

The STW77N65M5 matches the 650V rating with 69A continuous drain current and Active product status. The 38 mOhm Rds On provides superior on-state performance. However, the 200 nC gate charge and 9800 pF input capacitance are significantly elevated compared to the main part, requiring gate driver circuit verification. The 400W power dissipation rating is slightly lower than the main part. This substitute is suitable where lower on-state losses are prioritized and gate drive capability is confirmed adequate.

STW40N60M2 and STW48NM60N (STMicroelectronics)

These parts operate at 600V with reduced current ratings (34A and 44A respectively). Selection is limited to applications where the lower voltage and current specifications are acceptable. Both carry Active product status. These parts are not recommended as direct substitutes for the 650V/60A main part but may serve in lower-performance variants of the same topology.

Frequently Asked Questions (FAQ)

Q: Can STW65N65DM2AG directly replace IPW60R045CPFKSA1 without circuit modification?

A: Yes. The STW65N65DM2AG matches the 650V/60A specifications and TO-247-3 package exactly. The slightly higher Rds On (50 mOhm vs. 45 mOhm) results in approximately 5.6% additional on-state losses, which is typically absorbed within thermal design margins. Gate charge reduction (120 nC vs. 190 nC) may improve switching performance. No circuit redesign is required.

Q: Why does IXFH80N65X2 have higher power dissipation rating than the main part?

A: The IXFH80N65X2 is rated for 80A continuous current versus 60A for the main part. Higher current capability inherently requires greater power dissipation capability (890W vs. 431W) to maintain safe junction temperatures. The 40 mOhm Rds On is identical to several other substitutes, but the higher current rating distributes thermal load across a larger current range.

Q: Are there voltage derating considerations when using STW70N60M2 (600V) instead of IPW60R045CPFKSA1 (650V)?

A: Yes. The 50V reduction in Vdss rating reduces the safety margin in circuits designed for 650V operation. If the circuit operates at or near 600V peak voltage, the STW70N60M2 is not suitable. Confirm that maximum circuit voltage remains at least 50V below the 600V rating to maintain adequate derating margin. This part is recommended only for applications with confirmed voltage headroom.

Q: How does gate charge affect gate driver selection?

A: Gate charge (Qg) determines the total charge the gate driver must supply to switch the MOSFET. The main part requires 190 nC, while substitutes range from 118 nC (STW70N60M2) to 200 nC (STW77N65M5). Existing gate drivers typically accommodate this range without modification. However, if the driver is current-limited or operates at reduced voltage, verify that the specified gate charge can be delivered within acceptable switching time windows. Lower gate charge generally improves switching speed and reduces driver power dissipation.

Q: What is the significance of input capacitance (Ciss) variation among substitutes?

A: Input capacitance affects gate drive circuit impedance and switching transient behavior. The main part specifies 6800 pF @ 100V. Substitutes range from 4740 pF to 9800 pF. Higher Ciss increases gate driver current demand and may slow switching transitions if driver impedance is high. Lower Ciss reduces driver stress and improves switching speed. Verify that gate driver output impedance is compatible with the selected part's Ciss to ensure stable switching behavior and prevent ringing or oscillation.

Q: Can parts with "Not For New Designs" status be used in production?

A: Yes. "Not For New Designs" indicates the manufacturer is not recommending the part for new circuit designs but does not prohibit use in existing production or maintenance applications. Both IPW60R045CPFKSA1 and FCH040N65S3-F155 carry this status. Inventory availability and supply continuity should be verified with the distributor. For long-term production, preference should be given to Active-status substitutes such as STW65N65DM2AG, IXFH80N65X2, STW70N60M2, or STW77N65M5.

Q: Is AEC-Q101 qualification required for all applications?

A: AEC-Q101 automotive qualification is required only for automotive and safety-critical applications. The STW65N65DM2AG carries AEC-Q101 qualification, making it suitable for automotive use. Other substitutes do not list this qualification. For non-automotive industrial or consumer applications, AEC-Q101 is not a requirement. Confirm application requirements before selecting based on qualification status.

Q: What thermal considerations apply when substituting parts with different power dissipation ratings?

A: Power dissipation rating indicates the maximum power the device can safely dissipate at case temperature (Tc) without exceeding junction temperature limits. The main part is rated 431W, while substitutes range from 400W to 890W. If the application dissipates power near the main part's 431W limit, select a substitute with equal or higher rating to maintain thermal safety margin. Lower-rated substitutes (STW77N65M5 at 400W) are acceptable only if actual application power dissipation is confirmed below the substitute's rating.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message