IPU50R950CEAKMA2 Equivalent & Substitute Parts

Part Overview

The IPU50R950CEAKMA2 is an N-Channel MOSFET manufactured by Infineon Technologies, part of the CoolMOS™ CE series. This device features a 500 V drain-to-source voltage rating with 4.3 A continuous drain current and is housed in a TO-251-3 through-hole package. The product is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

Substiute Parts

IPU50R950CEAKMA2

Infineon TechnologiesIn Stock: 1165IPU50R950CEAKMA2 Datasheet

Current PartRFQ

STD7NM80

STMicroelectronicsIn Stock: 32819STD7NM80 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IPU50R950CEAKMA2 is determined by the following critical electrical parameters:

Voltage Rating Compatibility: The substitute must support the application's maximum drain-to-source voltage requirement. The IPU50R950CEAKMA2 operates at 500 V; substitutes with equal or higher voltage ratings are acceptable.

Current Handling Capacity: The substitute must provide continuous drain current equal to or exceeding the 4.3 A requirement at 25°C case temperature.

On-State Resistance (Rds On): This parameter directly affects power dissipation and thermal performance. The IPU50R950CEAKMA2 specifies 950 mOhm maximum at 1.2 A and 13 V gate drive.

Gate Drive Voltage: The substitute must be compatible with the available gate drive voltage. The IPU50R950CEAKMA2 uses 13 V maximum Rds On specification.

Thermal Performance: Power dissipation capability must support the application's thermal budget. The IPU50R950CEAKMA2 dissipates 53 W maximum.

Package and Mounting: While the original uses through-hole TO-251-3 packaging, surface-mount alternatives may be acceptable depending on circuit board design constraints.

Regulatory Compliance: Both parts must maintain ROHS3 compliance and EAR99 classification for unrestricted use.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The IPU50R950CEAKMA2 is discontinued at DiGi Electronics. The STD7NM80 maintains active production status with 32,800 pieces in stock, ensuring long-term availability for new designs and production runs.

Electrical Compatibility: The STD7NM80 exceeds the electrical specifications of the IPU50R950CEAKMA2 in voltage rating (800 V vs. 500 V), continuous current (6.5 A vs. 4.3 A), and power dissipation (90 W vs. 53 W). These higher ratings provide design margin and thermal headroom in applications originally specified for the IPU50R950CEAKMA2.

Regulatory Compliance: Both devices maintain ROHS3 compliance and EAR99 classification, ensuring equivalent regulatory standing for procurement and export.

Packaging Consideration: The STD7NM80 uses surface-mount DPAK packaging, whereas the IPU50R950CEAKMA2 uses through-hole TO-251-3. Circuit board redesign is required for mechanical integration. The DPAK package offers improved thermal performance through direct PCB contact compared to through-hole mounting.

Moisture Sensitivity: The STD7NM80 carries MSL 1 (unlimited shelf life), compared to MSL 3 (168 hours) for the IPU50R950CEAKMA2, reducing handling and storage constraints.

Frequently Asked Questions (FAQ)

Q: Can the STD7NM80 directly replace the IPU50R950CEAKMA2 in existing through-hole designs?

A: No. The STD7NM80 uses DPAK surface-mount packaging, while the IPU50R950CEAKMA2 uses TO-251-3 through-hole packaging. Circuit board layout and footprint redesign are required. Pin configuration differs between package types.

Q: Are the gate drive voltage requirements compatible?

A: The IPU50R950CEAKMA2 specifies maximum Rds On at 13 V gate drive, while the STD7NM80 specifies maximum Rds On at 10 V gate drive. Both devices accept gate voltages up to ±20 V and ±30 V respectively. Existing gate drive circuits designed for 13 V operation are compatible with the STD7NM80, though the substitute will exhibit lower on-state resistance at the same drive voltage.

Q: What are the thermal implications of substitution?

A: The STD7NM80 has higher power dissipation capability (90 W vs. 53 W) and superior thermal characteristics through DPAK surface-mount construction. Applications operating near the thermal limits of the IPU50R950CEAKMA2 will benefit from improved thermal performance with the STD7NM80.

Q: Does the higher voltage rating of the STD7NM80 affect circuit operation?

A: No. The STD7NM80's 800 V rating is a maximum specification. Applications operating at 500 V or below are unaffected by the higher rating. The device functions identically at the application's actual operating voltage.

Q: What is the impact of higher gate charge on circuit design?

A: The STD7NM80 specifies 18 nC gate charge compared to 10.5 nC for the IPU50R950CEAKMA2. Gate drive circuits must supply additional charge during switching transitions. High-frequency switching applications may require gate driver optimization to maintain switching speed and efficiency.

Q: Are there inventory advantages to using the STD7NM80?

A: Yes. The STD7NM80 has 32,800 pieces in stock with active production status, compared to the discontinued IPU50R950CEAKMA2. This ensures reliable long-term supply for production and design iterations.

Q: How do the input capacitance values compare?

A: The STD7NM80 specifies 620 pF input capacitance at 25 V, compared to 231 pF for the IPU50R950CEAKMA2 at 100 V. These measurements occur at different test voltages, making direct comparison imprecise. Gate drive circuit design should account for the STD7NM80's higher capacitance to ensure adequate switching performance.