IPP65R190CFDXKSA1 N-Channel 650V 17.5A MOSFET Equivalent & Substitute Parts

Part Overview

The IPP65R190CFDXKSA1 is an N-Channel 650V 17.5A power MOSFET manufactured by Infineon Technologies in the CoolMOS™ series. This device is packaged in TO-220-3 and rated for 151W power dissipation at case temperature. The part is classified as Obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production support. Substitute parts must maintain electrical compatibility across drain-source voltage, continuous drain current, on-resistance characteristics, and thermal performance parameters while accommodating through-hole TO-220-3 packaging requirements.

Key Parameters

Parameter	Value	Unit	Specification Condition
Drain to Source Voltage (Vdss)	650	V	Absolute Maximum Rating
Continuous Drain Current (Id) @ 25°C	17.5	A	At case temperature (Tc)
On-Resistance (Rds On Max)	190	mOhm	@ 7.3A, 10V Vgs
Gate Threshold Voltage (Vgs(th) Max)	4.5	V	@ 730µA
Gate Charge (Qg Max)	68	nC	@ 10V Vgs
Power Dissipation (Max)	151	W	At case temperature (Tc)
Operating Temperature Range	-55 to 150	°C	Junction temperature (TJ)
Package Type	TO-220-3	—	Through-hole mounting
RoHS Status	ROHS3 Compliant	—	Lead-free

Substitute Part Grouping Explanation

Substitution eligibility is determined by strict alignment with the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-Source Voltage (Vdss): 650V minimum (allows higher ratings)
Continuous Drain Current (Id): 17.5A minimum at 25°C case temperature
On-Resistance (Rds On): 190mOhm maximum at specified gate voltage
Package Type: TO-220-3 through-hole configuration
Operating Temperature: -55°C to 150°C minimum range
RoHS Compliance: ROHS3 Compliant

Substitute Parts Classified by Compatibility:

Group 1 - Direct Electrical Equivalents (Vdss 650V, Id ≥17.5A, Rds On ≤190mOhm):

IPP65R190CFDXKSA2 (Infineon CoolMOS™ CFD2, Active status)
STP20N65M5 (STMicroelectronics MDmesh™ V, 18A, Active status)
STP21N65M5 (STMicroelectronics MDmesh™ V, 17A, Active status)
FCP190N65F (onsemi SuperFET® II, 20.6A, Not For New Designs status)

Group 2 - Enhanced Performance Substitutes (Vdss 650V, Id >17.5A, Rds On ≤190mOhm):

AOT25S65L (Alpha & Omega aMOS™, 25A, 190mOhm, Active status)
IXFP22N65X2 (IXYS HiPerFET™ Ultra X2, 22A, 160mOhm, Active status)
IXTP24N65X2 (IXYS Ultra X2, 24A, 145mOhm, Active status)

Group 3 - Lower Voltage Alternatives (Vdss 600V, Id ≥17A, Rds On ≤190mOhm):

FCP16N60N (Fairchild SupreMOS™, 16A, 600V, Active status)
STP24NM60N (STMicroelectronics MDmesh™ II, 17A, 600V, Active status)
STP25N60M2-EP (STMicroelectronics MDmesh™ M2-EP, 18A, 600V, Active status)

All substitute parts maintain TO-220-3 through-hole packaging, RoHS3 compliance, and operating temperature range compatibility with the original IPP65R190CFDXKSA1.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Qg Max (nC)	Power Diss. (W)	Product Status
IPP65R190CFDXKSA1	Infineon	650	17.5	190	68	151	Obsolete
IPP65R190CFDXKSA2	Infineon	650	17.5	190	68	151	Active
AOT25S65L	Alpha & Omega	650	25	190	26.4	357	Active
FCP190N65F	onsemi	650	20.6	190	78	208	Not For New Designs
IXFP22N65X2	IXYS	650	22	160	38	390	Active
IXTP24N65X2	IXYS	650	24	145	36	390	Active
STP20N65M5	STMicroelectronics	650	18	190	45	130	Active
STP21N65M5	STMicroelectronics	650	17	190	50	125	Active
FCP16N60N	Fairchild	600	16	199	52.3	134.4	Active
STP24NM60N	STMicroelectronics	600	17	190	46	125	Active
STP25N60M2-EP	STMicroelectronics	600	18	188	29	150	Active

Engineering Selection Recommendations

Primary Recommendation - Direct Replacement:

IPP65R190CFDXKSA2 is the manufacturer-recommended direct substitute. This part maintains identical electrical specifications (650V, 17.5A, 190mOhm) and thermal performance (151W) as the obsolete IPP65R190CFDXKSA1. The IPP65R190CFDXKSA2 is classified as Active product status and carries ROHS3 compliance with unlimited moisture sensitivity level (MSL 1). This part is suitable for direct board-level substitution without circuit redesign.

