IPP080N03L G Equivalent & Substitute Parts

Part Overview

The IPP080N03L G is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 50A continuous drain current at 25°C. This device features a TO-220-3 through-hole package and is part of the OptiMOS™ series. The part is classified as Obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement planning. Substitute parts must maintain compatibility across voltage ratings, current handling, package type, and thermal characteristics to ensure direct replacement capability in existing applications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	50	A (Tc)
Rds On (Max) @ 30A, 10V	8	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.2	V
Gate Charge (Qg) @ 10V	18	nC
Power Dissipation (Max)	47	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the IPP080N03L G is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Package Type: Must be TO-220-3 through-hole configuration
FET Type: N-Channel MOSFET technology
Operating Temperature Range: Must support -55°C to 175°C
Gate Voltage Rating (Vgs Max): Must accommodate ±20V or greater

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Substitute parts rated at 50A or higher maintain functional equivalence
Rds On characteristics: Lower on-resistance values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Higher ratings provide thermal margin

The three substitute parts identified (IRL3803PBF, PSMN2R0-30PL,127, and PSMN4R3-30PL,127) all meet the primary substitution criteria. Each maintains the 30V Vdss rating, TO-220-3 package configuration, and N-Channel MOSFET technology. All operate within the -55°C to 175°C temperature range and support the required gate voltage specifications.

Parameter Comparison

Parameter	IPP080N03L G	IRL3803PBF	PSMN2R0-30PL,127	PSMN4R3-30PL,127	Unit
Manufacturer	Infineon Technologies	Infineon Technologies	Nexperia USA Inc.	Nexperia USA Inc.	—
Drain to Source Voltage (Vdss)	30	30	30	30	V
Continuous Drain Current (Id) @ 25°C	50	140	100	100	A (Tc)
Rds On (Max) @ 10V	8 @ 30A	6 @ 71A	2.1 @ 15A	4.3 @ 15A	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.2	1	2.15	2.15	V
Gate Charge (Qg) @ 10V	18	140 @ 4.5V	117	41.5	nC
Power Dissipation (Max)	47	200	211	103	W (Tc)
Operating Temperature Range	-55 to 175	-55 to 175	-55 to 175	-55 to 175	°C (TJ)
Package Type	TO-220-3	TO-220AB	TO-220AB	TO-220AB	—
Vgs (Max)	±20	±16	±20	±20	V
Product Status	Obsolete	Not For New Designs	Obsolete	Obsolete	—

Engineering Selection Recommendations

IRL3803PBF (Infineon Technologies)

This part is manufactured by the same supplier as the primary component and maintains full electrical compatibility at the 30V rating. The IRL3803PBF provides significantly higher current capacity (140A vs. 50A) and power dissipation (200W vs. 47W), offering substantial thermal and current margin. However, the part is classified as "Not For New Designs," indicating limited long-term availability. The gate threshold voltage is lower (1V vs. 2.2V), which may affect gate drive circuit timing. The maximum gate voltage rating is ±16V, which is lower than the original ±20V specification. This part is suitable for direct replacement in existing designs where the higher current and power ratings provide operational benefits.

PSMN2R0-30PL,127 (Nexperia USA Inc.)

This Nexperia part meets all primary substitution criteria with 30V Vdss and TO-220-3 package compatibility. The PSMN2R0-30PL,127 delivers superior on-resistance performance (2.1 mOhm vs. 8 mOhm) and higher power dissipation capability (211W vs. 47W). Gate voltage rating matches the original specification at ±20V. The part is classified as Obsolete, consistent with the primary component status. Higher gate charge (117 nC vs. 18 nC) may require gate drive circuit evaluation. This part is suitable for applications requiring improved efficiency due to lower on-resistance characteristics.

PSMN4R3-30PL,127 (Nexperia USA Inc.)

This Nexperia part provides the closest electrical profile to the IPP080N03L G among the three substitutes. The PSMN4R3-30PL,127 maintains 30V Vdss, TO-220-3 package type, and ±20V gate voltage rating. On-resistance (4.3 mOhm vs. 8 mOhm) is lower than the original, providing improved efficiency. Gate charge (41.5 nC vs. 18 nC) is significantly higher, requiring gate drive circuit assessment. Power dissipation (103W vs. 47W) provides thermal margin. The part is classified as Obsolete. This part offers balanced performance characteristics suitable for direct substitution with minimal circuit redesign.

All three substitute parts are REACH Unaffected and carry EAR99 ECCN classification, matching the regulatory status of the primary component.

Frequently Asked Questions (FAQ)

Q: Can the IRL3803PBF be used as a direct replacement for the IPP080N03L G?

A: The IRL3803PBF meets the primary substitution criteria of 30V Vdss, N-Channel MOSFET technology, and TO-220-3 package configuration. However, the gate threshold voltage is lower (1V vs. 2.2V), and the maximum gate voltage rating is ±16V instead of ±20V. Gate drive circuits must be evaluated to ensure compatibility with these differences. The higher current and power ratings provide operational margin.

Q: What is the difference between TO-220-3 and TO-220AB packages?

A: Both designations refer to the same three-lead through-hole package format used for power MOSFETs. The TO-220AB designation is an alternative naming convention. All substitute parts are mechanically compatible with the original TO-220-3 footprint.

Q: Why do the substitute parts have higher gate charge values?

A: Gate charge (Qg) represents the total charge required to switch the MOSFET from off to on state. Higher values indicate larger die sizes or different internal structures. The PSMN2R0-30PL,127 (117 nC) and IRL3803PBF (140 nC) have significantly higher gate charge than the original (18 nC). Gate drive circuits must supply sufficient current to charge the gate within the required switching time. Evaluation of gate driver capability is necessary before substitution.

Q: Are all substitute parts suitable for new designs?

A: No. The IRL3803PBF is classified as "Not For New Designs," indicating limited future availability. The PSMN2R0-30PL,127 and PSMN4R3-30PL,127 are both classified as Obsolete. For new designs, consultation with component suppliers is recommended to identify currently available alternatives with similar electrical specifications.

Q: What is the impact of lower on-resistance in the substitute parts?

A: Lower on-resistance (Rds On) reduces power dissipation during conduction, improving efficiency and reducing thermal load. The PSMN2R0-30PL,127 (2.1 mOhm) and PSMN4R3-30PL,127 (4.3 mOhm) both provide lower on-resistance than the original (8 mOhm). This results in lower heat generation and may allow for reduced heatsink requirements in thermal-limited applications.

Q: Can these parts be used interchangeably in the same circuit?

A: All three substitute parts maintain the 30V Vdss rating and TO-220-3 package, enabling mechanical and electrical interchangeability at the component level. However, differences in gate charge, threshold voltage, and power dissipation require circuit-level evaluation. Gate drive circuits must be verified to supply adequate current for the higher gate charge values. Thermal design must account for the different power dissipation characteristics.

Q: What compliance certifications do these parts carry?

A: All parts (primary and substitutes) are REACH Unaffected and classified as EAR99 under ECCN regulations. The PSMN2R0-30PL,127 and PSMN4R3-30PL,127 are RoHS3 Compliant. All parts carry Moisture Sensitivity Level 1 (Unlimited), indicating no moisture sensitivity restrictions.

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