IPU06N03LB G N-Channel MOSFET 30V 50A Equivalent & Substitute Parts

Part Overview

The IPU06N03LB G is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage and 50A continuous drain current in a TO-251-3 (IPak) package. This device is classified as Obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support and procurement continuity. The OptiMOS™ series design provides efficient switching performance in power management applications requiring through-hole mounting.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	50	A
On-State Resistance (Rds On Max) @ 50A, 10V	6.3	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 40µA	2	V
Gate Charge (Qg Max) @ 5V	22	nC
Input Capacitance (Ciss Max) @ 15V	2800	pF
Power Dissipation (Max)	94	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-251-3 (IPak)	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IPU06N03LB G is determined by strict electrical and mechanical compatibility criteria. The following parameters must be matched or exceeded in substitute components:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): Minimum 30V
Package Type: TO-251-3 (IPak) or equivalent mechanical footprint
Mounting Type: Through Hole
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature Range: Minimum -55°C to 175°C

Performance Parameters (Substitutes may exceed):

Continuous Drain Current (Id): 50A or greater
On-State Resistance (Rds On): Equal or lower values indicate improved performance
Gate Charge (Qg): Lower values indicate faster switching
Power Dissipation: Equal or greater capability

The IRLU8743PBF meets all critical matching criteria while providing superior electrical performance characteristics, including higher current rating (160A vs. 50A) and lower on-state resistance (3.1mOhm vs. 6.3mOhm).

Parameter Comparison

Parameter	IPU06N03LB G	IRLU8743PBF	Unit
Manufacturer	Infineon Technologies	Infineon Technologies	—
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain-to-Source Voltage (Vdss)	30	30	V
Continuous Drain Current (Id) @ 25°C	50	160	A
On-State Resistance (Rds On Max)	6.3 @ 50A, 10V	3.1 @ 25A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max)	2 @ 40µA	2.35 @ 100µA	V
Gate Charge (Qg Max)	22 @ 5V	59 @ 4.5V	nC
Input Capacitance (Ciss Max) @ 15V	2800	4880	pF
Power Dissipation (Max)	94	135	W
Operating Temperature Range	-55 to 175	-55 to 175	°C
Package Type	TO-251-3 (IPak)	TO-251-3 (IPak)	—
Mounting Type	Through Hole	Through Hole	—
Vgs (Max)	±20	±20	V

Engineering Selection Recommendations

IPU06N03LB G Status: Obsolete product. Continued use in new designs is not recommended by the manufacturer.

IRLU8743PBF Suitability: This substitute component is classified as "Not For New Designs" by Infineon Technologies. However, it provides direct electrical and mechanical compatibility with the IPU06N03LB G for replacement and legacy system support applications.

Compliance Considerations:

Both components are REACH Unaffected
Both components carry ECCN classification EAR99
IRLU8743PBF is ROHS3 Compliant
IRLU8743PBF has superior moisture sensitivity rating (MSL 1 vs. MSL 3)

Performance Advantages of IRLU8743PBF: The substitute part delivers higher current capacity (160A vs. 50A) and lower on-state resistance (3.1mOhm vs. 6.3mOhm), resulting in reduced power dissipation in equivalent operating conditions. These characteristics make the IRLU8743PBF suitable for applications where the original IPU06N03LB G is no longer available, with the added benefit of improved thermal performance.

Frequently Asked Questions (FAQ)

Q: Can the IRLU8743PBF directly replace the IPU06N03LB G in existing designs?

A: Yes. Both components share identical drain-to-source voltage (30V), package type (TO-251-3 IPak), mounting configuration (through-hole), and operating temperature range (-55°C to 175°C). The mechanical footprint and electrical interface are compatible.

Q: What are the key differences between these two parts?

A: The IRLU8743PBF provides higher continuous drain current (160A vs. 50A), lower on-state resistance (3.1mOhm vs. 6.3mOhm), and greater power dissipation capability (135W vs. 94W). Gate charge is higher (59nC vs. 22nC), indicating slightly slower switching response. Input capacitance is also higher (4880pF vs. 2800pF).

Q: Are there any thermal considerations when substituting these parts?

A: The IRLU8743PBF has superior thermal characteristics due to lower on-state resistance, resulting in reduced power dissipation at equivalent current levels. Both parts operate across the same temperature range (-55°C to 175°C). The IRLU8743PBF's improved moisture sensitivity rating (MSL 1) provides better reliability in humid storage and handling conditions.

Q: Is the IRLU8743PBF suitable for new product designs?

A: The IRLU8743PBF is classified as "Not For New Designs" by Infineon Technologies. For new designs, consult current Infineon product lines for actively supported alternatives.

Q: What is the inventory status of these components?

A: IPU06N03LB G: 1018 pieces in stock (new original). IRLU8743PBF: 2000 pieces in stock (new original, tube packaging).

Q: Are there any gate drive voltage differences?

A: Both components specify maximum gate-source voltage (Vgs Max) of ±20V. Drive voltage for maximum and minimum on-state resistance is 4.5V and 10V for both parts, ensuring compatible gate drive circuitry.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message