IPP45N06S3L-13 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IPP45N06S3L-13 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage and 45A continuous drain current in a TO-220-3 through-hole package. This device belongs to the OptiMOS™ series and is classified as obsolete. Due to its obsolete status, identifying equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for production and maintenance applications.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	55	V
Current - Continuous Drain (Id) @ 25°C	45	A
Rds On (Max) @ Id, Vgs	13.4 mOhm @ 26A, 10V	—
Vgs(th) (Max) @ Id	2.2V @ 30µA	—
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10V	—
Vgs (Max)	±16	V
Input Capacitance (Ciss) (Max) @ Vds	3600 pF @ 25V	—
Power Dissipation (Max)	65	W
Operating Temperature	-55 to 175	°C
Package / Case	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IPP45N06S3L-13 is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain-to-Source Voltage (Vdss) must equal or exceed 55V
N-Channel FET topology
Operating temperature range must encompass -55°C to 175°C
Package type must be TO-220-3 through-hole configuration

Performance Considerations:

Continuous drain current (Id) at 25°C must meet or exceed application requirements
On-resistance (Rds On) characteristics must be compatible with circuit design
Gate charge and input capacitance affect switching performance and driver requirements

The HUF75339P3 from onsemi qualifies as a substitute based on matching electrical class (55V N-Channel MOSFET), identical package type (TO-220-3), and compatible operating temperature range. The substitute exhibits enhanced performance specifications while maintaining backward compatibility with the original part's electrical interface requirements.

Parameter Comparison

Parameter	IPP45N06S3L-13 (Infineon)	HUF75339P3 (onsemi)	Unit
FET Type	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	55	55	V
Current - Continuous Drain (Id) @ 25°C	45	75	A
Rds On (Max) @ Vgs 10V	13.4 mOhm @ 26A	12 mOhm @ 75A	—
Vgs(th) (Max) @ Id	2.2V @ 30µA	4V @ 250µA	—
Gate Charge (Qg) (Max)	75 nC @ 10V	130 nC @ 20V	—
Vgs (Max)	±16	±20	V
Input Capacitance (Ciss) (Max) @ Vds	3600 pF @ 25V	2000 pF @ 25V	—
Power Dissipation (Max)	65	200	W
Operating Temperature	-55 to 175	-55 to 175	°C
Package / Case	TO-220-3	TO-220-3	—
Mounting Type	Through Hole	Through Hole	—

Engineering Selection Recommendations

Product Status Consideration: The IPP45N06S3L-13 is classified as obsolete. The HUF75339P3 is classified as active, ensuring long-term availability and continued manufacturing support.

Compliance and Certifications: Both parts are REACH Unaffected and classified under ECCN EAR99. The HUF75339P3 carries RoHS3 compliance certification, whereas the IPP45N06S3L-13 does not specify RoHS status. For applications requiring RoHS compliance, the HUF75339P3 is the appropriate selection.

Electrical Interface Compatibility: Both devices operate within the same voltage class (55V) and share identical TO-220-3 package pinouts, ensuring direct mechanical and electrical compatibility in existing PCB layouts and socket configurations.

Performance Enhancement: The HUF75339P3 provides increased continuous drain current (75A versus 45A) and higher power dissipation capability (200W versus 65W), allowing for improved thermal performance and higher current handling in applications where the original part was thermally or current-limited.

Frequently Asked Questions (FAQ)

Q: Can the HUF75339P3 be used as a direct replacement for the IPP45N06S3L-13 in existing designs?

A: Yes. Both devices are N-Channel MOSFETs with 55V Vdss rating in TO-220-3 packages. The pinout and electrical interface are compatible. The HUF75339P3 provides higher current and power ratings, making it suitable for the same applications and higher-performance variants.

Q: What are the key differences between these two parts?

A: The HUF75339P3 offers higher continuous drain current (75A versus 45A), lower on-resistance at rated current (12 mOhm versus 13.4 mOhm), higher power dissipation (200W versus 65W), and higher gate charge (130 nC versus 75 nC). The HUF75339P3 also has RoHS3 compliance and active product status.

Q: Will the higher gate charge of the HUF75339P3 affect my gate driver circuit?

A: Gate charge differences may require evaluation of gate driver current capability and switching frequency performance. The HUF75339P3 requires 130 nC at 20V compared to 75 nC at 10V for the original part. Verify that the gate driver can supply sufficient current for the intended switching frequency.

Q: Are there any thermal considerations when substituting these parts?

A: The HUF75339P3 has significantly higher power dissipation capability (200W versus 65W). This allows for better thermal performance in the same TO-220-3 package. Existing thermal management solutions designed for the IPP45N06S3L-13 will remain adequate for the HUF75339P3.

Q: Is the HUF75339P3 available in the same packaging format?

A: Yes. Both parts use TO-220-3 through-hole packages. The HUF75339P3 is supplied in tube packaging, whereas the IPP45N06S3L-13 packaging format is not specified in the provided data.

Q: What is the impact of the lower input capacitance in the HUF75339P3?

A: The HUF75339P3 has lower input capacitance (2000 pF versus 3600 pF at 25V). This reduces gate charge requirements and may improve switching speed, resulting in lower switching losses and reduced gate driver stress.

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