IPW50R280CEFKSA1 Equivalent & Substitute Parts

Part Overview

The IPW50R280CEFKSA1 is an N-Channel 500V 13A MOSFET manufactured by Infineon Technologies in the CoolMOS™ series. This device is rated for 92W power dissipation and features a maximum on-resistance of 280mOhm at specified conditions. The part is classified as obsolete, making equivalent and substitute components necessary for new designs and ongoing production requirements. Substitute parts must maintain compatibility across drain-source voltage, continuous drain current, on-resistance characteristics, and through-hole TO-247-3 packaging.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	13	A
On-Resistance (Rds On Max) @ 4.2A, 13V	280	mOhm
Gate Threshold Voltage (Vgs th) @ 350µA	3.5	V
Gate Charge (Qg) @ 10V	32.6	nC
Power Dissipation (Max)	92	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—
FET Type	N-Channel Enhancement Mode	—

Substitute Part Grouping Explanation

Substitution of the IPW50R280CEFKSA1 is determined by the following critical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a minimum Vdss of 500V to ensure safe operation in the original application circuit. Parts rated at 600V or higher are acceptable as they provide voltage margin.

Current Capability: The continuous drain current (Id) must equal or exceed 13A at 25°C. Substitute parts with higher current ratings (16A, 19A, 20A, 22A, 23A, 24A, or 26A) are acceptable as they provide current margin without circuit modification.

On-Resistance (Rds On): The maximum on-resistance specification of 280mOhm at the specified gate voltage and current conditions is a critical thermal and efficiency parameter. Substitute parts with equal or lower Rds On values maintain or improve thermal performance.

Package and Mounting: All substitute parts must use through-hole mounting in either TO-247-3 or TO-3P packaging to ensure mechanical and electrical compatibility with existing PCB layouts and heatsink interfaces.

Gate Charge and Switching Characteristics: Gate charge (Qg) values are provided for reference. Lower gate charge values indicate faster switching performance, which may improve efficiency in switching applications.

Temperature Range: All substitute parts maintain the -55°C to 150°C operating temperature range, ensuring thermal compatibility.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Qg @ 10V (nC)	Power Diss. (W)	Package	Status
IPW50R280CEFKSA1	Infineon	500	13	280	32.6	92	TO-247-3	Obsolete
IPW60R120C7XKSA1	Infineon	600	19	120	34	92	TO-247-3	Active
IRFP23N50LPBF	Vishay Siliconix	500	23	235	150	370	TO-247-3	Active
IRFP460LC	Vishay Siliconix	500	20	270	120	280	TO-247-3	Active
IXFH24N50	IXYS	500	24	230	160	300	TO-247-3	Active
IXFH26N50P	IXYS	500	26	230	60	400	TO-247-3	Active
IXFH26N50P3	IXYS	500	26	230	42	500	TO-247-3	Active
IXTH16N50D2	IXYS	500	16	240	199	695	TO-247-3	Active
IXTQ22N50P	IXYS	500	22	270	50	350	TO-3P	Active
IXTQ26N50P	IXYS	500	26	230	65	400	TO-3P	Active
IXTQ460P2	IXYS	500	24	270	48	480	TO-3P	Active

Engineering Selection Recommendations

Direct TO-247-3 Replacements (Same Package):

The following parts maintain identical TO-247-3 packaging and are direct mechanical replacements:

IPW60R120C7XKSA1 (Infineon, Active): Provides higher voltage rating (600V) and improved on-resistance (120mOhm), with active product status and RoHS3 compliance. Suitable for applications requiring enhanced voltage margin.

IRFP23N50LPBF (Vishay Siliconix, Active): Matches 500V rating with higher current capability (23A) and lower on-resistance (235mOhm). RoHS3 compliant with high inventory availability.

IRFP460LC (Vishay Siliconix, Active): Maintains 500V rating with 20A current and 270mOhm on-resistance. RoHS non-compliant; verify compliance requirements before selection.

IXFH24N50 (IXYS, Active): 500V, 24A with 230mOhm on-resistance. RoHS3 compliant. HiPerFET™ series technology.

