IPL65R460CFDAUMA1 Equivalent & Substitute Parts

Part Overview

The IPL65R460CFDAUMA1 is an N-Channel 650V MOSFET manufactured by Infineon Technologies, part of the CoolMOS™ series. This device is rated for 8.3A continuous drain current and features a maximum on-resistance of 460mOhm at specified conditions. The component is housed in a PG-VSON-4 surface mount package.

This part carries an Obsolete product status. Identifying equivalent and substitute components is necessary to maintain design continuity, ensure supply chain reliability, and support ongoing production requirements for applications utilizing this MOSFET topology.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	8.3	A (Tc)
On-Resistance (Rds On Max) @ Id, Vgs	460 @ 3.4A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4.5 @ 300µA	V
Gate Charge (Qg Max) @ Vgs	31.5 @ 10V	nC
Input Capacitance (Ciss Max) @ Vds	870 @ 100V	pF
Power Dissipation (Max)	83.3	W (Tc)
Operating Temperature Range	-40 to 150	°C (TJ)
Package Type	PG-VSON-4	Surface Mount
Series	CoolMOS™

Substitute Part Grouping Explanation

Substitution of the IPL65R460CFDAUMA1 is evaluated based on the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The main part operates at 650V Vdss. Substitute components must maintain voltage ratings sufficient for the application circuit. The identified substitute operates at 600V, representing a 50V reduction in maximum voltage specification.

Current Handling Capacity: The main part is rated for 8.3A continuous drain current. The substitute part is rated for 14A, providing increased current capacity.

On-Resistance Characteristics: The main part specifies 460mOhm maximum on-resistance. The substitute specifies 170mOhm, indicating lower conduction losses and improved efficiency characteristics.

Gate Charge and Switching Performance: Gate charge values (31.5nC vs. 28nC) and input capacitance specifications determine switching speed and driver requirements. These parameters remain within comparable ranges.

Thermal and Power Dissipation: Maximum power dissipation ratings (83.3W vs. 76W) and operating temperature ranges (-40 to 150°C vs. -55 to 150°C) define thermal management requirements.

Package and Mounting: The main part uses PG-VSON-4 surface mount packaging. The substitute uses PG-TO252-3 (TO-252-3, DPAK) surface mount packaging, representing a different physical form factor.

Parameter Comparison

Parameter	IPL65R460CFDAUMA1	IPD60R170CFD7ATMA1	Unit
Manufacturer	Infineon Technologies	Infineon Technologies
Category	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs
Series	CoolMOS™	CoolMOS™ CFD7
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650	600	V
Continuous Drain Current (Id) @ 25°C	8.3	14	A (Tc)
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	460 @ 3.4A, 10V	170 @ 6A, 10V	mOhm
Vgs(th) (Max) @ Id	4.5 @ 300µA	4.5 @ 300µA	V
Gate Charge (Qg Max) @ Vgs	31.5 @ 10V	28 @ 10V	nC
Vgs (Max)	±20	±20	V
Input Capacitance (Ciss Max) @ Vds	870 @ 100V	1199 @ 400V	pF
Power Dissipation (Max)	83.3	76	W (Tc)
Operating Temperature Range	-40 to 150	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Package Type	PG-VSON-4	PG-TO252-3
Product Status	Obsolete	Active
REACH Status	REACH Unaffected	REACH Unaffected
ECCN	EAR99	EAR99

Engineering Selection Recommendations

Product Status Consideration: The IPL65R460CFDAUMA1 carries Obsolete status with 996 units currently in stock. The substitute part IPD60R170CFD7ATMA1 carries Active status with 851 units in stock, providing long-term supply chain continuity and ongoing manufacturer support.

Compliance and Certification: Both parts maintain REACH Unaffected status and EAR99 ECCN classification. The substitute part carries RoHS3 Compliant certification, whereas the main part does not specify RoHS compliance. The substitute part carries Moisture Sensitivity Level 1 (Unlimited), compared to the main part's MSL 2A (4 Weeks), indicating improved handling flexibility.

Electrical Parameter Trade-offs: Selection between these parts depends on application voltage and current requirements. The main part provides 650V rating; the substitute provides 600V. The substitute offers superior on-resistance (170mOhm vs. 460mOhm) and higher current capacity (14A vs. 8.3A), resulting in lower conduction losses and improved thermal performance.

Package Compatibility: The change from PG-VSON-4 to PG-TO252-3 packaging requires PCB layout modification. The TO-252-3 package provides enhanced thermal dissipation through its tab connection compared to the VSON package.

Frequently Asked Questions (FAQ)

Q: Can IPD60R170CFD7ATMA1 directly replace IPL65R460CFDAUMA1 in existing designs?

A: Direct replacement requires evaluation of three factors: (1) PCB layout compatibility with the different package types (PG-VSON-4 vs. PG-TO252-3), (2) circuit voltage rating verification to confirm 600V operation is acceptable for the application, and (3) thermal management assessment, as the substitute's lower on-resistance and different package geometry alter heat dissipation characteristics.

Q: What is the significance of the 50V voltage rating difference?

A: The main part is rated for 650V maximum drain-source voltage; the substitute is rated for 600V. This 50V difference must be evaluated against the application's maximum operating voltage. If the circuit operates below 600V, the substitute is suitable. If the circuit requires 600V to 650V operation, the substitute is not appropriate.

Q: How do the on-resistance values affect circuit performance?

A: The substitute's 170mOhm on-resistance is significantly lower than the main part's 460mOhm. Lower on-resistance reduces conduction losses, decreases power dissipation, and improves overall circuit efficiency. This is particularly beneficial in high-frequency switching applications and high-current scenarios.

Q: What are the package-related considerations for substitution?

A: The main part uses PG-VSON-4, a compact surface mount package. The substitute uses PG-TO252-3 (TO-252-3, DPAK), a larger surface mount package with a tab for enhanced thermal connection. PCB footprint, trace routing, and thermal via placement must be redesigned to accommodate the different package geometry.

Q: Are there differences in gate drive requirements?

A: Both parts specify identical gate threshold voltage (4.5V @ 300µA) and maximum gate voltage (±20V). Gate charge values are comparable (31.5nC vs. 28nC), indicating similar gate driver requirements. The substitute's slightly lower gate charge may provide marginally faster switching transitions.

Q: What is the impact of the different moisture sensitivity levels?

A: The main part carries MSL 2A (4 Weeks), requiring controlled storage and handling within 4 weeks of package opening. The substitute carries MSL 1 (Unlimited), eliminating moisture sensitivity constraints and reducing storage and handling complexity.

Q: Why is the substitute part listed as Active status while the main part is Obsolete?

A: Active status indicates the substitute part is in current production with ongoing manufacturer support, design updates, and long-term availability. Obsolete status indicates the main part is no longer manufactured, with supply limited to existing inventory. Transitioning to the Active substitute part ensures future design support and supply chain reliability.

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