Secondary Recommendations - Active Status Alternatives:

For applications requiring enhanced current handling or thermal performance, the following Active-status parts provide superior specifications while maintaining 650V Vdss rating and TO-220-3 packaging:

IXTP24N65X2 (IXYS): 24A continuous current, 145mOhm on-resistance, 390W power dissipation. Lowest on-resistance in the 650V group, suitable for high-efficiency applications.
IXFP22N65X2 (IXYS): 22A continuous current, 160mOhm on-resistance, 390W power dissipation. Balanced performance with reduced gate charge (38nC).
AOT25S65L (Alpha & Omega): 25A continuous current, 190mOhm on-resistance, 357W power dissipation. Highest current rating with significantly reduced gate charge (26.4nC).

Lower Voltage Alternatives (600V Vdss):

Applications operating below 650V system voltage may utilize 600V-rated devices. STP25N60M2-EP and STP24NM60N provide equivalent or superior electrical characteristics with reduced voltage stress margin. These parts are suitable only for systems with confirmed maximum operating voltage below 600V.

Parts to Avoid:

FCP190N65F carries "Not For New Designs" product status and should not be selected for new circuit development, despite electrical compatibility.

Frequently Asked Questions (FAQ)

Q1: Can IPP65R190CFDXKSA2 be used as a direct drop-in replacement for IPP65R190CFDXKSA1?

A: Yes. IPP65R190CFDXKSA2 is the manufacturer-recommended successor with identical electrical and thermal specifications. No circuit modifications are required. Both parts are packaged in TO-220-3 and share the same pinout configuration.

Q2: What is the primary difference between the obsolete IPP65R190CFDXKSA1 and the active IPP65R190CFDXKSA2?

A: The IPP65R190CFDXKSA2 belongs to the CoolMOS™ CFD2 series (second generation), while the original is from the CoolMOS™ series. Electrical specifications are identical; the CFD2 variant represents an updated manufacturing process with improved availability and active product support.

Q3: Can I use a 600V-rated MOSFET in place of the 650V IPP65R190CFDXKSA1?

A: Only if your circuit design operates with confirmed maximum voltage below 600V. The 650V rating provides 50V safety margin above 600V devices. For applications with voltage transients or margin requirements, maintain 650V minimum rating. Parts like STP25N60M2-EP and STP24NM60N are suitable only for confirmed 600V maximum operation.

Q4: Why do some substitute parts have lower on-resistance (Rds On) than the original?

A: Lower on-resistance values (e.g., IXTP24N65X2 at 145mOhm vs. 190mOhm) represent improved semiconductor technology in newer device generations. These parts provide reduced power dissipation and improved efficiency. They are fully compatible substitutes if thermal design accommodates the higher current capability.

Q5: What does "Not For New Designs" product status mean for FCP190N65F?

A: This status indicates the manufacturer no longer recommends this part for new circuit development. While electrically compatible, FCP190N65F should be avoided in new designs due to potential future discontinuation and lack of manufacturer support. Select Active-status alternatives instead.

Q6: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts carry ROHS3 Compliant certification, matching the environmental compliance of the original IPP65R190CFDXKSA1. All parts are lead-free and suitable for RoHS-regulated applications.

Q7: Can I use AOT25S65L (25A) instead of the 17.5A original part?

A: Yes, if your circuit design accommodates the higher current rating. AOT25S65L maintains 650V Vdss and 190mOhm on-resistance, making it electrically compatible. The higher current rating (25A vs. 17.5A) provides design margin and is not detrimental. However, verify that gate drive circuitry can supply the reduced gate charge (26.4nC vs. 68nC) without timing issues.

Q8: What is the significance of gate charge (Qg) differences between substitute parts?

A: Gate charge affects switching speed and gate drive power requirements. Lower Qg values (e.g., AOT25S65L at 26.4nC) enable faster switching and reduce gate driver power consumption. Higher Qg values (e.g., FCP190N65F at 78nC) require more gate drive energy but may provide improved noise immunity. Verify gate driver compatibility with the selected part's Qg specification.

Q9: Why is input capacitance (Ciss) listed differently across substitute parts?

A: Input capacitance varies with semiconductor technology and die design. While not a primary substitution criterion, Ciss affects gate drive circuit impedance and switching transient behavior. Verify that gate drive circuits designed for the original part's Ciss (1850pF) can accommodate substitute parts with different Ciss values without stability issues.

Q10: Are all substitute parts available in the same TO-220-3 package?

A: Yes. All listed substitute parts are packaged in TO-220-3 through-hole configuration, maintaining mechanical and thermal interface compatibility with the original IPP65R190CFDXKSA1. PCB layout and heatsink mounting remain unchanged.

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