IXFH26N50P (IXYS, Active): 500V, 26A with 230mOhm on-resistance and reduced gate charge (60nC). RoHS3 compliant. Polar series.

IXFH26N50P3 (IXYS, Active): 500V, 26A with 230mOhm on-resistance and lowest gate charge (42nC). RoHS3 compliant. Polar3™ series with improved switching performance.

IXTH16N50D2 (IXYS, Active): 500V, 16A depletion-mode device with 240mOhm on-resistance. RoHS3 compliant. Note: Depletion-mode operation differs from enhancement-mode original part.

Alternative Packaging (TO-3P):

The following parts provide equivalent electrical performance in TO-3P through-hole packaging, requiring PCB layout modification:

IXTQ22N50P (IXYS, Active): 500V, 22A with 270mOhm on-resistance. RoHS3 compliant. TO-3P package.

IXTQ26N50P (IXYS, Active): 500V, 26A with 230mOhm on-resistance. RoHS3 compliant. TO-3P package.

IXTQ460P2 (IXYS, Active): 500V, 24A with 270mOhm on-resistance. RoHS3 compliant. TO-3P package with PolarP2™ technology.

Voltage-Upgraded Option:

IPW60R120C7XKSA1 provides a higher voltage rating (600V) while maintaining the same package and improving on-resistance performance. This option is suitable when circuit topology permits higher voltage operation.

Frequently Asked Questions (FAQ)

Q: Can I use a substitute part with higher drain current rating than the original IPW50R280CEFKSA1?

A: Yes. The IPW50R280CEFKSA1 requires minimum 13A continuous drain current. Substitute parts rated at 16A, 19A, 20A, 22A, 23A, 24A, or 26A provide current margin and are electrically compatible. Higher current ratings do not require circuit modification.

Q: What is the significance of on-resistance (Rds On) in selecting a substitute?

A: On-resistance directly affects power dissipation and thermal performance. The original part specifies 280mOhm maximum. Substitute parts with equal or lower Rds On values (such as 120mOhm, 230mOhm, or 235mOhm) maintain or improve efficiency. Higher Rds On values increase heat generation and may require thermal design review.

Q: Are TO-247-3 and TO-3P packages interchangeable?

A: No. TO-247-3 and TO-3P are different physical packages with different pin configurations and heatsink interfaces. TO-247-3 parts are direct mechanical replacements for the original. TO-3P parts require PCB layout and heatsink modification but provide equivalent electrical performance.

Q: Why is gate charge (Qg) important for substitution?

A: Gate charge affects switching speed and driver circuit requirements. Lower gate charge (such as 42nC in IXFH26N50P3 versus 32.6nC in the original) indicates faster switching. Higher gate charge (such as 150nC in IRFP23N50LPBF) may require driver circuit verification but does not prevent substitution.

Q: What does "obsolete" status mean for the original part?

A: Obsolete status indicates the manufacturer has discontinued production. Substitute parts with "Active" status are currently manufactured and supported, ensuring long-term availability and supply chain reliability.

Q: Does higher voltage rating (600V) affect circuit operation?

A: No. The IPW60R120C7XKSA1 rated at 600V is fully compatible in circuits designed for 500V operation. The higher voltage rating provides additional safety margin and does not affect circuit function.

Q: What is the difference between enhancement-mode and depletion-mode MOSFETs?

A: Enhancement-mode devices (standard) require positive gate voltage to conduct. Depletion-mode devices (such as IXTH16N50D2) conduct at zero gate voltage and require negative voltage to turn off. The original IPW50R280CEFKSA1 is enhancement-mode. Depletion-mode substitution requires circuit design verification.

Q: Are all substitute parts RoHS compliant?

A: Most substitute parts listed are RoHS3 compliant. IRFP460LC is RoHS non-compliant. Verify RoHS compliance requirements for your application before final selection.

Q: Can I use IPW60R120C7XKSA1 as a direct replacement without circuit modification?

A: Yes. The IPW60R120C7XKSA1 maintains identical TO-247-3 packaging and pin configuration. The higher voltage rating (600V versus 500V) and improved on-resistance (120mOhm versus 280mOhm) provide performance enhancement without requiring circuit modification.

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