IPP65R150CFDXKSA2 Equivalent & Substitute Parts

Part Overview

The IPP65R150CFDXKSA2 is an N-Channel 650V 22.4A MOSFET manufactured by Infineon Technologies in the CoolMOS™ CFD2 series. This device is packaged in TO-220-3 through-hole configuration and is rated for 195.3W power dissipation at case temperature. The part is currently in active product status with 2138 units in stock.

Substitute parts become necessary when the primary part reaches end-of-life status, when alternative packaging formats are required for specific board layouts, or when design modifications necessitate different thermal or electrical characteristics within acceptable operating parameters.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	22.4	A (Tc)
On-State Resistance (Rds On Max) @ 9.3A, 10V	150	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 900µA	4.5	V
Gate Charge (Qg Max) @ 10V	86	nC
Power Dissipation (Max)	195.3	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Technology	MOSFET (Metal Oxide)	N-Channel

Substitute Part Grouping Explanation

Substitution eligibility for the IPP65R150CFDXKSA2 is determined by the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 650V minimum
Continuous Drain Current (Id): 22.4A minimum at 25°C
On-State Resistance (Rds On): 150mOhm maximum at specified gate voltage
Gate Threshold Voltage (Vgs(th)): 4.5V maximum
Power Dissipation: 195.3W minimum
Operating Temperature Range: -55°C to 150°C minimum
FET Type: N-Channel MOSFET technology
Mounting Type: Through Hole

Packaging Considerations: Substitute parts may utilize different through-hole packages (TO-220-3 or TO-247-3) provided electrical parameters remain within specification. Package differences affect thermal performance and board layout compatibility but do not alter electrical functionality when thermal management is equivalent.

Manufacturer Flexibility: Substitutes from alternative manufacturers (Fairchild Semiconductor, STMicroelectronics, Toshiba Semiconductor) are acceptable when all electrical parameters meet or exceed the primary part specifications.

Parameter Comparison

Parameter	IPP65R150CFDXKSA2 (Main)	IPW65R150CFDFKSA1	IPW65R150CFDFKSA2	FCP16N60N	STP24N60DM2	TK17E65W,S1X
Manufacturer	Infineon	Infineon	Infineon	Fairchild	STMicroelectronics	Toshiba
Vdss (V)	650	650	650	600	600	650
Id @ 25°C (A)	22.4	22.4	22.4	16	18	17.3
Rds On Max (mOhm)	150	150	150	199	200	200
Vgs(th) Max (V)	4.5	4.5	4.5	4	5	3.5
Qg Max (nC)	86	86	86	52.3	29	45
Power Dissipation Max (W)	195.3	195.3	195.3	134.4	150	165
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-247-3	TO-247-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Active	Obsolete	Active	Active	Active	Active
Series	CoolMOS™ CFD2	CoolMOS™	CoolMOS™ CFD2	SupreMOS™	FDmesh™ II Plus	DTMOSIV
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	Not specified	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Parametric Equivalent Substitutes (Infineon CoolMOS™ Series):

IPW65R150CFDFKSA2 is the primary parametric equivalent to IPP65R150CFDXKSA2. Both devices share identical electrical specifications (650V, 22.4A, 150mOhm Rds On, 86nC gate charge) and are both in active product status with ROHS3 compliance. The primary difference is packaging format: IPW65R150CFDFKSA2 uses TO-247-3 instead of TO-220-3. This substitute is suitable when TO-247-3 package compatibility exists in the application.

IPW65R150CFDFKSA1 provides identical electrical performance but carries obsolete product status. This part should be avoided for new designs unless existing inventory constraints require its use.

Manufacturer-Recommended Substitutes (Reduced Performance Parameters):

FCP16N60N (Fairchild Semiconductor) operates at 600V with 16A continuous drain current and 134.4W power dissipation. This part is suitable only for applications where the reduced voltage rating (50V lower than primary part) and current capacity (6.4A lower) are acceptable. Rds On is higher at 199mOhm.

STP24N60DM2 (STMicroelectronics) operates at 600V with 18A continuous drain current and 150W power dissipation. This part is suitable for applications tolerant of 50V lower voltage rating and 4.4A lower current capacity. Rds On is higher at 200mOhm.

TK17E65W,S1X (Toshiba Semiconductor) maintains 650V rating with 17.3A continuous drain current and 165W power dissipation. This part is suitable for applications where 5.1A lower current capacity is acceptable. Rds On is higher at 200mOhm.

Compliance and Certification:

All recommended substitutes maintain ROHS3 compliance and operate within the -55°C to 150°C temperature range. All parts carry EAR99 ECCN classification and REACH Unaffected status, matching the primary part's regulatory profile.

Frequently Asked Questions (FAQ)

Q: Can IPW65R150CFDFKSA2 replace IPP65R150CFDXKSA2 directly?

A: IPW65R150CFDFKSA2 is a parametric equivalent with identical electrical specifications. The primary difference is package format: TO-247-3 versus TO-220-3. Direct replacement is possible if the board layout accommodates TO-247-3 package dimensions and if thermal management remains equivalent. Both parts are Infineon CoolMOS™ CFD2 series devices in active product status.

Q: What is the difference between TO-220-3 and TO-247-3 packages?

A: Both are through-hole packages with three leads. TO-247-3 has larger overall dimensions and typically provides improved thermal performance due to increased copper pad area. Pin spacing and mounting hole locations differ. Board layout modifications are required when switching between these packages.

Q: Why do FCP16N60N, STP24N60DM2, and TK17E65W,S1X have lower current ratings?

A: These parts are from different manufacturers with different technology platforms. FCP16N60N and STP24N60DM2 operate at 600V (50V lower than the primary part), which inherently reduces current capacity. TK17E65W,S1X maintains 650V but uses different semiconductor technology (DTMOSIV) resulting in lower current density. These parts are suitable only when application requirements permit reduced current capacity.

Q: Are all substitute parts ROHS3 compliant?

A: IPP65R150CFDXKSA2, IPW65R150CFDFKSA1, IPW65R150CFDFKSA2, STP24N60DM2, and TK17E65W,S1X are all ROHS3 compliant. FCP16N60N compliance status is not specified in available documentation.

Q: Can I use FCP16N60N in a 650V application?

A: No. FCP16N60N is rated for 600V maximum drain-to-source voltage. Using this part in a 650V application exceeds its voltage specification and creates risk of device failure. The primary part IPP65R150CFDXKSA2 is rated for 650V operation.

Q: What is the significance of gate charge (Qg) differences between substitutes?

A: Gate charge affects switching speed and driver circuit requirements. The primary part has 86nC gate charge. Substitutes with lower gate charge (FCP16N60N at 52.3nC, STP24N60DM2 at 29nC, TK17E65W,S1X at 45nC) switch faster but may require driver circuit adjustments. Higher gate charge requires more driver current but may provide better noise immunity.

Q: Why is IPW65R150CFDFKSA1 listed as obsolete?

A: IPW65R150CFDFKSA1 is marked as obsolete product status, indicating it is no longer in active production. While functionally equivalent to the primary part, this device should not be selected for new designs. IPW65R150CFDFKSA2 is the active replacement within the Infineon product line.

Q: What thermal considerations apply when switching packages?

A: TO-247-3 packages typically provide superior thermal performance compared to TO-220-3 due to larger copper pad areas and improved heat spreading. When substituting TO-220-3 (primary part) with TO-247-3 (IPW65R150CFDFKSA2), thermal performance improves. When substituting with parts having lower power dissipation ratings, verify that thermal management in the application remains adequate for the actual power dissipation in the circuit.

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