IPP65R110CFDXKSA1 N-Channel MOSFET 700V 31.2A Equivalent & Substitute Parts

Part Overview

The IPP65R110CFDXKSA1 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 700V drain-to-source voltage with 31.2A continuous drain current at 25°C. This device belongs to the CoolMOS™ series and is packaged in TO-220-3 through-hole configuration. The part is currently classified as Obsolete, making equivalent and substitute parts necessary for ongoing system support and new design alternatives. The 277.8W power dissipation rating and low on-resistance characteristics make this device suitable for high-voltage switching applications requiring efficient thermal management.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	700	V
Continuous Drain Current (Id) @ 25°C	31.2	A
On-Resistance (Rds On) @ 12.7A, 10V	110	mOhm
Gate-Source Voltage (Vgs) Max	±20	V
Gate Threshold Voltage (Vgs(th)) @ 1.3mA	4.5	V
Gate Charge (Qg) @ 10V	118	nC
Input Capacitance (Ciss) @ 100V	3240	pF
Power Dissipation (Max)	277.8	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IPP65R110CFDXKSA1 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Substitute must equal or exceed 700V for direct replacement in existing circuits
Continuous Drain Current (Id): Substitute must support minimum 31.2A at 25°C
On-Resistance (Rds On): Substitute should maintain comparable on-resistance to preserve thermal and efficiency characteristics
Package Type: TO-220-3 through-hole mounting required for mechanical compatibility
Gate-Source Voltage (Vgs): Must support ±20V operation
Operating Temperature: Must support -55°C to 150°C range

Secondary Compatibility Parameters:

Gate Charge (Qg) and Input Capacitance (Ciss) affect switching speed and gate drive requirements
Power Dissipation rating must accommodate thermal load in target application

The substitute parts listed below are grouped into two categories: Direct Equivalents (matching or exceeding all primary parameters) and Functional Alternatives (meeting electrical requirements with minor parameter variations acceptable for specific applications).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Pd Max (W)	Package	Status
IPP65R110CFDXKSA1	Infineon	700	31.2	110 @ 12.7A	118	3240	277.8	TO-220-3	Obsolete
IPP65R110CFDXKSA2	Infineon	650	31.2	110 @ 12.7A	118	3240	277.8	TO-220-3	Active
FCP110N65F	onsemi	650	35	110 @ 17.5A	145	4895	357	TO-220-3	Not For New Designs
FCP150N65F	onsemi	650	24	150 @ 12A	93	3737	298	TO-220-3	Not For New Designs
STP30N65M5	STMicroelectronics	650	22	139 @ 11A	64	2880	140	TO-220-3	Active
STP31N65M5	STMicroelectronics	650	22	148 @ 11A	45	816	150	TO-220-3	Active
STP32N65M5	STMicroelectronics	650	24	119 @ 12A	72	3320	150	TO-220-3	Obsolete
STP33N60DM2	STMicroelectronics	600	24	130 @ 12A	43	1870	190	TO-220-3	Active
STP33N60M2	STMicroelectronics	600	26	125 @ 13A	45.5	1781	190	TO-220-3	Active
STP34N65M5	STMicroelectronics	650	28	110 @ 14A	62.5	2700	190	TO-220-3	Active

Engineering Selection Recommendations

Recommended Primary Substitute: IPP65R110CFDXKSA2

The IPP65R110CFDXKSA1 is obsolete; the IPP65R110CFDXKSA2 is the manufacturer-recommended successor from Infineon Technologies. Both devices share identical electrical characteristics (31.2A continuous drain current, 110mOhm on-resistance, 118nC gate charge) and TO-220-3 packaging. The primary difference is reduced Vdss rating (650V versus 700V). This substitute is suitable for applications where the 700V rating is not a hard requirement. The IPP65R110CFDXKSA2 is Active status and ROHS3 compliant, ensuring long-term availability and regulatory compliance.

Alternative Substitutes for Current Design Adoption:

STP34N65M5 (STMicroelectronics): Active status device with 650V Vdss, 28A continuous drain current, and 110mOhm on-resistance at 14A. Provides comparable performance with lower gate charge (62.5nC) and reduced input capacitance (2700pF), resulting in faster switching characteristics. Suitable for applications tolerating slightly reduced current rating.

FCP110N65F (onsemi): 650V rated device with 35A continuous drain current and 110mOhm on-resistance. Offers higher current capability and power dissipation (357W) at the cost of increased gate charge (145nC) and input capacitance (4895pF). Classified as Not For New Designs but available for legacy system support.

STP33N60M2 (STMicroelectronics): 600V rated device with 26A continuous drain current and 125mOhm on-resistance. Active status with reduced gate charge (45.5nC) and minimal input capacitance (1781pF). Suitable for applications with lower voltage requirements and where switching speed optimization is prioritized.

Voltage Derating Consideration: Substitutes rated at 650V or 600V are acceptable only when circuit design margins accommodate the reduced voltage rating. Applications operating near 700V must retain the original IPP65R110CFDXKSA1 or equivalent 700V-rated devices.

Frequently Asked Questions (FAQ)

Q1: Can I directly replace IPP65R110CFDXKSA1 with IPP65R110CFDXKSA2?

A: Yes, for applications where 650V drain-to-source voltage is sufficient. Both devices are electrically identical in current rating (31.2A), on-resistance (110mOhm), and gate charge (118nC). The IPP65R110CFDXKSA2 is the active production equivalent and is recommended for new designs and legacy system support.

Q2: What is the impact of using a 650V-rated device in a 700V application?

A: Reduced voltage margin reduces safety factor and may cause device failure if transient overvoltages exceed 650V. Use 650V substitutes only when circuit design confirms maximum operating voltage remains below 650V with adequate margin for transients and manufacturing tolerances.

Q3: Why do some substitutes have lower current ratings (22A, 24A) than the original 31.2A?

A: Lower current-rated devices (STP30N65M5, STP31N65M5, STP32N65M5) are functional alternatives suitable only for applications with reduced current requirements. These are not direct replacements for 31.2A continuous operation.

Q4: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the device. Lower gate charge (45nC in STP33N60M2) enables faster switching and reduced gate drive power. Higher gate charge (145nC in FCP110N65F) requires more robust gate drive circuitry but may provide improved noise immunity.

Q5: Are all substitute parts RoHS3 compliant?

A: Yes, all listed substitute parts are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Q6: What is the difference between Active, Obsolete, and Not For New Designs status?

A: Active parts are in current production with guaranteed long-term availability. Obsolete parts are no longer manufactured; existing inventory only. Not For New Designs parts are available but manufacturers recommend against use in new applications. For new designs, prioritize Active status parts (IPP65R110CFDXKSA2, STP34N65M5, STP33N60M2, STP33N60DM2).

Q7: Can I use STP34N65M5 as a direct replacement despite lower current rating (28A vs 31.2A)?

A: Only if application current requirements do not exceed 28A continuous at 25°C. Verify actual circuit current draw before substitution. STP34N65M5 offers advantages in switching speed (lower gate charge) but reduced current headroom.

Q8: Which substitute offers the best thermal performance?

A: FCP110N65F provides the highest power dissipation rating (357W) and highest current capability (35A), offering superior thermal margin. However, it is classified Not For New Designs. For active production parts, STP34N65M5 (190W) and STP33N60M2 (190W) provide adequate thermal performance for most applications.

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