IPP65R110CFDXKSA2 Equivalent & Substitute Parts

Part Overview

The IPP65R110CFDXKSA2 is an N-Channel 650V 31.2A MOSFET manufactured by Infineon Technologies, part of the CoolMOS™ CFD2 series. This device is packaged in TO-220-3 through-hole configuration and is rated for 277.8W power dissipation at case temperature. The part is currently Active in product status with 1559 units in stock inventory.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained within the allowed parameter tolerances for this MOSFET category. Substitution becomes necessary when the primary part reaches end-of-life status, inventory constraints occur, or alternative packaging requirements emerge in system design.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	31.2	A
On-State Resistance (Rds On) @ 12.7A, 10V	110	mOhm
Gate Threshold Voltage (Vgs(th)) @ 1.3mA	4.5	V
Gate Charge (Qg) @ 10V	118	nC
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ 100V	3240	pF
Power Dissipation (Max)	277.8	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole
Series	CoolMOS™ CFD2

Substitute Part Grouping Explanation

Substitution logic for the IPP65R110CFDXKSA2 is based on the following electrical and mechanical criteria:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 650V minimum
Continuous Drain Current (Id): 31.2A minimum at 25°C
On-State Resistance (Rds On): 110mOhm maximum at specified gate voltage
Gate Threshold Voltage (Vgs(th)): Within ±20V maximum gate voltage specification
Operating Temperature Range: -55°C to 150°C minimum
Mounting Type: Through Hole configuration
Package Compatibility: TO-220-3 or equivalent footprint

Identified Substitute Categories:

Parametric Equivalent (Same Electrical Performance, Different Package): IPW65R110CFDFKSA2 maintains identical electrical specifications but uses TO-247-3 packaging, suitable for applications requiring higher thermal performance or different PCB layout constraints.
Functional Equivalent (Relaxed Voltage Rating, Enhanced Current): FCP099N60E operates at 600V (50V lower than primary part) with 37A continuous current (5.8A higher) and 99mOhm Rds On. This part is suitable for applications where 600V rating is sufficient and higher current capacity is beneficial. Product status is Not For New Designs.
Functional Equivalent (Relaxed Voltage Rating, Comparable Current): STP34NM60ND operates at 600V with 29A continuous current (2.2A lower) and 110mOhm Rds On. This part maintains the same on-state resistance and is suitable for lower current applications within 600V systems. Product status is Active.

Parameter Comparison

Parameter	IPP65R110CFDXKSA2	IPW65R110CFDFKSA2	FCP099N60E	STP34NM60ND
Manufacturer	Infineon	Infineon	onsemi	STMicroelectronics
Vdss (V)	650	650	600	600
Id @ 25°C (A)	31.2	31.2	37	29
Rds On @ 10V (mOhm)	110	110	99	110
Vgs(th) (V)	4.5	4.5	3.5	5
Qg @ 10V (nC)	118	118	114	80.4
Vgs Max (V)	±20	±20	±20	±25
Ciss @ Vds (pF)	3240 @ 100V	3240 @ 100V	3465 @ 380V	2785 @ 50V
Power Dissipation (W)	277.8	277.8	357	190
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3	TO-247-3	TO-220-3	TO-220-3
Series	CoolMOS™ CFD2	CoolMOS™ CFD2	SuperFET® II	FDmesh™ II
Product Status	Active	Active	Not For New Designs	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Inventory (Pcs)	1559	1149	7280	1210

Engineering Selection Recommendations

For Direct Replacement (Identical Electrical Performance):

IPW65R110CFDFKSA2 is the primary parametric equivalent. It maintains 650V Vdss, 31.2A Id, and 110mOhm Rds On specifications. The only difference is packaging: TO-247-3 versus TO-220-3. This substitution is appropriate when PCB layout permits the larger TO-247-3 footprint or when enhanced thermal performance from the larger package is advantageous. Both parts are Active status and ROHS3 compliant.

For Voltage-Relaxed Applications (600V Systems):

FCP099N60E operates at 600V (50V lower rating) with higher current capacity (37A versus 31.2A) and lower Rds On (99mOhm versus 110mOhm). This part is suitable only for applications where the system voltage does not exceed 600V. Product status is Not For New Designs; use only when inventory of Active alternatives is exhausted. ROHS3 compliant.

STP34NM60ND operates at 600V with 29A continuous current and 110mOhm Rds On. This part is suitable for lower current applications within 600V systems. Product status is Active and ROHS3 compliant. Gate charge is lower (80.4nC versus 118nC), resulting in faster switching characteristics.

Compliance Considerations:

All identified substitutes maintain ROHS3 compliance and REACH Unaffected status. All parts operate within -55°C to 150°C temperature range. Moisture Sensitivity Level is 1 (Unlimited) for Infineon and STMicroelectronics parts.

Frequently Asked Questions (FAQ)

Q: Can IPW65R110CFDFKSA2 be used as a direct replacement for IPP65R110CFDXKSA2?

A: Yes, IPW65R110CFDFKSA2 is a parametric equivalent with identical electrical specifications (650V, 31.2A, 110mOhm Rds On). The difference is packaging: TO-247-3 instead of TO-220-3. PCB layout must accommodate the larger TO-247-3 footprint. Both parts are Active status.

Q: What is the voltage difference between the main part and FCP099N60E?

A: IPP65R110CFDXKSA2 is rated 650V while FCP099N60E is rated 600V. The 50V difference means FCP099N60E cannot be used in applications exceeding 600V. FCP099N60E is suitable only for 600V or lower systems.

Q: Why is FCP099N60E marked "Not For New Designs"?

A: Product status "Not For New Designs" indicates the manufacturer has discontinued active development and recommends alternative parts for new applications. Existing inventory remains available. Use only when other Active alternatives are unavailable.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines switching speed and gate drive requirements. STP34NM60ND has lower gate charge (80.4nC versus 118nC), resulting in faster switching. IPP65R110CFDXKSA2 and IPW65R110CFDFKSA2 have identical gate charge (118nC), ensuring identical switching behavior.

Q: Are all substitutes RoHS3 compliant?

A: Yes, all identified substitutes (IPW65R110CFDFKSA2, FCP099N60E, STP34NM60ND) are ROHS3 compliant and REACH Unaffected.

Q: What is the thermal performance difference between TO-220-3 and TO-247-3 packages?

A: TO-247-3 has larger lead frame and surface area compared to TO-220-3, providing improved thermal dissipation. Both packages support the same 277.8W power dissipation rating for IPW65R110CFDFKSA2. Package selection depends on PCB layout constraints and thermal management requirements.

Q: Can STP34NM60ND replace IPP65R110CFDXKSA2 in all applications?

A: STP34NM60ND operates at 600V (50V lower) and 29A (2.2A lower) compared to IPP65R110CFDXKSA2. Substitution is valid only for applications where system voltage does not exceed 600V and current demand does not exceed 29A. Verify application requirements before substitution.

Q: What inventory levels are available for each part?

A: IPP65R110CFDXKSA2: 1559 units; IPW65R110CFDFKSA2: 1149 units; FCP099N60E: 7280 units; STP34NM60ND: 1210 units. FCP099N60E has the highest inventory availability.

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