IPS60R360PFD7SAKMA1 Equivalent & Substitute Parts

Part Overview

The IPS60R360PFD7SAKMA1 is an N-Channel 650V 10A MOSFET manufactured by Infineon Technologies, part of the CoolMOS™PFD7 series. This device is packaged in TO-251-3 (IPak) configuration for through-hole mounting applications. The part is currently in Last Time Buy status, indicating end-of-life phase. Identifying equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and support long-term production requirements for applications utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	10	A
On-State Resistance (Rds On Max) @ 2.9A, 10V	360	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 140µA	4.5	V
Gate Charge (Qg Max) @ 10V	12.7	nC
Input Capacitance (Ciss Max) @ 400V	534	pF
Power Dissipation (Max)	43	W
Operating Temperature Range	-40 to 150	°C
Package Type	TO-251-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IPS60R360PFD7SAKMA1 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss) rating must equal or exceed 650V
Continuous Drain Current (Id) must equal or exceed 10A at 25°C
On-State Resistance (Rds On) must not exceed 360mOhm at specified gate voltage
Gate Threshold Voltage (Vgs(th)) must be compatible with 10V drive voltage
Maximum Gate Voltage (Vgs Max) must accommodate ±20V operation
Operating temperature range must encompass -40°C to 150°C

Mechanical Compatibility Criteria:

Package type must be TO-251-3 (IPak) for through-hole mounting
Pin configuration must match PG-TO251-3 supplier device package specification

The substitute part IPU95R450P7AKMA1 meets these criteria through higher voltage rating (950V), increased current capability (14A), and compatible package configuration, while maintaining the same mounting type and electrical interface requirements.

Parameter Comparison

Parameter	IPS60R360PFD7SAKMA1	IPU95R450P7AKMA1	Unit
Manufacturer	Infineon Technologies	Infineon Technologies	—
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	650	950	V
Continuous Drain Current (Id) @ 25°C	10	14	A
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max)	360 @ 2.9A	450 @ 7.2A	mOhm
Vgs(th) (Max)	4.5 @ 140µA	3.5 @ 360µA	V
Gate Charge (Qg Max) @ 10V	12.7	35	nC
Vgs (Max)	±20	±20	V
Input Capacitance (Ciss Max) @ 400V	534	1053	pF
Power Dissipation (Max)	43	104	W
Operating Temperature Range	-40 to 150	-55 to 150	°C
Mounting Type	Through Hole	Through Hole	—
Package / Case	TO-251-3 Short Leads, IPak	TO-251-3 Short Leads, IPak	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

IPS60R360PFD7SAKMA1 (Original Part): The IPS60R360PFD7SAKMA1 is designated Last Time Buy status. Current inventory of 1902 pieces is available. This part remains suitable for applications requiring exactly 650V voltage rating and 10A continuous drain current within the specified thermal and electrical parameters. ROHS3 compliance and REACH unaffected status confirm regulatory alignment. Selection of this part should be limited to existing designs where voltage and current specifications are precisely matched to application requirements.

IPU95R450P7AKMA1 (Substitute Part): The IPU95R450P7AKMA1 is classified as Active product status with 1097 pieces in current inventory. This substitute provides higher voltage capability (950V versus 650V) and increased current rating (14A versus 10A), offering design margin for applications with potential voltage or current growth. The extended operating temperature range (-55°C to 150°C versus -40°C to 150°C) provides additional thermal flexibility. Both parts maintain identical package configuration (TO-251-3), identical maximum gate voltage (±20V), and identical drive voltage specification (10V). ROHS3 compliance and REACH unaffected status are maintained. The substitute part is appropriate for new designs and for applications where higher voltage and current ratings do not create thermal or cost constraints.

Frequently Asked Questions (FAQ)

Q: Can IPU95R450P7AKMA1 directly replace IPS60R360PFD7SAKMA1 in existing designs?

A: Direct replacement is mechanically and electrically feasible. Both parts use identical TO-251-3 package configuration and identical pin assignment. The substitute part exceeds the original part specifications in voltage rating (950V versus 650V), current capability (14A versus 10A), and power dissipation (104W versus 43W). Applications operating at or below the original part's 650V and 10A specifications will function correctly with the substitute. Circuit board layout and thermal management design do not require modification due to identical package dimensions.

Q: What are the key electrical differences between these parts?

A: The primary differences are voltage rating, current rating, and on-state resistance. The substitute part (IPU95R450P7AKMA1) operates at 950V maximum drain-source voltage compared to 650V for the original part. Continuous drain current increases from 10A to 14A. On-state resistance increases from 360mOhm to 450mOhm, reflecting the higher voltage class design. Gate charge increases from 12.7nC to 35nC, and input capacitance increases from 534pF to 1053pF. These changes are characteristic of higher voltage MOSFET technology and do not prevent substitution in applications designed for the lower voltage part.

Q: Are there thermal considerations when substituting these parts?

A: The substitute part (IPU95R450P7AKMA1) has higher maximum power dissipation (104W versus 43W) and extended minimum operating temperature (-55°C versus -40°C). Existing thermal management designs for the original part will remain adequate for the substitute part when operating within the original part's power envelope. If the substitute part is operated at its full 104W power dissipation rating, thermal design review is required to ensure adequate heat dissipation.

Q: Do both parts require identical gate drive circuitry?

A: Yes. Both parts specify identical maximum gate voltage (±20V) and identical drive voltage for maximum on-state resistance specification (10V). Gate threshold voltage differs slightly (4.5V maximum for original part versus 3.5V maximum for substitute part), but both values are within standard gate drive voltage ranges. Existing gate drive circuits designed for the original part will operate correctly with the substitute part without modification.

Q: What is the impact of higher gate charge on circuit performance?

A: The substitute part has higher gate charge (35nC versus 12.7nC). This requires longer gate charge time during switching transitions. Gate drive circuits with adequate current sourcing capability will accommodate this difference without performance degradation. Applications with marginal gate drive current capacity should be evaluated to confirm adequate drive capability for the substitute part's higher gate charge specification.

Q: Are compliance certifications identical between both parts?

A: Yes. Both parts are ROHS3 compliant and REACH unaffected. Both carry identical regulatory classification (ECCN: EAR99, HTSUS: 8541.29.0095). Compliance documentation and regulatory status are equivalent between the original and substitute parts.

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